The surface of ultrathin silicon on insulator (SOI) material has been characterized with surface science analysis techniques including atomic-resolution scanning tunneling microscopy. It is shown that the (100) SOI surface can be fabricated with a comparable degree of structural perfection as the (100) surface of bulk Si. Fermi level pinning by "type C" dimer defects results in a fully depleted and thus effectively insulating Si film.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)