Abstract
Work functions, ionization potentials (electron affinities) and Fermi level positions measured in-situ by photoelectron spectroscopy at surfaces of transparent conducting oxides are presented. Thin films of ZnO, ZnO:Al, SnO2, SnO2:Sb, In2O3, In2O3:Sn, and In2O3:(Zn,Sn) are prepared by magnetron sputtering. The Fermi level position is strongly affected by the oxygen content in the sputter gas. The ionization potential and work function of ZnO are strongly affected by surface orientation. In contrast, SnO2-based and In2O3-based materials show pronounced changes of ionization potential and work function induced by surface oxidation and reduction. Unlike SnO2, the oxidation of the In2O3-based TCO surfaces does not occur during deposition but can be induced by post-deposition treatments.
| Original language | English |
|---|---|
| Pages (from-to) | 1197-1203 |
| Number of pages | 7 |
| Journal | Thin Solid Films |
| Volume | 518 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - Dec 15 2009 |
Fingerprint
Keywords
- InO
- Magnetron sputtering
- Photoemission
- SnO
- TCO
- Thin film
- Work function
- ZnO
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Materials Chemistry
- Metals and Alloys
- Surfaces, Coatings and Films
- Surfaces and Interfaces
Cite this
Surface potentials of magnetron sputtered transparent conducting oxides. / Klein, A.; Körber, C.; Wachau, A.; Säuberlich, F.; Gassenbauer, Y.; Schafranek, R.; Harvey, S. P.; Mason, Thomas O.
In: Thin Solid Films, Vol. 518, No. 4, 15.12.2009, p. 1197-1203.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Surface potentials of magnetron sputtered transparent conducting oxides
AU - Klein, A.
AU - Körber, C.
AU - Wachau, A.
AU - Säuberlich, F.
AU - Gassenbauer, Y.
AU - Schafranek, R.
AU - Harvey, S. P.
AU - Mason, Thomas O
PY - 2009/12/15
Y1 - 2009/12/15
N2 - Work functions, ionization potentials (electron affinities) and Fermi level positions measured in-situ by photoelectron spectroscopy at surfaces of transparent conducting oxides are presented. Thin films of ZnO, ZnO:Al, SnO2, SnO2:Sb, In2O3, In2O3:Sn, and In2O3:(Zn,Sn) are prepared by magnetron sputtering. The Fermi level position is strongly affected by the oxygen content in the sputter gas. The ionization potential and work function of ZnO are strongly affected by surface orientation. In contrast, SnO2-based and In2O3-based materials show pronounced changes of ionization potential and work function induced by surface oxidation and reduction. Unlike SnO2, the oxidation of the In2O3-based TCO surfaces does not occur during deposition but can be induced by post-deposition treatments.
AB - Work functions, ionization potentials (electron affinities) and Fermi level positions measured in-situ by photoelectron spectroscopy at surfaces of transparent conducting oxides are presented. Thin films of ZnO, ZnO:Al, SnO2, SnO2:Sb, In2O3, In2O3:Sn, and In2O3:(Zn,Sn) are prepared by magnetron sputtering. The Fermi level position is strongly affected by the oxygen content in the sputter gas. The ionization potential and work function of ZnO are strongly affected by surface orientation. In contrast, SnO2-based and In2O3-based materials show pronounced changes of ionization potential and work function induced by surface oxidation and reduction. Unlike SnO2, the oxidation of the In2O3-based TCO surfaces does not occur during deposition but can be induced by post-deposition treatments.
KW - InO
KW - Magnetron sputtering
KW - Photoemission
KW - SnO
KW - TCO
KW - Thin film
KW - Work function
KW - ZnO
UR - http://www.scopus.com/inward/record.url?scp=71649101383&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=71649101383&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2009.05.057
DO - 10.1016/j.tsf.2009.05.057
M3 - Article
AN - SCOPUS:71649101383
VL - 518
SP - 1197
EP - 1203
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 4
ER -