Abstract
The flatband voltage stability of Si O2 SiC metal-oxide-semiconductor capacitors upon electron injection can be enhanced by the introduction of nitrogen in a thermal gate oxide. We show that it is due to the suppression of negative charge buildup in interface states during injection. We discuss the role of nitrogen in this effect and how it might be linked to the passivation of interface defects.
| Original language | English |
|---|---|
| Article number | 153503 |
| Journal | Applied Physics Letters |
| Volume | 91 |
| Issue number | 15 |
| DOIs | |
| Publication status | Published - Oct 19 2007 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Rozen, J., Dhar, S., Pantelides, S. T., Feldman, L. C., Wang, S., Williams, J. R., & Afanas'Ev, V. V. (2007). Suppression of interface state generation upon electron injection in nitrided oxides grown on 4H-SiC. Applied Physics Letters, 91(15), [153503]. https://doi.org/10.1063/1.2790374