Surface etching kinetics of hydrogen plasma on InP

C. W. Tu, Robert P. H. Chang, A. R. Schlier

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

The surface etching kinetics of hydrogen plasma on InP have been studied using Auger electron spectroscopy. It is found that the surface hydrocarbon contamination can be removed with a low power density (15 mW cm-3) of hydrogen plasma. At higher power phosphorus is preferentially removed by the hydrogen atoms in the form of hydrides, leaving the surface rich in In. The excess In is oxidized at high background pressure (∼10-6 Torr) by residual water vapor. However, at low base pressure (≲10-7 Torr) the native oxide (∼10 Å) can be etched away.

Original languageEnglish
Pages (from-to)80-82
Number of pages3
JournalApplied Physics Letters
Volume41
Issue number1
DOIs
Publication statusPublished - 1982

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hydrogen plasma
etching
kinetics
base pressure
Auger spectroscopy
hydrides
electron spectroscopy
water vapor
phosphorus
radiant flux density
hydrogen atoms
contamination
low pressure
hydrocarbons
oxides

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Surface etching kinetics of hydrogen plasma on InP. / Tu, C. W.; Chang, Robert P. H.; Schlier, A. R.

In: Applied Physics Letters, Vol. 41, No. 1, 1982, p. 80-82.

Research output: Contribution to journalArticle

Tu, C. W. ; Chang, Robert P. H. ; Schlier, A. R. / Surface etching kinetics of hydrogen plasma on InP. In: Applied Physics Letters. 1982 ; Vol. 41, No. 1. pp. 80-82.
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