Superconductivity in the narrow-gap semiconductor CsBi4Te 6

Christos D. Malliakas, Duck Young Chung, Helmut Claus, Mercouri G Kanatzidis

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

Superconductivity was discovered in the narrow-gap semiconductor CsBi 4Te6. A superconducting transition around 4.4 K was observed for p-type samples in temperature-dependent resistivity and magnetic susceptibility data. Stoichiometric CsBi4Te6 is not a superconductor. A remarkably high critical field of ∼10 T was estimated from the field-dependent resistivity data. The strongly anisotropic CsBi 4Te6 system is monoclinic and the first member of a larger homologous series Cs4[Bi2n+4Te3n+6] that exhibits unconventional superconductivity, suggesting that proper doping of the homologous series may create a novel class of superconductors from semiconductors.

Original languageEnglish
Pages (from-to)14540-14543
Number of pages4
JournalJournal of the American Chemical Society
Volume135
Issue number39
DOIs
Publication statusPublished - Oct 2 2013

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Semiconductors
Superconductivity
Superconducting materials
Semiconductor materials
Magnetic susceptibility
Doping (additives)
Temperature

ASJC Scopus subject areas

  • Chemistry(all)
  • Catalysis
  • Biochemistry
  • Colloid and Surface Chemistry

Cite this

Superconductivity in the narrow-gap semiconductor CsBi4Te 6. / Malliakas, Christos D.; Chung, Duck Young; Claus, Helmut; Kanatzidis, Mercouri G.

In: Journal of the American Chemical Society, Vol. 135, No. 39, 02.10.2013, p. 14540-14543.

Research output: Contribution to journalArticle

Malliakas, Christos D. ; Chung, Duck Young ; Claus, Helmut ; Kanatzidis, Mercouri G. / Superconductivity in the narrow-gap semiconductor CsBi4Te 6. In: Journal of the American Chemical Society. 2013 ; Vol. 135, No. 39. pp. 14540-14543.
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