Surface properties of the refractory metal-nitride semiconductor ScN: Screened-exchange LDA-FLAPW investigations

C. Stampfl, R. Asahi, Arthur J Freeman

Research output: Contribution to journalArticle

42 Citations (Scopus)

Abstract

Density-functional theory calculations employing the screened-exchange local-density approximation (SX-LDA) with the full potential linearized augmented plane-wave method have recently shown that the relatively unexplored refractory nitrides ScN, YN, and LaN are semiconductors. For the ScN(001) surface, the present calculations predict that the ideal-relaxed surface has the lowest formation energy for most of the range of the allowed chemical potentials - and is semiconducting - while N-deficient structures, which are predicted to form for Sc-rich conditions, are metallic in nature. Compared to the LDA surface-state band structures, the SX-LDA selectively pushes down the valence bands for the Sc-terminated surface and pushes up the conduction bands for the N-terminated structure.

Original languageEnglish
Article number161204
Pages (from-to)1612041-1612044
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume65
Issue number16
Publication statusPublished - Apr 15 2002

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metal nitrides
refractory metals
Refractory metals
Nitrides
surface properties
Surface properties
Local density approximation
Semiconductor materials
Chemical potential
Surface states
Valence bands
Conduction bands
Refractory materials
Band structure
Density functional theory
refractories
energy of formation
approximation
nitrides
conduction bands

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Surface properties of the refractory metal-nitride semiconductor ScN : Screened-exchange LDA-FLAPW investigations. / Stampfl, C.; Asahi, R.; Freeman, Arthur J.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 65, No. 16, 161204, 15.04.2002, p. 1612041-1612044.

Research output: Contribution to journalArticle

@article{433e074d0abb426a9dda58214d7a0b23,
title = "Surface properties of the refractory metal-nitride semiconductor ScN: Screened-exchange LDA-FLAPW investigations",
abstract = "Density-functional theory calculations employing the screened-exchange local-density approximation (SX-LDA) with the full potential linearized augmented plane-wave method have recently shown that the relatively unexplored refractory nitrides ScN, YN, and LaN are semiconductors. For the ScN(001) surface, the present calculations predict that the ideal-relaxed surface has the lowest formation energy for most of the range of the allowed chemical potentials - and is semiconducting - while N-deficient structures, which are predicted to form for Sc-rich conditions, are metallic in nature. Compared to the LDA surface-state band structures, the SX-LDA selectively pushes down the valence bands for the Sc-terminated surface and pushes up the conduction bands for the N-terminated structure.",
author = "C. Stampfl and R. Asahi and Freeman, {Arthur J}",
year = "2002",
month = "4",
day = "15",
language = "English",
volume = "65",
pages = "1612041--1612044",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "16",

}

TY - JOUR

T1 - Surface properties of the refractory metal-nitride semiconductor ScN

T2 - Screened-exchange LDA-FLAPW investigations

AU - Stampfl, C.

AU - Asahi, R.

AU - Freeman, Arthur J

PY - 2002/4/15

Y1 - 2002/4/15

N2 - Density-functional theory calculations employing the screened-exchange local-density approximation (SX-LDA) with the full potential linearized augmented plane-wave method have recently shown that the relatively unexplored refractory nitrides ScN, YN, and LaN are semiconductors. For the ScN(001) surface, the present calculations predict that the ideal-relaxed surface has the lowest formation energy for most of the range of the allowed chemical potentials - and is semiconducting - while N-deficient structures, which are predicted to form for Sc-rich conditions, are metallic in nature. Compared to the LDA surface-state band structures, the SX-LDA selectively pushes down the valence bands for the Sc-terminated surface and pushes up the conduction bands for the N-terminated structure.

AB - Density-functional theory calculations employing the screened-exchange local-density approximation (SX-LDA) with the full potential linearized augmented plane-wave method have recently shown that the relatively unexplored refractory nitrides ScN, YN, and LaN are semiconductors. For the ScN(001) surface, the present calculations predict that the ideal-relaxed surface has the lowest formation energy for most of the range of the allowed chemical potentials - and is semiconducting - while N-deficient structures, which are predicted to form for Sc-rich conditions, are metallic in nature. Compared to the LDA surface-state band structures, the SX-LDA selectively pushes down the valence bands for the Sc-terminated surface and pushes up the conduction bands for the N-terminated structure.

UR - http://www.scopus.com/inward/record.url?scp=0037091426&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037091426&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0037091426

VL - 65

SP - 1612041

EP - 1612044

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 16

M1 - 161204

ER -