Surface characterization of silicon on insulator material

K. C. Lin, O. W. Holland, L. C. Feldman, H. H. Weitering

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)

Abstract

The surface of ultrathin silicon on insulator (SOI) material has been characterized with surface science analysis techniques including atomic-resolution scanning tunneling microscopy. It is shown that the (100) SOI surface can be fabricated with a comparable degree of structural perfection as the (100) surface of bulk Si. Fermi level pinning by "type C" dimer defects results in a fully depleted and thus effectively insulating Si film.

Original languageEnglish
Pages (from-to)2313-2315
Number of pages3
JournalApplied Physics Letters
Volume72
Issue number18
DOIs
Publication statusPublished - Dec 1 1998

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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