Surface structural damage produced in InP(100) by R.F. plasma or sputter deposition

W. C. Dautremont-Smith, Leonard C Feldman

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18 Citations (Scopus)


Rutherford backscattering detected at grazing angle under channeling conditions was employed to observe and quantify surface structural damage to InP(100) produced by dielectric deposition methods involving direct 13.56 MHz r.f. plasma exposure. Sputter deposition at any plasma power produced surface damage, to a maximum depth of about 30 Å at power densities within the range 0.25-2.2 W cm-2. In contrast, damage due to plasma deposition was not observable at any plasma power density up to 0.32 W cm-2 for InP substrates at either 250 or 31°C. This power level produced the high SiO2 deposition rate of 1500 Å min-1. Thus plasma deposition is particularly applicable to InP, whereas diode sputter deposition should be avoided for any application in which structural damage may be detrimental.

Original languageEnglish
Pages (from-to)187-196
Number of pages10
JournalThin Solid Films
Issue number2
Publication statusPublished - Jul 15 1983

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

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