Abstract
The production of near-surface nanocomposites with a thermally variable reflectivity on single crystal Si using ion beams and thermal processing was presented. Stoichiometric coimplantation of vanadium and oxygen ions and subsequent thermal processing were employed to form embedded VO 2 nanoparticles in the SiO 2 film. It was observed that the reflectivity of the vanadium dioxide particles underwent a large changes at the VO 2 semiconductor-to-metal phase transition. The reflectivity of the vanadium dioxide particles which underwent large changes provide a mechanism for thermally controlling the reflectivity of the VO 2/SiO 2/Si layer and effectively, the Si crystal surface.
| Original language | English |
|---|---|
| Pages (from-to) | 1410-1412 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 85 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - Aug 23 2004 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Lopez, R., Boatner, L. A., Haynes, T. E., Haglund, R. F., & Feldman, L. C. (2004). Switchable reflectivity on silicon from a composite VO 2-SiO 2 protecting layer. Applied Physics Letters, 85(8), 1410-1412. https://doi.org/10.1063/1.1784546