Suppression of penetration of aluminum into 8-hydroxyquinoline aluminum via a thin oxide barrier

M. B. Huang, K. McDonald, J. C. Keay, Y. Q. Wang, S. J. Rosenthal, R. A. Weller, Leonard C Feldman

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

We report a direct observation of Al penetration into an organic film of 8-hydroxyquinoline aluminum (Alq) in a Alq/Al bilayer, a common interface occurring in many organic light-emitting diode structures. The Al penetration has a strong correlation with Alq photoluminescence quenching. We also demonstrate that the penetration and luminescence quenching can be effectively suppressed by ∼20Å of an intervening layer of Al2O3 at the Alq/Al interface.

Original languageEnglish
Pages (from-to)2914-2916
Number of pages3
JournalApplied Physics Letters
Volume73
Issue number20
DOIs
Publication statusPublished - 1998

Fingerprint

penetration
retarding
aluminum
oxides
quenching
light emitting diodes
luminescence
photoluminescence

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Huang, M. B., McDonald, K., Keay, J. C., Wang, Y. Q., Rosenthal, S. J., Weller, R. A., & Feldman, L. C. (1998). Suppression of penetration of aluminum into 8-hydroxyquinoline aluminum via a thin oxide barrier. Applied Physics Letters, 73(20), 2914-2916. https://doi.org/10.1063/1.122628

Suppression of penetration of aluminum into 8-hydroxyquinoline aluminum via a thin oxide barrier. / Huang, M. B.; McDonald, K.; Keay, J. C.; Wang, Y. Q.; Rosenthal, S. J.; Weller, R. A.; Feldman, Leonard C.

In: Applied Physics Letters, Vol. 73, No. 20, 1998, p. 2914-2916.

Research output: Contribution to journalArticle

Huang, MB, McDonald, K, Keay, JC, Wang, YQ, Rosenthal, SJ, Weller, RA & Feldman, LC 1998, 'Suppression of penetration of aluminum into 8-hydroxyquinoline aluminum via a thin oxide barrier', Applied Physics Letters, vol. 73, no. 20, pp. 2914-2916. https://doi.org/10.1063/1.122628
Huang, M. B. ; McDonald, K. ; Keay, J. C. ; Wang, Y. Q. ; Rosenthal, S. J. ; Weller, R. A. ; Feldman, Leonard C. / Suppression of penetration of aluminum into 8-hydroxyquinoline aluminum via a thin oxide barrier. In: Applied Physics Letters. 1998 ; Vol. 73, No. 20. pp. 2914-2916.
@article{b70f411d98624eb0802453f988ce0298,
title = "Suppression of penetration of aluminum into 8-hydroxyquinoline aluminum via a thin oxide barrier",
abstract = "We report a direct observation of Al penetration into an organic film of 8-hydroxyquinoline aluminum (Alq) in a Alq/Al bilayer, a common interface occurring in many organic light-emitting diode structures. The Al penetration has a strong correlation with Alq photoluminescence quenching. We also demonstrate that the penetration and luminescence quenching can be effectively suppressed by ∼20{\AA} of an intervening layer of Al2O3 at the Alq/Al interface.",
author = "Huang, {M. B.} and K. McDonald and Keay, {J. C.} and Wang, {Y. Q.} and Rosenthal, {S. J.} and Weller, {R. A.} and Feldman, {Leonard C}",
year = "1998",
doi = "10.1063/1.122628",
language = "English",
volume = "73",
pages = "2914--2916",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "20",

}

TY - JOUR

T1 - Suppression of penetration of aluminum into 8-hydroxyquinoline aluminum via a thin oxide barrier

AU - Huang, M. B.

AU - McDonald, K.

AU - Keay, J. C.

AU - Wang, Y. Q.

AU - Rosenthal, S. J.

AU - Weller, R. A.

AU - Feldman, Leonard C

PY - 1998

Y1 - 1998

N2 - We report a direct observation of Al penetration into an organic film of 8-hydroxyquinoline aluminum (Alq) in a Alq/Al bilayer, a common interface occurring in many organic light-emitting diode structures. The Al penetration has a strong correlation with Alq photoluminescence quenching. We also demonstrate that the penetration and luminescence quenching can be effectively suppressed by ∼20Å of an intervening layer of Al2O3 at the Alq/Al interface.

AB - We report a direct observation of Al penetration into an organic film of 8-hydroxyquinoline aluminum (Alq) in a Alq/Al bilayer, a common interface occurring in many organic light-emitting diode structures. The Al penetration has a strong correlation with Alq photoluminescence quenching. We also demonstrate that the penetration and luminescence quenching can be effectively suppressed by ∼20Å of an intervening layer of Al2O3 at the Alq/Al interface.

UR - http://www.scopus.com/inward/record.url?scp=0001443340&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001443340&partnerID=8YFLogxK

U2 - 10.1063/1.122628

DO - 10.1063/1.122628

M3 - Article

VL - 73

SP - 2914

EP - 2916

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 20

ER -