Surface potentials of magnetron sputtered transparent conducting oxides

A. Klein; C. Körber; A. Wachau; F. Säuberlich; Y. Gassenbauer; R. Schafranek; S. P. Harvey; T. O. Mason

doi:10.1016/j.tsf.2009.05.057

Surface potentials of magnetron sputtered transparent conducting oxides

A. Klein, C. Körber, A. Wachau, F. Säuberlich, Y. Gassenbauer, R. Schafranek, S. P. Harvey, T. O. Mason

Northwestern University

Research output: Contribution to journal › Article

112 Citations (Scopus)

Abstract

Work functions, ionization potentials (electron affinities) and Fermi level positions measured in-situ by photoelectron spectroscopy at surfaces of transparent conducting oxides are presented. Thin films of ZnO, ZnO:Al, SnO₂, SnO₂:Sb, In₂O₃, In₂O₃:Sn, and In₂O₃:(Zn,Sn) are prepared by magnetron sputtering. The Fermi level position is strongly affected by the oxygen content in the sputter gas. The ionization potential and work function of ZnO are strongly affected by surface orientation. In contrast, SnO₂-based and In₂O₃-based materials show pronounced changes of ionization potential and work function induced by surface oxidation and reduction. Unlike SnO₂, the oxidation of the In₂O₃-based TCO surfaces does not occur during deposition but can be induced by post-deposition treatments.

Original language	English
Pages (from-to)	1197-1203
Number of pages	7
Journal	Thin Solid Films
Volume	518
Issue number	4
DOIs	https://doi.org/10.1016/j.tsf.2009.05.057
Publication status	Published - Dec 15 2009

Keywords

InO
Magnetron sputtering
Photoemission
SnO
TCO
Thin film
Work function
ZnO

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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Klein, A., Körber, C., Wachau, A., Säuberlich, F., Gassenbauer, Y., Schafranek, R., Harvey, S. P., & Mason, T. O. (2009). Surface potentials of magnetron sputtered transparent conducting oxides. Thin Solid Films, 518(4), 1197-1203. https://doi.org/10.1016/j.tsf.2009.05.057

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abstract = "Work functions, ionization potentials (electron affinities) and Fermi level positions measured in-situ by photoelectron spectroscopy at surfaces of transparent conducting oxides are presented. Thin films of ZnO, ZnO:Al, SnO2, SnO2:Sb, In2O3, In2O3:Sn, and In2O3:(Zn,Sn) are prepared by magnetron sputtering. The Fermi level position is strongly affected by the oxygen content in the sputter gas. The ionization potential and work function of ZnO are strongly affected by surface orientation. In contrast, SnO2-based and In2O3-based materials show pronounced changes of ionization potential and work function induced by surface oxidation and reduction. Unlike SnO2, the oxidation of the In2O3-based TCO surfaces does not occur during deposition but can be induced by post-deposition treatments.",

keywords = "InO, Magnetron sputtering, Photoemission, SnO, TCO, Thin film, Work function, ZnO",

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AU - Klein, A.

AU - Körber, C.

AU - Wachau, A.

AU - Säuberlich, F.

AU - Gassenbauer, Y.

AU - Schafranek, R.

AU - Harvey, S. P.

AU - Mason, T. O.

PY - 2009/12/15

Y1 - 2009/12/15

N2 - Work functions, ionization potentials (electron affinities) and Fermi level positions measured in-situ by photoelectron spectroscopy at surfaces of transparent conducting oxides are presented. Thin films of ZnO, ZnO:Al, SnO2, SnO2:Sb, In2O3, In2O3:Sn, and In2O3:(Zn,Sn) are prepared by magnetron sputtering. The Fermi level position is strongly affected by the oxygen content in the sputter gas. The ionization potential and work function of ZnO are strongly affected by surface orientation. In contrast, SnO2-based and In2O3-based materials show pronounced changes of ionization potential and work function induced by surface oxidation and reduction. Unlike SnO2, the oxidation of the In2O3-based TCO surfaces does not occur during deposition but can be induced by post-deposition treatments.

AB - Work functions, ionization potentials (electron affinities) and Fermi level positions measured in-situ by photoelectron spectroscopy at surfaces of transparent conducting oxides are presented. Thin films of ZnO, ZnO:Al, SnO2, SnO2:Sb, In2O3, In2O3:Sn, and In2O3:(Zn,Sn) are prepared by magnetron sputtering. The Fermi level position is strongly affected by the oxygen content in the sputter gas. The ionization potential and work function of ZnO are strongly affected by surface orientation. In contrast, SnO2-based and In2O3-based materials show pronounced changes of ionization potential and work function induced by surface oxidation and reduction. Unlike SnO2, the oxidation of the In2O3-based TCO surfaces does not occur during deposition but can be induced by post-deposition treatments.

KW - InO

KW - Magnetron sputtering

KW - Photoemission

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KW - TCO

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KW - Work function

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