TY - JOUR
T1 - Surface preparation and interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition
AU - Tsai, W.
AU - Carter, R. J.
AU - Nohira, H.
AU - Caymax, M.
AU - Conard, T.
AU - Cosnier, V.
AU - DeGendt, S.
AU - Heyns, M.
AU - Petry, J.
AU - Richard, O.
AU - Vandervorst, W.
AU - Young, E.
AU - Zhao, C.
AU - Maes, J.
AU - Tuominen, M.
AU - Schulte, W. H.
AU - Garfunkel, E.
AU - Gustafsson, T.
N1 - Copyright:
Copyright 2004 Elsevier Science B.V., Amsterdam. All rights reserved.
PY - 2003/3
Y1 - 2003/3
N2 - The effects of various interface preparations on atomic layer chemical vapor deposition (ALCVD) deposited Al2O3 and ZrO2 dielectrics properties were investigated by X-ray photoelectron spectroscopy (XPS), attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR), medium energy ion scattering (MEIS) and transmission electron microscopy (TEM). H-terminated Si, SiO2 and SiOxNy surfaces were used as substrates upon which the dielectric was deposited. Thermal annealing of SiO2 in NH3 forms an oxynitride; subsequent deposition of a ZrO2/Al2O3 bi-layer stack resulted in a capacitor structure with an equivalent oxide thickness (EOT) of ∼ 0.8 nm and a leakage current of 3 × 10-4 A/cm2 at -1 + Vfb. This is in contrast to capacitor structures grown on H-terminated Si where high leakage was found. The growth of additional interfacial SiO2 during processing, a critical problem in nano-electronic device applications, is temperature dependent with ZrO2 exhibiting a higher oxygen permeability than Al2O3. Use of a polysilicon cap was shown to be effective at blocking oxygen absorption and transport through the high-k dielectrics, with stability up to 1100°C.
AB - The effects of various interface preparations on atomic layer chemical vapor deposition (ALCVD) deposited Al2O3 and ZrO2 dielectrics properties were investigated by X-ray photoelectron spectroscopy (XPS), attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR), medium energy ion scattering (MEIS) and transmission electron microscopy (TEM). H-terminated Si, SiO2 and SiOxNy surfaces were used as substrates upon which the dielectric was deposited. Thermal annealing of SiO2 in NH3 forms an oxynitride; subsequent deposition of a ZrO2/Al2O3 bi-layer stack resulted in a capacitor structure with an equivalent oxide thickness (EOT) of ∼ 0.8 nm and a leakage current of 3 × 10-4 A/cm2 at -1 + Vfb. This is in contrast to capacitor structures grown on H-terminated Si where high leakage was found. The growth of additional interfacial SiO2 during processing, a critical problem in nano-electronic device applications, is temperature dependent with ZrO2 exhibiting a higher oxygen permeability than Al2O3. Use of a polysilicon cap was shown to be effective at blocking oxygen absorption and transport through the high-k dielectrics, with stability up to 1100°C.
KW - Atomic layer chemical vapor deposition
KW - High-k dielectrics
KW - Interface
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U2 - 10.1016/S0167-9317(02)00898-5
DO - 10.1016/S0167-9317(02)00898-5
M3 - Article
AN - SCOPUS:0037363322
VL - 65
SP - 259
EP - 272
JO - Microelectronic Engineering
JF - Microelectronic Engineering
SN - 0167-9317
IS - 3
ER -