Surface effects in layered semiconductors Bi2Se3 and Bi2Te3

S. Urazhdin, D. Bilc, S. D. Mahanti, S. H. Tessmer, Theodora Kyratsi, M. G. Kanatzidis

Research output: Contribution to journalArticle

95 Citations (Scopus)

Abstract

Scanning tunneling spectroscopy of Bi2Se3 and Bi2Te3 layered narrow gap semiconductors reveals finite in-gap density of states and suppressed conduction in the energy range of high valence-band states. Electronic structure calculations suggest that the surface effects are responsible for these properties. Conversely, the interlayer coupling has a strong effect on the bulk near-gap electronic structure. These properties may prove to be important for the thermoelectric performance of these and other related chalcogenides.

Original languageEnglish
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume69
Issue number8
DOIs
Publication statusPublished - Jan 1 2004

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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