The surface etching kinetics of hydrogen plasma on InP have been studied using Auger electron spectroscopy. It is found that the surface hydrocarbon contamination can be removed with a low power density (15 mW cm-3) of hydrogen plasma. At higher power phosphorus is preferentially removed by the hydrogen atoms in the form of hydrides, leaving the surface rich in In. The excess In is oxidized at high background pressure (∼10-6 Torr) by residual water vapor. However, at low base pressure (≲10-7 Torr) the native oxide (∼10 Å) can be etched away.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)