Surface preparation and interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition

W. Tsai; R. J. Carter; H. Nohira; M. Caymax; T. Conard; V. Cosnier; S. DeGendt; M. Heyns; J. Petry; O. Richard; W. Vandervorst; E. Young; C. Zhao; J. Maes; M. Tuominen; W. H. Schulte; E. Garfunkel; T. Gustafsson

doi:10.1016/S0167-9317(02)00898-5

Surface preparation and interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition

W. Tsai, R. J. Carter, H. Nohira, M. Caymax, T. Conard, V. Cosnier, S. DeGendt, M. Heyns, J. Petry, O. Richard, W. Vandervorst, E. Young, C. Zhao, J. Maes, M. Tuominen, W. H. Schulte, E. Garfunkel, T. Gustafsson

Rutgers University

Research output: Contribution to journal › Article › peer-review

59 Citations (Scopus)

Abstract

The effects of various interface preparations on atomic layer chemical vapor deposition (ALCVD) deposited Al₂O₃ and ZrO₂ dielectrics properties were investigated by X-ray photoelectron spectroscopy (XPS), attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR), medium energy ion scattering (MEIS) and transmission electron microscopy (TEM). H-terminated Si, SiO₂ and SiO_xN_y surfaces were used as substrates upon which the dielectric was deposited. Thermal annealing of SiO₂ in NH₃ forms an oxynitride; subsequent deposition of a ZrO₂/Al₂O₃ bi-layer stack resulted in a capacitor structure with an equivalent oxide thickness (EOT) of ∼ 0.8 nm and a leakage current of 3 × 10^-4 A/cm² at -1 + V_fb. This is in contrast to capacitor structures grown on H-terminated Si where high leakage was found. The growth of additional interfacial SiO₂ during processing, a critical problem in nano-electronic device applications, is temperature dependent with ZrO₂ exhibiting a higher oxygen permeability than Al₂O₃. Use of a polysilicon cap was shown to be effective at blocking oxygen absorption and transport through the high-k dielectrics, with stability up to 1100°C.

Original language	English
Pages (from-to)	259-272
Number of pages	14
Journal	Microelectronic Engineering
Volume	65
Issue number	3
DOIs	https://doi.org/10.1016/S0167-9317(02)00898-5
Publication status	Published - Mar 2003

Keywords

Atomic layer chemical vapor deposition
High-k dielectrics
Interface

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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Tsai, W., Carter, R. J., Nohira, H., Caymax, M., Conard, T., Cosnier, V., DeGendt, S., Heyns, M., Petry, J., Richard, O., Vandervorst, W., Young, E., Zhao, C., Maes, J., Tuominen, M., Schulte, W. H., Garfunkel, E., & Gustafsson, T. (2003). Surface preparation and interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition. Microelectronic Engineering, 65(3), 259-272. https://doi.org/10.1016/S0167-9317(02)00898-5

Surface preparation and interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition. / Tsai, W.; Carter, R. J.; Nohira, H.; Caymax, M.; Conard, T.; Cosnier, V.; DeGendt, S.; Heyns, M.; Petry, J.; Richard, O.; Vandervorst, W.; Young, E.; Zhao, C.; Maes, J.; Tuominen, M.; Schulte, W. H.; Garfunkel, E.; Gustafsson, T.

In: Microelectronic Engineering, Vol. 65, No. 3, 03.2003, p. 259-272.

Research output: Contribution to journal › Article › peer-review

Tsai, W, Carter, RJ, Nohira, H, Caymax, M, Conard, T, Cosnier, V, DeGendt, S, Heyns, M, Petry, J, Richard, O, Vandervorst, W, Young, E, Zhao, C, Maes, J, Tuominen, M, Schulte, WH, Garfunkel, E & Gustafsson, T 2003, 'Surface preparation and interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition', Microelectronic Engineering, vol. 65, no. 3, pp. 259-272. https://doi.org/10.1016/S0167-9317(02)00898-5

Tsai, W. ; Carter, R. J. ; Nohira, H. ; Caymax, M. ; Conard, T. ; Cosnier, V. ; DeGendt, S. ; Heyns, M. ; Petry, J. ; Richard, O. ; Vandervorst, W. ; Young, E. ; Zhao, C. ; Maes, J. ; Tuominen, M. ; Schulte, W. H. ; Garfunkel, E. ; Gustafsson, T. / Surface preparation and interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition. In: Microelectronic Engineering. 2003 ; Vol. 65, No. 3. pp. 259-272.

