Suppression of interface state generation upon electron injection in nitrided oxides grown on 4H-SiC

John Rozen, Sarit Dhar, S. T. Pantelides, Leonard C Feldman, Sanwu Wang, J. R. Williams, V. V. Afanas'Ev

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

The flatband voltage stability of Si O2 SiC metal-oxide-semiconductor capacitors upon electron injection can be enhanced by the introduction of nitrogen in a thermal gate oxide. We show that it is due to the suppression of negative charge buildup in interface states during injection. We discuss the role of nitrogen in this effect and how it might be linked to the passivation of interface defects.

Original languageEnglish
Article number153503
JournalApplied Physics Letters
Volume91
Issue number15
DOIs
Publication statusPublished - 2007

Fingerprint

retarding
injection
nitrogen
oxides
metal oxide semiconductors
passivity
capacitors
electrons
defects
electric potential

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Rozen, J., Dhar, S., Pantelides, S. T., Feldman, L. C., Wang, S., Williams, J. R., & Afanas'Ev, V. V. (2007). Suppression of interface state generation upon electron injection in nitrided oxides grown on 4H-SiC. Applied Physics Letters, 91(15), [153503]. https://doi.org/10.1063/1.2790374

Suppression of interface state generation upon electron injection in nitrided oxides grown on 4H-SiC. / Rozen, John; Dhar, Sarit; Pantelides, S. T.; Feldman, Leonard C; Wang, Sanwu; Williams, J. R.; Afanas'Ev, V. V.

In: Applied Physics Letters, Vol. 91, No. 15, 153503, 2007.

Research output: Contribution to journalArticle

Rozen, John ; Dhar, Sarit ; Pantelides, S. T. ; Feldman, Leonard C ; Wang, Sanwu ; Williams, J. R. ; Afanas'Ev, V. V. / Suppression of interface state generation upon electron injection in nitrided oxides grown on 4H-SiC. In: Applied Physics Letters. 2007 ; Vol. 91, No. 15.
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