Surface characterization of silicon on insulator material

K. C. Lin, O. W. Holland, Leonard C Feldman, H. H. Weitering

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

The surface of ultrathin silicon on insulator (SOI) material has been characterized with surface science analysis techniques including atomic-resolution scanning tunneling microscopy. It is shown that the (100) SOI surface can be fabricated with a comparable degree of structural perfection as the (100) surface of bulk Si. Fermi level pinning by "type C" dimer defects results in a fully depleted and thus effectively insulating Si film.

Original languageEnglish
Pages (from-to)2313-2315
Number of pages3
JournalApplied Physics Letters
Volume72
Issue number18
DOIs
Publication statusPublished - 1998

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insulators
silicon
scanning tunneling microscopy
dimers
defects

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Surface characterization of silicon on insulator material. / Lin, K. C.; Holland, O. W.; Feldman, Leonard C; Weitering, H. H.

In: Applied Physics Letters, Vol. 72, No. 18, 1998, p. 2313-2315.

Research output: Contribution to journalArticle

Lin, K. C. ; Holland, O. W. ; Feldman, Leonard C ; Weitering, H. H. / Surface characterization of silicon on insulator material. In: Applied Physics Letters. 1998 ; Vol. 72, No. 18. pp. 2313-2315.
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