Surface effects in layered semiconductors Bi2Se3 and Bi2Te3

S. Urazhdin, D. Bilc, S. D. Mahanti, S. H. Tessmer, Theodora Kyratsi, Mercouri G Kanatzidis

Research output: Contribution to journalArticle

89 Citations (Scopus)

Abstract

Scanning tunneling spectroscopy of Bi2Se3 and Bi2Te3 layered narrow gap semiconductors reveals finite in-gap density of states and suppressed conduction in the energy range of high valence-band states. Electronic structure calculations suggest that the surface effects are responsible for these properties. Conversely, the interlayer coupling has a strong effect on the bulk near-gap electronic structure. These properties may prove to be important for the thermoelectric performance of these and other related chalcogenides.

Original languageEnglish
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume69
Issue number8
DOIs
Publication statusPublished - Jan 1 2004

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Electronic structure
Chalcogenides
Valence bands
electronic structure
chalcogenides
Spectroscopy
Semiconductor materials
Scanning
interlayers
valence
conduction
scanning
spectroscopy
Layered semiconductors
energy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Surface effects in layered semiconductors Bi2Se3 and Bi2Te3. / Urazhdin, S.; Bilc, D.; Mahanti, S. D.; Tessmer, S. H.; Kyratsi, Theodora; Kanatzidis, Mercouri G.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 69, No. 8, 01.01.2004.

Research output: Contribution to journalArticle

Urazhdin, S. ; Bilc, D. ; Mahanti, S. D. ; Tessmer, S. H. ; Kyratsi, Theodora ; Kanatzidis, Mercouri G. / Surface effects in layered semiconductors Bi2Se3 and Bi2Te3. In: Physical Review B - Condensed Matter and Materials Physics. 2004 ; Vol. 69, No. 8.
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