Surface modification of SnO2 photoelectrodes in dye-sensitized solar cells: Significant improvements in photovoltage via Al2O3 atomic layer deposition

Chaiya Prasittichai, Joseph T. Hupp

Research output: Contribution to journalConference article

Abstract

We report here the exploitation of ultrathin layers of Al2O3 deposited via atomic layer deposition (ALD) on SnO2 photoanodes used in dye-sensitized solar cells featuring the I3-/I- couple as the redox electrolyte.We find that a single ALD cycle of Al2O3 increases the lifetimes of injected electrons by more than 2 orders of magnitude. The modified SnO2 photoanode yields nearly a 2-fold improvement fill factor and a greater than 2-fold increase in open-circuit photovoltage, with a slight increase in short-circuit photocurrent. The overall energy conversion efficiency increases by roughly 5-fold. The effects appear to arise primarily from passivation of reactive, low-energy tin-oxide surface states, with bandedge shifts and tunneling based blocking behavior playing only secondary roles.

Original languageEnglish
JournalACS National Meeting Book of Abstracts
Publication statusPublished - Aug 25 2011
Event241st ACS National Meeting and Exposition - Anaheim, CA, United States
Duration: Mar 27 2011Mar 31 2011

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ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)

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