Suppressing Ambient Degradation of Exfoliated InSe Nanosheet Devices via Seeded Atomic Layer Deposition Encapsulation

Spencer A. Wells, Alex Henning, J. Tyler Gish, Vinod K. Sangwan, Lincoln J. Lauhon, Mark C Hersam

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

With exceptional charge carrier mobilities and a direct bandgap at most thicknesses, indium selenide (InSe) is an emerging layered semiconductor that has generated significant interest for electronic and optoelectronic applications. However, exfoliated InSe nanosheets are susceptible to rapid degradation in ambient conditions, thus limiting their technological potential. In addition to morphological changes upon ambient exposure, the mobilities and current modulation on/off ratios of InSe transistors, as well as the responsivities of InSe photodetectors, decrease by over 3 orders of magnitude within 12 h of ambient exposure. In an effort to mitigate these deleterious effects, here we present an encapsulation scheme based on seeded atomic layer deposition that provides pinhole-free growth of alumina without compromising the intrinsic electronic properties of the underlying InSe. In particular, this encapsulation provides reproducible InSe field-effect transistor characteristics and InSe photodetector responsivities in excess of 107 A/W following ambient exposure for time periods on the order of months. Because atomic layer deposition is a highly scalable and manufacturable process, this work will accelerate ongoing efforts to integrate InSe nanosheets into electronic and optoelectronic technologies.

Original languageEnglish
Pages (from-to)7876-7882
Number of pages7
JournalNano Letters
Volume18
Issue number12
DOIs
Publication statusPublished - Dec 12 2018

Fingerprint

indium selenides
Indium
Atomic layer deposition
Nanosheets
atomic layer epitaxy
Encapsulation
degradation
Degradation
Photodetectors
Optoelectronic devices
photometers
electronics
Aluminum Oxide
Carrier mobility
pinholes
Field effect transistors
carrier mobility
Charge carriers
Electronic properties
charge carriers

Keywords

  • electronics
  • indium selenide
  • optoelectronics
  • passivation
  • photodetector
  • semiconductor
  • transistor
  • Two-dimensional

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

Suppressing Ambient Degradation of Exfoliated InSe Nanosheet Devices via Seeded Atomic Layer Deposition Encapsulation. / Wells, Spencer A.; Henning, Alex; Gish, J. Tyler; Sangwan, Vinod K.; Lauhon, Lincoln J.; Hersam, Mark C.

In: Nano Letters, Vol. 18, No. 12, 12.12.2018, p. 7876-7882.

Research output: Contribution to journalArticle

Wells, Spencer A. ; Henning, Alex ; Gish, J. Tyler ; Sangwan, Vinod K. ; Lauhon, Lincoln J. ; Hersam, Mark C. / Suppressing Ambient Degradation of Exfoliated InSe Nanosheet Devices via Seeded Atomic Layer Deposition Encapsulation. In: Nano Letters. 2018 ; Vol. 18, No. 12. pp. 7876-7882.
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