Surface preparation and interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition

W. Tsai, R. J. Carter, H. Nohira, M. Caymax, T. Conard, V. Cosnier, S. DeGendt, M. Heyns, J. Petry, O. Richard, W. Vandervorst, E. Young, C. Zhao, J. Maes, M. Tuominen, W. H. Schulte, Eric Garfunkel, T. Gustafsson

Research output: Contribution to journalArticle

57 Citations (Scopus)

Abstract

The effects of various interface preparations on atomic layer chemical vapor deposition (ALCVD) deposited Al2O3 and ZrO2 dielectrics properties were investigated by X-ray photoelectron spectroscopy (XPS), attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR), medium energy ion scattering (MEIS) and transmission electron microscopy (TEM). H-terminated Si, SiO2 and SiOxNy surfaces were used as substrates upon which the dielectric was deposited. Thermal annealing of SiO2 in NH3 forms an oxynitride; subsequent deposition of a ZrO2/Al2O3 bi-layer stack resulted in a capacitor structure with an equivalent oxide thickness (EOT) of ∼ 0.8 nm and a leakage current of 3 × 10-4 A/cm2 at -1 + Vfb. This is in contrast to capacitor structures grown on H-terminated Si where high leakage was found. The growth of additional interfacial SiO2 during processing, a critical problem in nano-electronic device applications, is temperature dependent with ZrO2 exhibiting a higher oxygen permeability than Al2O3. Use of a polysilicon cap was shown to be effective at blocking oxygen absorption and transport through the high-k dielectrics, with stability up to 1100°C.

Original languageEnglish
Pages (from-to)259-272
Number of pages14
JournalMicroelectronic Engineering
Volume65
Issue number3
DOIs
Publication statusPublished - Mar 2003

Fingerprint

Chemical vapor deposition
capacitors
Capacitors
leakage
vapor deposition
Oxygen
preparation
Nanoelectronics
oxynitrides
ion scattering
oxygen
Polysilicon
caps
Leakage currents
Dielectric properties
Oxides
Fourier transform infrared spectroscopy
dielectric properties
permeability
X ray photoelectron spectroscopy

Keywords

  • Atomic layer chemical vapor deposition
  • High-k dielectrics
  • Interface

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics

Cite this

Surface preparation and interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition. / Tsai, W.; Carter, R. J.; Nohira, H.; Caymax, M.; Conard, T.; Cosnier, V.; DeGendt, S.; Heyns, M.; Petry, J.; Richard, O.; Vandervorst, W.; Young, E.; Zhao, C.; Maes, J.; Tuominen, M.; Schulte, W. H.; Garfunkel, Eric; Gustafsson, T.

In: Microelectronic Engineering, Vol. 65, No. 3, 03.2003, p. 259-272.

Research output: Contribution to journalArticle

Tsai, W, Carter, RJ, Nohira, H, Caymax, M, Conard, T, Cosnier, V, DeGendt, S, Heyns, M, Petry, J, Richard, O, Vandervorst, W, Young, E, Zhao, C, Maes, J, Tuominen, M, Schulte, WH, Garfunkel, E & Gustafsson, T 2003, 'Surface preparation and interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition', Microelectronic Engineering, vol. 65, no. 3, pp. 259-272. https://doi.org/10.1016/S0167-9317(02)00898-5
Tsai, W. ; Carter, R. J. ; Nohira, H. ; Caymax, M. ; Conard, T. ; Cosnier, V. ; DeGendt, S. ; Heyns, M. ; Petry, J. ; Richard, O. ; Vandervorst, W. ; Young, E. ; Zhao, C. ; Maes, J. ; Tuominen, M. ; Schulte, W. H. ; Garfunkel, Eric ; Gustafsson, T. / Surface preparation and interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition. In: Microelectronic Engineering. 2003 ; Vol. 65, No. 3. pp. 259-272.
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AU - Tsai, W.

AU - Carter, R. J.

AU - Nohira, H.

AU - Caymax, M.

AU - Conard, T.

AU - Cosnier, V.

AU - DeGendt, S.

AU - Heyns, M.

AU - Petry, J.

AU - Richard, O.

AU - Vandervorst, W.

AU - Young, E.

AU - Zhao, C.

AU - Maes, J.

AU - Tuominen, M.

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AU - Garfunkel, Eric

AU - Gustafsson, T.

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