Abstract
The effects of various interface preparations on atomic layer chemical vapor deposition (ALCVD) deposited Al2O3 and ZrO2 dielectrics properties were investigated by X-ray photoelectron spectroscopy (XPS), attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR), medium energy ion scattering (MEIS) and transmission electron microscopy (TEM). H-terminated Si, SiO2 and SiOxNy surfaces were used as substrates upon which the dielectric was deposited. Thermal annealing of SiO2 in NH3 forms an oxynitride; subsequent deposition of a ZrO2/Al2O3 bi-layer stack resulted in a capacitor structure with an equivalent oxide thickness (EOT) of ∼ 0.8 nm and a leakage current of 3 × 10-4 A/cm2 at -1 + Vfb. This is in contrast to capacitor structures grown on H-terminated Si where high leakage was found. The growth of additional interfacial SiO2 during processing, a critical problem in nano-electronic device applications, is temperature dependent with ZrO2 exhibiting a higher oxygen permeability than Al2O3. Use of a polysilicon cap was shown to be effective at blocking oxygen absorption and transport through the high-k dielectrics, with stability up to 1100°C.
| Original language | English |
|---|---|
| Pages (from-to) | 259-272 |
| Number of pages | 14 |
| Journal | Microelectronic Engineering |
| Volume | 65 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - Mar 2003 |
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Keywords
- Atomic layer chemical vapor deposition
- High-k dielectrics
- Interface
ASJC Scopus subject areas
- Hardware and Architecture
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Surfaces, Coatings and Films
- Atomic and Molecular Physics, and Optics
Cite this
Surface preparation and interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition. / Tsai, W.; Carter, R. J.; Nohira, H.; Caymax, M.; Conard, T.; Cosnier, V.; DeGendt, S.; Heyns, M.; Petry, J.; Richard, O.; Vandervorst, W.; Young, E.; Zhao, C.; Maes, J.; Tuominen, M.; Schulte, W. H.; Garfunkel, Eric; Gustafsson, T.
In: Microelectronic Engineering, Vol. 65, No. 3, 03.2003, p. 259-272.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Surface preparation and interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition
AU - Tsai, W.
AU - Carter, R. J.
AU - Nohira, H.
AU - Caymax, M.
AU - Conard, T.
AU - Cosnier, V.
AU - DeGendt, S.
AU - Heyns, M.
AU - Petry, J.
AU - Richard, O.
AU - Vandervorst, W.
AU - Young, E.
AU - Zhao, C.
AU - Maes, J.
AU - Tuominen, M.
AU - Schulte, W. H.
AU - Garfunkel, Eric
AU - Gustafsson, T.
PY - 2003/3
Y1 - 2003/3
N2 - The effects of various interface preparations on atomic layer chemical vapor deposition (ALCVD) deposited Al2O3 and ZrO2 dielectrics properties were investigated by X-ray photoelectron spectroscopy (XPS), attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR), medium energy ion scattering (MEIS) and transmission electron microscopy (TEM). H-terminated Si, SiO2 and SiOxNy surfaces were used as substrates upon which the dielectric was deposited. Thermal annealing of SiO2 in NH3 forms an oxynitride; subsequent deposition of a ZrO2/Al2O3 bi-layer stack resulted in a capacitor structure with an equivalent oxide thickness (EOT) of ∼ 0.8 nm and a leakage current of 3 × 10-4 A/cm2 at -1 + Vfb. This is in contrast to capacitor structures grown on H-terminated Si where high leakage was found. The growth of additional interfacial SiO2 during processing, a critical problem in nano-electronic device applications, is temperature dependent with ZrO2 exhibiting a higher oxygen permeability than Al2O3. Use of a polysilicon cap was shown to be effective at blocking oxygen absorption and transport through the high-k dielectrics, with stability up to 1100°C.
AB - The effects of various interface preparations on atomic layer chemical vapor deposition (ALCVD) deposited Al2O3 and ZrO2 dielectrics properties were investigated by X-ray photoelectron spectroscopy (XPS), attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR), medium energy ion scattering (MEIS) and transmission electron microscopy (TEM). H-terminated Si, SiO2 and SiOxNy surfaces were used as substrates upon which the dielectric was deposited. Thermal annealing of SiO2 in NH3 forms an oxynitride; subsequent deposition of a ZrO2/Al2O3 bi-layer stack resulted in a capacitor structure with an equivalent oxide thickness (EOT) of ∼ 0.8 nm and a leakage current of 3 × 10-4 A/cm2 at -1 + Vfb. This is in contrast to capacitor structures grown on H-terminated Si where high leakage was found. The growth of additional interfacial SiO2 during processing, a critical problem in nano-electronic device applications, is temperature dependent with ZrO2 exhibiting a higher oxygen permeability than Al2O3. Use of a polysilicon cap was shown to be effective at blocking oxygen absorption and transport through the high-k dielectrics, with stability up to 1100°C.
KW - Atomic layer chemical vapor deposition
KW - High-k dielectrics
KW - Interface
UR - http://www.scopus.com/inward/record.url?scp=0037363322&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0037363322&partnerID=8YFLogxK
U2 - 10.1016/S0167-9317(02)00898-5
DO - 10.1016/S0167-9317(02)00898-5
M3 - Article
VL - 65
SP - 259
EP - 272
JO - Microelectronic Engineering
JF - Microelectronic Engineering
SN - 0167-9317
IS - 3
ER -