Suppression of interface state generation upon electron injection in nitrided oxides grown on 4H-SiC

John Rozen; Sarit Dhar; S. T. Pantelides; L. C. Feldman; Sanwu Wang; J. R. Williams; V. V. Afanas'Ev

doi:10.1063/1.2790374

Suppression of interface state generation upon electron injection in nitrided oxides grown on 4H-SiC

John Rozen, Sarit Dhar, S. T. Pantelides, L. C. Feldman, Sanwu Wang, J. R. Williams, V. V. Afanas'Ev

Rutgers University

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

The flatband voltage stability of Si O2 SiC metal-oxide-semiconductor capacitors upon electron injection can be enhanced by the introduction of nitrogen in a thermal gate oxide. We show that it is due to the suppression of negative charge buildup in interface states during injection. We discuss the role of nitrogen in this effect and how it might be linked to the passivation of interface defects.

Original language	English
Article number	153503
Journal	Applied Physics Letters
Volume	91
Issue number	15
DOIs	https://doi.org/10.1063/1.2790374
Publication status	Published - 2007

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Suppression of interface state generation upon electron injection in nitrided oxides grown on 4H-SiC",

abstract = "The flatband voltage stability of Si O2 SiC metal-oxide-semiconductor capacitors upon electron injection can be enhanced by the introduction of nitrogen in a thermal gate oxide. We show that it is due to the suppression of negative charge buildup in interface states during injection. We discuss the role of nitrogen in this effect and how it might be linked to the passivation of interface defects.",

author = "John Rozen and Sarit Dhar and Pantelides, {S. T.} and Feldman, {L. C.} and Sanwu Wang and Williams, {J. R.} and Afanas'Ev, {V. V.}",

note = "Funding Information: D. M. Fleetwood is acknowledged for many fruitful discussions. This work was supported by DARPA/ONR under Contract No. N00014-02-1-0628. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

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AU - Rozen, John

AU - Dhar, Sarit

AU - Pantelides, S. T.

AU - Feldman, L. C.

AU - Wang, Sanwu

AU - Williams, J. R.

AU - Afanas'Ev, V. V.

N1 - Funding Information: D. M. Fleetwood is acknowledged for many fruitful discussions. This work was supported by DARPA/ONR under Contract No. N00014-02-1-0628. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2007

Y1 - 2007

N2 - The flatband voltage stability of Si O2 SiC metal-oxide-semiconductor capacitors upon electron injection can be enhanced by the introduction of nitrogen in a thermal gate oxide. We show that it is due to the suppression of negative charge buildup in interface states during injection. We discuss the role of nitrogen in this effect and how it might be linked to the passivation of interface defects.

AB - The flatband voltage stability of Si O2 SiC metal-oxide-semiconductor capacitors upon electron injection can be enhanced by the introduction of nitrogen in a thermal gate oxide. We show that it is due to the suppression of negative charge buildup in interface states during injection. We discuss the role of nitrogen in this effect and how it might be linked to the passivation of interface defects.

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Suppression of interface state generation upon electron injection in nitrided oxides grown on 4H-SiC

Abstract

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