Surface and bulk diffusion of adsorbed nickel on ultrathin thermally grown silicon dioxide

J. T. Mayer, R. F. Lin, Eric Garfunkel

Research output: Contribution to journalArticle

48 Citations (Scopus)

Abstract

The surface diffusion of Ni on a thermally grown silicon dioxide ultrathin film (5-50 Å), and the bulk diffusion of Ni through the silicon dioxide film into the single crystal silicon substrate have been studied by XPS, HREELS, LEED and AFM. Nickel agglomeration on the oxide surface occurs in the 100-850 K regime, while bulk Ni diffusion through the thin oxide layer to the Si substrate occurs in the 700-1050 K regime. The onset of bulk Ni diffusion is dependent on the oxide thickness; thicker oxides reduce the rate of Ni penetration [1]. Above 950-1100 K. the oxide layer desorbs leaving nickel silicide on silicon.

Original languageEnglish
Pages (from-to)102-110
Number of pages9
JournalSurface Science
Volume265
Issue number1-3
DOIs
Publication statusPublished - Apr 1 1992

Fingerprint

surface diffusion
Nickel
Silicon Dioxide
Oxides
Silica
nickel
silicon dioxide
oxides
Silicon
Surface diffusion
Ultrathin films
silicon
Substrates
agglomeration
Agglomeration
penetration
X ray photoelectron spectroscopy
Single crystals
atomic force microscopy
single crystals

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Surface and bulk diffusion of adsorbed nickel on ultrathin thermally grown silicon dioxide. / Mayer, J. T.; Lin, R. F.; Garfunkel, Eric.

In: Surface Science, Vol. 265, No. 1-3, 01.04.1992, p. 102-110.

Research output: Contribution to journalArticle

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