Surface damage on diamond membranes fabricated by ion implantation and lift-off

V. S. Drumm, A. D C Alves, B. A. Fairchild, K. Ganesan, J. C. McCallum, D. N. Jamieson, S. Prawer, S. Rubanov, R. Kalish, Leonard C Feldman

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Thin membranes with excellent optical properties are essential elements in diamond based photonic systems. Due to the chemical inertness of diamond, ion beam processing must be employed to carve photonic structures. One method to realize such membranes is ion-implantation graphitization followed by chemical removal of the sacrificial graphite. The interface revealed when the sacrificial layer is removed has interesting properties. To investigate this interface, we employed the surface sensitive technique of grazing angle channeled Rutherford backscattering spectroscopy. Even after high temperature annealing and chemical etching a thin layer of damaged diamond remains, however, it is removed by hydrogen plasma exposure.

Original languageEnglish
Article number231904
JournalApplied Physics Letters
Volume98
Issue number23
DOIs
Publication statusPublished - Jun 6 2011

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ion implantation
diamonds
membranes
damage
photonics
graphitization
hydrogen plasma
grazing
backscattering
graphite
ion beams
etching
optical properties
annealing
spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Drumm, V. S., Alves, A. D. C., Fairchild, B. A., Ganesan, K., McCallum, J. C., Jamieson, D. N., ... Feldman, L. C. (2011). Surface damage on diamond membranes fabricated by ion implantation and lift-off. Applied Physics Letters, 98(23), [231904]. https://doi.org/10.1063/1.3597223

Surface damage on diamond membranes fabricated by ion implantation and lift-off. / Drumm, V. S.; Alves, A. D C; Fairchild, B. A.; Ganesan, K.; McCallum, J. C.; Jamieson, D. N.; Prawer, S.; Rubanov, S.; Kalish, R.; Feldman, Leonard C.

In: Applied Physics Letters, Vol. 98, No. 23, 231904, 06.06.2011.

Research output: Contribution to journalArticle

Drumm, VS, Alves, ADC, Fairchild, BA, Ganesan, K, McCallum, JC, Jamieson, DN, Prawer, S, Rubanov, S, Kalish, R & Feldman, LC 2011, 'Surface damage on diamond membranes fabricated by ion implantation and lift-off', Applied Physics Letters, vol. 98, no. 23, 231904. https://doi.org/10.1063/1.3597223
Drumm VS, Alves ADC, Fairchild BA, Ganesan K, McCallum JC, Jamieson DN et al. Surface damage on diamond membranes fabricated by ion implantation and lift-off. Applied Physics Letters. 2011 Jun 6;98(23). 231904. https://doi.org/10.1063/1.3597223
Drumm, V. S. ; Alves, A. D C ; Fairchild, B. A. ; Ganesan, K. ; McCallum, J. C. ; Jamieson, D. N. ; Prawer, S. ; Rubanov, S. ; Kalish, R. ; Feldman, Leonard C. / Surface damage on diamond membranes fabricated by ion implantation and lift-off. In: Applied Physics Letters. 2011 ; Vol. 98, No. 23.
@article{2eb9c022a2064cd395f0737a698fb271,
title = "Surface damage on diamond membranes fabricated by ion implantation and lift-off",
abstract = "Thin membranes with excellent optical properties are essential elements in diamond based photonic systems. Due to the chemical inertness of diamond, ion beam processing must be employed to carve photonic structures. One method to realize such membranes is ion-implantation graphitization followed by chemical removal of the sacrificial graphite. The interface revealed when the sacrificial layer is removed has interesting properties. To investigate this interface, we employed the surface sensitive technique of grazing angle channeled Rutherford backscattering spectroscopy. Even after high temperature annealing and chemical etching a thin layer of damaged diamond remains, however, it is removed by hydrogen plasma exposure.",
author = "Drumm, {V. S.} and Alves, {A. D C} and Fairchild, {B. A.} and K. Ganesan and McCallum, {J. C.} and Jamieson, {D. N.} and S. Prawer and S. Rubanov and R. Kalish and Feldman, {Leonard C}",
year = "2011",
month = "6",
day = "6",
doi = "10.1063/1.3597223",
language = "English",
volume = "98",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "23",

}

TY - JOUR

T1 - Surface damage on diamond membranes fabricated by ion implantation and lift-off

AU - Drumm, V. S.

AU - Alves, A. D C

AU - Fairchild, B. A.

AU - Ganesan, K.

AU - McCallum, J. C.

AU - Jamieson, D. N.

AU - Prawer, S.

AU - Rubanov, S.

AU - Kalish, R.

AU - Feldman, Leonard C

PY - 2011/6/6

Y1 - 2011/6/6

N2 - Thin membranes with excellent optical properties are essential elements in diamond based photonic systems. Due to the chemical inertness of diamond, ion beam processing must be employed to carve photonic structures. One method to realize such membranes is ion-implantation graphitization followed by chemical removal of the sacrificial graphite. The interface revealed when the sacrificial layer is removed has interesting properties. To investigate this interface, we employed the surface sensitive technique of grazing angle channeled Rutherford backscattering spectroscopy. Even after high temperature annealing and chemical etching a thin layer of damaged diamond remains, however, it is removed by hydrogen plasma exposure.

AB - Thin membranes with excellent optical properties are essential elements in diamond based photonic systems. Due to the chemical inertness of diamond, ion beam processing must be employed to carve photonic structures. One method to realize such membranes is ion-implantation graphitization followed by chemical removal of the sacrificial graphite. The interface revealed when the sacrificial layer is removed has interesting properties. To investigate this interface, we employed the surface sensitive technique of grazing angle channeled Rutherford backscattering spectroscopy. Even after high temperature annealing and chemical etching a thin layer of damaged diamond remains, however, it is removed by hydrogen plasma exposure.

UR - http://www.scopus.com/inward/record.url?scp=79959327650&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79959327650&partnerID=8YFLogxK

U2 - 10.1063/1.3597223

DO - 10.1063/1.3597223

M3 - Article

AN - SCOPUS:79959327650

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 23

M1 - 231904

ER -