Surfactant templated assembly of hexagonal mesostructured semiconductors based on |Ge4Q10|4- (Q=X, Se) and Pd2+ and Pt2+ ions

Pantelis N. Trikalitis; Krishnaswamy K. Rangan; Mercouri G Kanatzidis

Surfactant templated assembly of hexagonal mesostructured semiconductors based on |Ge₄Q₁₀|^4- (Q=X, Se) and Pd²⁺ and Pt²⁺ ions

Pantelis N. Trikalitis, Krishnaswamy K. Rangan, Mercouri G Kanatzidis

Northwestern University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

Mesostructured semiconducting non-oxidic materials were prepared by linking [Ge₄Q₁₀]^4- (Q=S, Se) clusters with the square planar noble metal cations of Pd²⁺ and Pt²⁺ in the presence of cetylpyridinium surfactant molecules. The use of Pt²⁺ afforded materials with exceptionally high hexagonal pore order similar to those of high quality silica MCM-41. These materials are semiconductors with energy band gap in the range 1.8g

Original language	English
Title of host publication	Materials Research Society Symposium - Proceedings
Pages	433-438
Number of pages	6
Volume	703
Publication status	Published - 2002
Event	Nanophase and Nanocomposite Materials IV - Boston, MA, United States Duration: Nov 26 2001 → Nov 29 2001

Other

Other	Nanophase and Nanocomposite Materials IV
Country	United States
City	Boston, MA
Period	11/26/01 → 11/29/01

Fingerprint

Surface-Active Agents

Surface active agents

Cetylpyridinium

Ions

Semiconductor materials

Multicarrier modulation

Precious metals

Silicon Dioxide

Band structure

Cations

Energy gap

Positive ions

Silica

Molecules

MCM-41

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

Trikalitis, P. N., Rangan, K. K., & Kanatzidis, M. G. (2002). Surfactant templated assembly of hexagonal mesostructured semiconductors based on |Ge₄Q₁₀|^4- (Q=X, Se) and Pd²⁺ and Pt²⁺ ions. In Materials Research Society Symposium - Proceedings (Vol. 703, pp. 433-438)

Surfactant templated assembly of hexagonal mesostructured semiconductors based on |Ge₄Q₁₀|^4- (Q=X, Se) and Pd²⁺ and Pt²⁺ ions. / Trikalitis, Pantelis N.; Rangan, Krishnaswamy K.; Kanatzidis, Mercouri G.

Materials Research Society Symposium - Proceedings. Vol. 703 2002. p. 433-438.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Trikalitis, PN, Rangan, KK & Kanatzidis, MG 2002, Surfactant templated assembly of hexagonal mesostructured semiconductors based on |Ge₄Q₁₀|^4- (Q=X, Se) and Pd²⁺ and Pt²⁺ ions. in Materials Research Society Symposium - Proceedings. vol. 703, pp. 433-438, Nanophase and Nanocomposite Materials IV, Boston, MA, United States, 11/26/01.

Trikalitis PN, Rangan KK, Kanatzidis MG. Surfactant templated assembly of hexagonal mesostructured semiconductors based on |Ge₄Q₁₀|^4- (Q=X, Se) and Pd²⁺ and Pt²⁺ ions. In Materials Research Society Symposium - Proceedings. Vol. 703. 2002. p. 433-438

Trikalitis, Pantelis N. ; Rangan, Krishnaswamy K. ; Kanatzidis, Mercouri G. / Surfactant templated assembly of hexagonal mesostructured semiconductors based on |Ge₄Q₁₀|^4- (Q=X, Se) and Pd²⁺ and Pt²⁺ ions. Materials Research Society Symposium - Proceedings. Vol. 703 2002. pp. 433-438

@inproceedings{239fce14d4e444b3893443c15894ee13,

title = "Surfactant templated assembly of hexagonal mesostructured semiconductors based on |Ge4Q10|4- (Q=X, Se) and Pd2+ and Pt2+ ions",

abstract = "Mesostructured semiconducting non-oxidic materials were prepared by linking [Ge4Q10]4- (Q=S, Se) clusters with the square planar noble metal cations of Pd2+ and Pt2+ in the presence of cetylpyridinium surfactant molecules. The use of Pt2+ afforded materials with exceptionally high hexagonal pore order similar to those of high quality silica MCM-41. These materials are semiconductors with energy band gap in the range 1.8g",

author = "Trikalitis, {Pantelis N.} and Rangan, {Krishnaswamy K.} and Kanatzidis, {Mercouri G}",

year = "2002",

language = "English",

volume = "703",

pages = "433--438",

booktitle = "Materials Research Society Symposium - Proceedings",

}

TY - GEN

T1 - Surfactant templated assembly of hexagonal mesostructured semiconductors based on |Ge4Q10|4- (Q=X, Se) and Pd2+ and Pt2+ ions

AU - Trikalitis, Pantelis N.

AU - Rangan, Krishnaswamy K.

AU - Kanatzidis, Mercouri G

PY - 2002

Y1 - 2002

N2 - Mesostructured semiconducting non-oxidic materials were prepared by linking [Ge4Q10]4- (Q=S, Se) clusters with the square planar noble metal cations of Pd2+ and Pt2+ in the presence of cetylpyridinium surfactant molecules. The use of Pt2+ afforded materials with exceptionally high hexagonal pore order similar to those of high quality silica MCM-41. These materials are semiconductors with energy band gap in the range 1.8g

AB - Mesostructured semiconducting non-oxidic materials were prepared by linking [Ge4Q10]4- (Q=S, Se) clusters with the square planar noble metal cations of Pd2+ and Pt2+ in the presence of cetylpyridinium surfactant molecules. The use of Pt2+ afforded materials with exceptionally high hexagonal pore order similar to those of high quality silica MCM-41. These materials are semiconductors with energy band gap in the range 1.8g

UR - http://www.scopus.com/inward/record.url?scp=0036353845&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036353845&partnerID=8YFLogxK

M3 - Conference contribution

VL - 703

SP - 433

EP - 438

BT - Materials Research Society Symposium - Proceedings

ER -