Switchable reflectivity on silicon from a composite VO 2-SiO 2 protecting layer

R. Lopez; L. A. Boatner; T. E. Haynes; R. F. Haglund; L. C. Feldman

doi:10.1063/1.1784546

Switchable reflectivity on silicon from a composite VO ₂-SiO ₂ protecting layer

R. Lopez, L. A. Boatner, T. E. Haynes, R. F. Haglund, L. C. Feldman

Rutgers University

Research output: Contribution to journal › Article › peer-review

43 Citations (Scopus)

Abstract

The production of near-surface nanocomposites with a thermally variable reflectivity on single crystal Si using ion beams and thermal processing was presented. Stoichiometric coimplantation of vanadium and oxygen ions and subsequent thermal processing were employed to form embedded VO ₂ nanoparticles in the SiO ₂ film. It was observed that the reflectivity of the vanadium dioxide particles underwent a large changes at the VO ₂ semiconductor-to-metal phase transition. The reflectivity of the vanadium dioxide particles which underwent large changes provide a mechanism for thermally controlling the reflectivity of the VO ₂/SiO ₂/Si layer and effectively, the Si crystal surface.

Original language	English
Pages (from-to)	1410-1412
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	8
DOIs	https://doi.org/10.1063/1.1784546
Publication status	Published - Aug 23 2004

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1784546

Fingerprint Dive into the research topics of 'Switchable reflectivity on silicon from a composite VO <sub>2</sub>-SiO <sub>2</sub> protecting layer'. Together they form a unique fingerprint.

Cite this

@article{6a2d8c621e26468ca8c533731e5841c0,

title = "Switchable reflectivity on silicon from a composite VO 2-SiO 2 protecting layer",

abstract = "The production of near-surface nanocomposites with a thermally variable reflectivity on single crystal Si using ion beams and thermal processing was presented. Stoichiometric coimplantation of vanadium and oxygen ions and subsequent thermal processing were employed to form embedded VO 2 nanoparticles in the SiO 2 film. It was observed that the reflectivity of the vanadium dioxide particles underwent a large changes at the VO 2 semiconductor-to-metal phase transition. The reflectivity of the vanadium dioxide particles which underwent large changes provide a mechanism for thermally controlling the reflectivity of the VO 2/SiO 2/Si layer and effectively, the Si crystal surface.",

author = "R. Lopez and Boatner, {L. A.} and Haynes, {T. E.} and Haglund, {R. F.} and Feldman, {L. C.}",

year = "2004",

month = aug,

day = "23",

doi = "10.1063/1.1784546",

language = "English",

volume = "85",

pages = "1410--1412",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "8",

}

TY - JOUR

T1 - Switchable reflectivity on silicon from a composite VO 2-SiO 2 protecting layer

AU - Lopez, R.

AU - Boatner, L. A.

AU - Haynes, T. E.

AU - Haglund, R. F.

AU - Feldman, L. C.

PY - 2004/8/23

Y1 - 2004/8/23

N2 - The production of near-surface nanocomposites with a thermally variable reflectivity on single crystal Si using ion beams and thermal processing was presented. Stoichiometric coimplantation of vanadium and oxygen ions and subsequent thermal processing were employed to form embedded VO 2 nanoparticles in the SiO 2 film. It was observed that the reflectivity of the vanadium dioxide particles underwent a large changes at the VO 2 semiconductor-to-metal phase transition. The reflectivity of the vanadium dioxide particles which underwent large changes provide a mechanism for thermally controlling the reflectivity of the VO 2/SiO 2/Si layer and effectively, the Si crystal surface.

AB - The production of near-surface nanocomposites with a thermally variable reflectivity on single crystal Si using ion beams and thermal processing was presented. Stoichiometric coimplantation of vanadium and oxygen ions and subsequent thermal processing were employed to form embedded VO 2 nanoparticles in the SiO 2 film. It was observed that the reflectivity of the vanadium dioxide particles underwent a large changes at the VO 2 semiconductor-to-metal phase transition. The reflectivity of the vanadium dioxide particles which underwent large changes provide a mechanism for thermally controlling the reflectivity of the VO 2/SiO 2/Si layer and effectively, the Si crystal surface.

UR - http://www.scopus.com/inward/record.url?scp=4544280148&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4544280148&partnerID=8YFLogxK

U2 - 10.1063/1.1784546

DO - 10.1063/1.1784546

M3 - Article

AN - SCOPUS:4544280148

VL - 85

SP - 1410

EP - 1412

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 8

ER -