Suppression of penetration of aluminum into 8-hydroxyquinoline aluminum via a thin oxide barrier

M. B. Huang, K. McDonald, J. C. Keay, Y. Q. Wang, S. J. Rosenthal, R. A. Weller, L. C. Feldman

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

We report a direct observation of Al penetration into an organic film of 8-hydroxyquinoline aluminum (Alq) in a Alq/Al bilayer, a common interface occurring in many organic light-emitting diode structures. The Al penetration has a strong correlation with Alq photoluminescence quenching. We also demonstrate that the penetration and luminescence quenching can be effectively suppressed by ∼20Å of an intervening layer of Al2O3 at the Alq/Al interface.

Original languageEnglish
Pages (from-to)2914-2916
Number of pages3
JournalApplied Physics Letters
Volume73
Issue number20
DOIs
Publication statusPublished - Dec 1 1998

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Suppression of penetration of aluminum into 8-hydroxyquinoline aluminum via a thin oxide barrier'. Together they form a unique fingerprint.

  • Cite this

    Huang, M. B., McDonald, K., Keay, J. C., Wang, Y. Q., Rosenthal, S. J., Weller, R. A., & Feldman, L. C. (1998). Suppression of penetration of aluminum into 8-hydroxyquinoline aluminum via a thin oxide barrier. Applied Physics Letters, 73(20), 2914-2916. https://doi.org/10.1063/1.122628