Surface electronic structure of CeN

M. R. Norman, E. Wimmer, Arthur J Freeman

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The first detailed all-electron local-density study of the surface electronic structure of an f-electron compound, CeN(001), is presented using the full-potential linearized-augmented-plane-wave method. Small but significant differences between the surface and bulk predictions are analyzed using recent photoemission data. In particular, attention is addressed to a surface chemical shift of 1 eV for the 4f states in CeN that has been deduced from photoemission experiments. The results of the present study of the CeN(001) surface do not support this picture. Rather, it is suggested that the 4f photoemission peak at 1.2 eV below the Fermi level might be caused by (surface) vacancies in CeN, or by more complicated final-state effects.

Original languageEnglish
Pages (from-to)7830-7834
Number of pages5
JournalPhysical Review B
Volume32
Issue number12
DOIs
Publication statusPublished - 1985

Fingerprint

Electronic structure
electronic structure
Photoemission
photoelectric emission
Chemical shift
Fermi level
Vacancies
Intermetallics
intermetallics
chemical equilibrium
plane waves
Electrons
predictions
electrons
Experiments

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Surface electronic structure of CeN. / Norman, M. R.; Wimmer, E.; Freeman, Arthur J.

In: Physical Review B, Vol. 32, No. 12, 1985, p. 7830-7834.

Research output: Contribution to journalArticle

Norman, M. R. ; Wimmer, E. ; Freeman, Arthur J. / Surface electronic structure of CeN. In: Physical Review B. 1985 ; Vol. 32, No. 12. pp. 7830-7834.
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