Switchable reflectivity on silicon from a composite VO 2-SiO 2 protecting layer

R. Lopez, L. A. Boatner, T. E. Haynes, R. F. Haglund, Leonard C Feldman

Research output: Contribution to journalArticle

42 Citations (Scopus)

Abstract

The production of near-surface nanocomposites with a thermally variable reflectivity on single crystal Si using ion beams and thermal processing was presented. Stoichiometric coimplantation of vanadium and oxygen ions and subsequent thermal processing were employed to form embedded VO 2 nanoparticles in the SiO 2 film. It was observed that the reflectivity of the vanadium dioxide particles underwent a large changes at the VO 2 semiconductor-to-metal phase transition. The reflectivity of the vanadium dioxide particles which underwent large changes provide a mechanism for thermally controlling the reflectivity of the VO 2/SiO 2/Si layer and effectively, the Si crystal surface.

Original languageEnglish
Pages (from-to)1410-1412
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number8
DOIs
Publication statusPublished - Aug 23 2004

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vanadium
reflectance
composite materials
silicon
dioxides
oxygen ions
crystal surfaces
nanocomposites
ion beams
nanoparticles
single crystals
metals
ions

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Switchable reflectivity on silicon from a composite VO 2-SiO 2 protecting layer. / Lopez, R.; Boatner, L. A.; Haynes, T. E.; Haglund, R. F.; Feldman, Leonard C.

In: Applied Physics Letters, Vol. 85, No. 8, 23.08.2004, p. 1410-1412.

Research output: Contribution to journalArticle

Lopez, R. ; Boatner, L. A. ; Haynes, T. E. ; Haglund, R. F. ; Feldman, Leonard C. / Switchable reflectivity on silicon from a composite VO 2-SiO 2 protecting layer. In: Applied Physics Letters. 2004 ; Vol. 85, No. 8. pp. 1410-1412.
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