Switchable reflectivity on silicon from a composite VO 2-SiO 2 protecting layer

R. Lopez; L. A. Boatner; T. E. Haynes; R. F. Haglund; L. C. Feldman

doi:10.1063/1.1784546

Switchable reflectivity on silicon from a composite VO ₂-SiO ₂ protecting layer

R. Lopez, L. A. Boatner, T. E. Haynes, R. F. Haglund, L. C. Feldman

Rutgers University

Research output: Contribution to journal › Article › peer-review

43 Citations (Scopus)

Abstract

The production of near-surface nanocomposites with a thermally variable reflectivity on single crystal Si using ion beams and thermal processing was presented. Stoichiometric coimplantation of vanadium and oxygen ions and subsequent thermal processing were employed to form embedded VO ₂ nanoparticles in the SiO ₂ film. It was observed that the reflectivity of the vanadium dioxide particles underwent a large changes at the VO ₂ semiconductor-to-metal phase transition. The reflectivity of the vanadium dioxide particles which underwent large changes provide a mechanism for thermally controlling the reflectivity of the VO ₂/SiO ₂/Si layer and effectively, the Si crystal surface.

Original language	English
Pages (from-to)	1410-1412
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	8
DOIs	https://doi.org/10.1063/1.1784546
Publication status	Published - Aug 23 2004

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{6a2d8c621e26468ca8c533731e5841c0,

title = "Switchable reflectivity on silicon from a composite VO 2-SiO 2 protecting layer",

abstract = "The production of near-surface nanocomposites with a thermally variable reflectivity on single crystal Si using ion beams and thermal processing was presented. Stoichiometric coimplantation of vanadium and oxygen ions and subsequent thermal processing were employed to form embedded VO 2 nanoparticles in the SiO 2 film. It was observed that the reflectivity of the vanadium dioxide particles underwent a large changes at the VO 2 semiconductor-to-metal phase transition. The reflectivity of the vanadium dioxide particles which underwent large changes provide a mechanism for thermally controlling the reflectivity of the VO 2/SiO 2/Si layer and effectively, the Si crystal surface.",

author = "R. Lopez and Boatner, {L. A.} and Haynes, {T. E.} and Haglund, {R. F.} and Feldman, {L. C.}",

note = "Funding Information: The authors thank Pam H. Fleming for providing the oxidized silicon wafer samples and the staff at the former Surface Modification and Characterization Research Facility at ORNL for their technical support. This research was supported in part by the Office of Science, U.S. Department of Energy through a grant to Vanderbilt University (NSET Grant No. DE-FG02-01-ER45916) and by the Laboratory Directed Research and Development Program of Oak Ridge National Laboratory, which is managed by UT-Battelle, LLC, for the U.S. Department of Energy under Contract No. DE-AC05-00OR22725.",

year = "2004",

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doi = "10.1063/1.1784546",

language = "English",

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AU - Lopez, R.

AU - Boatner, L. A.

AU - Haynes, T. E.

AU - Haglund, R. F.

AU - Feldman, L. C.

N1 - Funding Information: The authors thank Pam H. Fleming for providing the oxidized silicon wafer samples and the staff at the former Surface Modification and Characterization Research Facility at ORNL for their technical support. This research was supported in part by the Office of Science, U.S. Department of Energy through a grant to Vanderbilt University (NSET Grant No. DE-FG02-01-ER45916) and by the Laboratory Directed Research and Development Program of Oak Ridge National Laboratory, which is managed by UT-Battelle, LLC, for the U.S. Department of Energy under Contract No. DE-AC05-00OR22725.

PY - 2004/8/23

Y1 - 2004/8/23

N2 - The production of near-surface nanocomposites with a thermally variable reflectivity on single crystal Si using ion beams and thermal processing was presented. Stoichiometric coimplantation of vanadium and oxygen ions and subsequent thermal processing were employed to form embedded VO 2 nanoparticles in the SiO 2 film. It was observed that the reflectivity of the vanadium dioxide particles underwent a large changes at the VO 2 semiconductor-to-metal phase transition. The reflectivity of the vanadium dioxide particles which underwent large changes provide a mechanism for thermally controlling the reflectivity of the VO 2/SiO 2/Si layer and effectively, the Si crystal surface.

AB - The production of near-surface nanocomposites with a thermally variable reflectivity on single crystal Si using ion beams and thermal processing was presented. Stoichiometric coimplantation of vanadium and oxygen ions and subsequent thermal processing were employed to form embedded VO 2 nanoparticles in the SiO 2 film. It was observed that the reflectivity of the vanadium dioxide particles underwent a large changes at the VO 2 semiconductor-to-metal phase transition. The reflectivity of the vanadium dioxide particles which underwent large changes provide a mechanism for thermally controlling the reflectivity of the VO 2/SiO 2/Si layer and effectively, the Si crystal surface.

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