Abstract
With exceptional charge carrier mobilities and a direct bandgap at most thicknesses, indium selenide (InSe) is an emerging layered semiconductor that has generated significant interest for electronic and optoelectronic applications. However, exfoliated InSe nanosheets are susceptible to rapid degradation in ambient conditions, thus limiting their technological potential. In addition to morphological changes upon ambient exposure, the mobilities and current modulation on/off ratios of InSe transistors, as well as the responsivities of InSe photodetectors, decrease by over 3 orders of magnitude within 12 h of ambient exposure. In an effort to mitigate these deleterious effects, here we present an encapsulation scheme based on seeded atomic layer deposition that provides pinhole-free growth of alumina without compromising the intrinsic electronic properties of the underlying InSe. In particular, this encapsulation provides reproducible InSe field-effect transistor characteristics and InSe photodetector responsivities in excess of 107 A/W following ambient exposure for time periods on the order of months. Because atomic layer deposition is a highly scalable and manufacturable process, this work will accelerate ongoing efforts to integrate InSe nanosheets into electronic and optoelectronic technologies.
| Original language | English |
|---|---|
| Pages (from-to) | 7876-7882 |
| Number of pages | 7 |
| Journal | Nano Letters |
| Volume | 18 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - Dec 12 2018 |
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Keywords
- electronics
- indium selenide
- optoelectronics
- passivation
- photodetector
- semiconductor
- transistor
- Two-dimensional
ASJC Scopus subject areas
- Bioengineering
- Chemistry(all)
- Materials Science(all)
- Condensed Matter Physics
- Mechanical Engineering
Cite this
Suppressing Ambient Degradation of Exfoliated InSe Nanosheet Devices via Seeded Atomic Layer Deposition Encapsulation. / Wells, Spencer A.; Henning, Alex; Gish, J. Tyler; Sangwan, Vinod K.; Lauhon, Lincoln J.; Hersam, Mark C.
In: Nano Letters, Vol. 18, No. 12, 12.12.2018, p. 7876-7882.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Suppressing Ambient Degradation of Exfoliated InSe Nanosheet Devices via Seeded Atomic Layer Deposition Encapsulation
AU - Wells, Spencer A.
AU - Henning, Alex
AU - Gish, J. Tyler
AU - Sangwan, Vinod K.
AU - Lauhon, Lincoln J.
AU - Hersam, Mark C
PY - 2018/12/12
Y1 - 2018/12/12
N2 - With exceptional charge carrier mobilities and a direct bandgap at most thicknesses, indium selenide (InSe) is an emerging layered semiconductor that has generated significant interest for electronic and optoelectronic applications. However, exfoliated InSe nanosheets are susceptible to rapid degradation in ambient conditions, thus limiting their technological potential. In addition to morphological changes upon ambient exposure, the mobilities and current modulation on/off ratios of InSe transistors, as well as the responsivities of InSe photodetectors, decrease by over 3 orders of magnitude within 12 h of ambient exposure. In an effort to mitigate these deleterious effects, here we present an encapsulation scheme based on seeded atomic layer deposition that provides pinhole-free growth of alumina without compromising the intrinsic electronic properties of the underlying InSe. In particular, this encapsulation provides reproducible InSe field-effect transistor characteristics and InSe photodetector responsivities in excess of 107 A/W following ambient exposure for time periods on the order of months. Because atomic layer deposition is a highly scalable and manufacturable process, this work will accelerate ongoing efforts to integrate InSe nanosheets into electronic and optoelectronic technologies.
AB - With exceptional charge carrier mobilities and a direct bandgap at most thicknesses, indium selenide (InSe) is an emerging layered semiconductor that has generated significant interest for electronic and optoelectronic applications. However, exfoliated InSe nanosheets are susceptible to rapid degradation in ambient conditions, thus limiting their technological potential. In addition to morphological changes upon ambient exposure, the mobilities and current modulation on/off ratios of InSe transistors, as well as the responsivities of InSe photodetectors, decrease by over 3 orders of magnitude within 12 h of ambient exposure. In an effort to mitigate these deleterious effects, here we present an encapsulation scheme based on seeded atomic layer deposition that provides pinhole-free growth of alumina without compromising the intrinsic electronic properties of the underlying InSe. In particular, this encapsulation provides reproducible InSe field-effect transistor characteristics and InSe photodetector responsivities in excess of 107 A/W following ambient exposure for time periods on the order of months. Because atomic layer deposition is a highly scalable and manufacturable process, this work will accelerate ongoing efforts to integrate InSe nanosheets into electronic and optoelectronic technologies.
KW - electronics
KW - indium selenide
KW - optoelectronics
KW - passivation
KW - photodetector
KW - semiconductor
KW - transistor
KW - Two-dimensional
UR - http://www.scopus.com/inward/record.url?scp=85058282565&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85058282565&partnerID=8YFLogxK
U2 - 10.1021/acs.nanolett.8b03689
DO - 10.1021/acs.nanolett.8b03689
M3 - Article
C2 - 30418785
AN - SCOPUS:85058282565
VL - 18
SP - 7876
EP - 7882
JO - Nano Letters
JF - Nano Letters
SN - 1530-6984
IS - 12
ER -