Surfactant templated assembly of hexagonal mesostructured semiconductors based on |Ge4Q10|4- (Q=X, Se) and Pd2+ and Pt2+ ions

Pantelis N. Trikalitis; Krishnaswamy K. Rangan; Mercouri G. Kanatzidis

Surfactant templated assembly of hexagonal mesostructured semiconductors based on |Ge₄Q₁₀|^4- (Q=X, Se) and Pd²⁺ and Pt²⁺ ions

Pantelis N. Trikalitis, Krishnaswamy K. Rangan, Mercouri G. Kanatzidis

Northwestern University

Research output: Contribution to journal › Conference article

3 Citations (Scopus)

Abstract

Mesostructured semiconducting non-oxidic materials were prepared by linking [Ge₄Q₁₀]^4- (Q=S, Se) clusters with the square planar noble metal cations of Pd²⁺ and Pt²⁺ in the presence of cetylpyridinium surfactant molecules. The use of Pt²⁺ afforded materials with exceptionally high hexagonal pore order similar to those of high quality silica MCM-41. These materials are semiconductors with energy band gap in the range 1.8<E_g<2.5 eV.

Original language	English
Pages (from-to)	433-438
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	703
Publication status	Published - Jan 1 2002
Event	Nanophase and Nanocomposite Materials IV - Boston, MA, United States Duration: Nov 26 2001 → Nov 29 2001

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ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

Trikalitis, P. N., Rangan, K. K., & Kanatzidis, M. G. (2002). Surfactant templated assembly of hexagonal mesostructured semiconductors based on |Ge₄Q₁₀|^4- (Q=X, Se) and Pd²⁺ and Pt²⁺ ions. Materials Research Society Symposium - Proceedings, 703, 433-438.

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abstract = "Mesostructured semiconducting non-oxidic materials were prepared by linking [Ge4Q10]4- (Q=S, Se) clusters with the square planar noble metal cations of Pd2+ and Pt2+ in the presence of cetylpyridinium surfactant molecules. The use of Pt2+ afforded materials with exceptionally high hexagonal pore order similar to those of high quality silica MCM-41. These materials are semiconductors with energy band gap in the range 1.8<Eg<2.5 eV.",

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AU - Kanatzidis, Mercouri G.

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AB - Mesostructured semiconducting non-oxidic materials were prepared by linking [Ge4Q10]4- (Q=S, Se) clusters with the square planar noble metal cations of Pd2+ and Pt2+ in the presence of cetylpyridinium surfactant molecules. The use of Pt2+ afforded materials with exceptionally high hexagonal pore order similar to those of high quality silica MCM-41. These materials are semiconductors with energy band gap in the range 1.8<Eg<2.5 eV.

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T2 - Nanophase and Nanocomposite Materials IV

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