Surface studies of crystalline and amorphous Zn-In-Sn-O transparent conducting oxides

Diana E. Proffit, Steven P. Harvey, Andreas Klein, Robert Schafranek, Jonathan D. Emery, D. Bruce Buchholz, Robert P. H. Chang, Michael J. Bedzyk, Thomas O Mason

Research output: Contribution to journalArticle

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Abstract

X-ray and ultraviolet photoelectron spectroscopy (UPS) studies were made of in situ RF magnetron-sputtered crystalline (c) and amorphous (a) Zn-In-Sn-O (ZITO) thin films, ex situ pulsed laser deposited c- and a-ZITO thin films, and bulk ZITO ceramics. Cosubstitution of Zn and Sn for In results in an increase of the In core level binding energy at a given Fermi level compared to that measured in undoped and Sn-doped In 2O 3 (ITO). In plots of work function vs. Fermi level, in situ c-ZITO and a-ZITO films have low ionization potentials (7.0-7.7 eV) that are similar to undoped In 2O 3. In contrast, dry-air-annealed in situ films, ex situ films, and bulk ceramics have higher ionization potentials (7.7-8.1 eV) that are more similar to ITO and match well with previous work on air-exposed surfaces. Kelvin Probe measurements were made of select a-ZITO films exposed to air and ultraviolet/ozone-treated so as to measure work functions under conditions commonly employed for device fabrication. Results (4.8-5.3 eV) were in good agreement with the UPS work functions of oxygen-exposed materials and with literature values. Lastly, a parallelogram plot of work function vs. Fermi level shows that a wider range of work functions is achievable in ZITO materials as compared to other transparent conducting oxides (Sb-doped SnO 2, Al-doped ZnO, Sn-doped In 2O 3), making ZITO more versatile for applications.

Original languageEnglish
Pages (from-to)5633-5639
Number of pages7
JournalThin Solid Films
Volume520
Issue number17
DOIs
Publication statusPublished - Jun 30 2012

Fingerprint

Oxides
Crystalline materials
conduction
Fermi level
oxides
Ultraviolet photoelectron spectroscopy
Ionization potential
ultraviolet spectroscopy
ITO (semiconductors)
ionization potentials
air
Air
plots
photoelectron spectroscopy
ceramics
parallelograms
Thin films
Core levels
Ozone
thin films

Keywords

  • Indium tin oxide
  • Thin film
  • Transparent conducting oxide
  • Ultraviolet photoelectron spectroscopy
  • Work function
  • X-ray photoelectron spectroscopy
  • Zinc indium tin oxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Proffit, D. E., Harvey, S. P., Klein, A., Schafranek, R., Emery, J. D., Buchholz, D. B., ... Mason, T. O. (2012). Surface studies of crystalline and amorphous Zn-In-Sn-O transparent conducting oxides. Thin Solid Films, 520(17), 5633-5639. https://doi.org/10.1016/j.tsf.2012.04.075

Surface studies of crystalline and amorphous Zn-In-Sn-O transparent conducting oxides. / Proffit, Diana E.; Harvey, Steven P.; Klein, Andreas; Schafranek, Robert; Emery, Jonathan D.; Buchholz, D. Bruce; Chang, Robert P. H.; Bedzyk, Michael J.; Mason, Thomas O.

In: Thin Solid Films, Vol. 520, No. 17, 30.06.2012, p. 5633-5639.

Research output: Contribution to journalArticle

Proffit, DE, Harvey, SP, Klein, A, Schafranek, R, Emery, JD, Buchholz, DB, Chang, RPH, Bedzyk, MJ & Mason, TO 2012, 'Surface studies of crystalline and amorphous Zn-In-Sn-O transparent conducting oxides', Thin Solid Films, vol. 520, no. 17, pp. 5633-5639. https://doi.org/10.1016/j.tsf.2012.04.075
Proffit DE, Harvey SP, Klein A, Schafranek R, Emery JD, Buchholz DB et al. Surface studies of crystalline and amorphous Zn-In-Sn-O transparent conducting oxides. Thin Solid Films. 2012 Jun 30;520(17):5633-5639. https://doi.org/10.1016/j.tsf.2012.04.075
Proffit, Diana E. ; Harvey, Steven P. ; Klein, Andreas ; Schafranek, Robert ; Emery, Jonathan D. ; Buchholz, D. Bruce ; Chang, Robert P. H. ; Bedzyk, Michael J. ; Mason, Thomas O. / Surface studies of crystalline and amorphous Zn-In-Sn-O transparent conducting oxides. In: Thin Solid Films. 2012 ; Vol. 520, No. 17. pp. 5633-5639.
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