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title = "Surface preparation and interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition",

abstract = "The effects of various interface preparations on atomic layer chemical vapor deposition (ALCVD) deposited Al2O3 and ZrO2 dielectrics properties were investigated by X-ray photoelectron spectroscopy (XPS), attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR), medium energy ion scattering (MEIS) and transmission electron microscopy (TEM). H-terminated Si, SiO2 and SiOxNy surfaces were used as substrates upon which the dielectric was deposited. Thermal annealing of SiO2 in NH3 forms an oxynitride; subsequent deposition of a ZrO2/Al2O3 bi-layer stack resulted in a capacitor structure with an equivalent oxide thickness (EOT) of ∼ 0.8 nm and a leakage current of 3 × 10-4 A/cm2 at -1 + Vfb. This is in contrast to capacitor structures grown on H-terminated Si where high leakage was found. The growth of additional interfacial SiO2 during processing, a critical problem in nano-electronic device applications, is temperature dependent with ZrO2 exhibiting a higher oxygen permeability than Al2O3. Use of a polysilicon cap was shown to be effective at blocking oxygen absorption and transport through the high-k dielectrics, with stability up to 1100°C.",

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author = "W. Tsai and Carter, {R. J.} and H. Nohira and M. Caymax and T. Conard and V. Cosnier and S. DeGendt and M. Heyns and J. Petry and O. Richard and W. Vandervorst and E. Young and C. Zhao and J. Maes and M. Tuominen and Schulte, {W. H.} and E. Garfunkel and T. Gustafsson",

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T1 - Surface preparation and interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition

AU - Tsai, W.

AU - Carter, R. J.

AU - Nohira, H.

AU - Caymax, M.

AU - Conard, T.

AU - Cosnier, V.

AU - DeGendt, S.

AU - Heyns, M.

AU - Petry, J.

AU - Richard, O.

AU - Vandervorst, W.

AU - Young, E.

AU - Zhao, C.

AU - Maes, J.

AU - Tuominen, M.

AU - Schulte, W. H.

AU - Garfunkel, E.

AU - Gustafsson, T.

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N2 - The effects of various interface preparations on atomic layer chemical vapor deposition (ALCVD) deposited Al2O3 and ZrO2 dielectrics properties were investigated by X-ray photoelectron spectroscopy (XPS), attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR), medium energy ion scattering (MEIS) and transmission electron microscopy (TEM). H-terminated Si, SiO2 and SiOxNy surfaces were used as substrates upon which the dielectric was deposited. Thermal annealing of SiO2 in NH3 forms an oxynitride; subsequent deposition of a ZrO2/Al2O3 bi-layer stack resulted in a capacitor structure with an equivalent oxide thickness (EOT) of ∼ 0.8 nm and a leakage current of 3 × 10-4 A/cm2 at -1 + Vfb. This is in contrast to capacitor structures grown on H-terminated Si where high leakage was found. The growth of additional interfacial SiO2 during processing, a critical problem in nano-electronic device applications, is temperature dependent with ZrO2 exhibiting a higher oxygen permeability than Al2O3. Use of a polysilicon cap was shown to be effective at blocking oxygen absorption and transport through the high-k dielectrics, with stability up to 1100°C.

AB - The effects of various interface preparations on atomic layer chemical vapor deposition (ALCVD) deposited Al2O3 and ZrO2 dielectrics properties were investigated by X-ray photoelectron spectroscopy (XPS), attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR), medium energy ion scattering (MEIS) and transmission electron microscopy (TEM). H-terminated Si, SiO2 and SiOxNy surfaces were used as substrates upon which the dielectric was deposited. Thermal annealing of SiO2 in NH3 forms an oxynitride; subsequent deposition of a ZrO2/Al2O3 bi-layer stack resulted in a capacitor structure with an equivalent oxide thickness (EOT) of ∼ 0.8 nm and a leakage current of 3 × 10-4 A/cm2 at -1 + Vfb. This is in contrast to capacitor structures grown on H-terminated Si where high leakage was found. The growth of additional interfacial SiO2 during processing, a critical problem in nano-electronic device applications, is temperature dependent with ZrO2 exhibiting a higher oxygen permeability than Al2O3. Use of a polysilicon cap was shown to be effective at blocking oxygen absorption and transport through the high-k dielectrics, with stability up to 1100°C.

KW - Atomic layer chemical vapor deposition

KW - High-k dielectrics

KW - Interface

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