Abstract
Mesostructured semiconducting non-oxidic materials were prepared by linking [Ge4Q10]4- (Q=S, Se) clusters with the square planar noble metal cations of Pd2+ and Pt2+ in the presence of cetylpyridinium surfactant molecules. The use of Pt2+ afforded materials with exceptionally high hexagonal pore order similar to those of high quality silica MCM-41. These materials are semiconductors with energy band gap in the range 1.8g
| Original language | English |
|---|---|
| Title of host publication | Materials Research Society Symposium - Proceedings |
| Pages | 433-438 |
| Number of pages | 6 |
| Volume | 703 |
| Publication status | Published - 2002 |
| Event | Nanophase and Nanocomposite Materials IV - Boston, MA, United States Duration: Nov 26 2001 → Nov 29 2001 |
Other
| Other | Nanophase and Nanocomposite Materials IV |
|---|---|
| Country | United States |
| City | Boston, MA |
| Period | 11/26/01 → 11/29/01 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
Cite this
Surfactant templated assembly of hexagonal mesostructured semiconductors based on |Ge4Q10|4- (Q=X, Se) and Pd2+ and Pt2+ ions. / Trikalitis, Pantelis N.; Rangan, Krishnaswamy K.; Kanatzidis, Mercouri G.
Materials Research Society Symposium - Proceedings. Vol. 703 2002. p. 433-438.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Surfactant templated assembly of hexagonal mesostructured semiconductors based on |Ge4Q10|4- (Q=X, Se) and Pd2+ and Pt2+ ions
AU - Trikalitis, Pantelis N.
AU - Rangan, Krishnaswamy K.
AU - Kanatzidis, Mercouri G
PY - 2002
Y1 - 2002
N2 - Mesostructured semiconducting non-oxidic materials were prepared by linking [Ge4Q10]4- (Q=S, Se) clusters with the square planar noble metal cations of Pd2+ and Pt2+ in the presence of cetylpyridinium surfactant molecules. The use of Pt2+ afforded materials with exceptionally high hexagonal pore order similar to those of high quality silica MCM-41. These materials are semiconductors with energy band gap in the range 1.8g
AB - Mesostructured semiconducting non-oxidic materials were prepared by linking [Ge4Q10]4- (Q=S, Se) clusters with the square planar noble metal cations of Pd2+ and Pt2+ in the presence of cetylpyridinium surfactant molecules. The use of Pt2+ afforded materials with exceptionally high hexagonal pore order similar to those of high quality silica MCM-41. These materials are semiconductors with energy band gap in the range 1.8g
UR - http://www.scopus.com/inward/record.url?scp=0036353845&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0036353845&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0036353845
VL - 703
SP - 433
EP - 438
BT - Materials Research Society Symposium - Proceedings
ER -