Suppression of interface state generation upon electron injection in nitrided oxides grown on 4H-SiC

John Rozen; Sarit Dhar; S. T. Pantelides; L. C. Feldman; Sanwu Wang; J. R. Williams; V. V. Afanas'Ev

doi:10.1063/1.2790374

Suppression of interface state generation upon electron injection in nitrided oxides grown on 4H-SiC

John Rozen, Sarit Dhar, S. T. Pantelides, L. C. Feldman, Sanwu Wang, J. R. Williams, V. V. Afanas'Ev

Rutgers University

Research output: Contribution to journal › Article

27 Citations (Scopus)

Abstract

The flatband voltage stability of Si O2 SiC metal-oxide-semiconductor capacitors upon electron injection can be enhanced by the introduction of nitrogen in a thermal gate oxide. We show that it is due to the suppression of negative charge buildup in interface states during injection. We discuss the role of nitrogen in this effect and how it might be linked to the passivation of interface defects.

Original language	English
Article number	153503
Journal	Applied Physics Letters
Volume	91
Issue number	15
DOIs	https://doi.org/10.1063/1.2790374
Publication status	Published - Oct 19 2007

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ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Cite this

Rozen, J., Dhar, S., Pantelides, S. T., Feldman, L. C., Wang, S., Williams, J. R., & Afanas'Ev, V. V. (2007). Suppression of interface state generation upon electron injection in nitrided oxides grown on 4H-SiC. Applied Physics Letters, 91(15), [153503]. https://doi.org/10.1063/1.2790374

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10.1063/1.2790374