Switchable reflectivity on silicon from a composite VO 2-SiO 2 protecting layer

R. Lopez; L. A. Boatner; T. E. Haynes; R. F. Haglund; L. C. Feldman

doi:10.1063/1.1784546

Switchable reflectivity on silicon from a composite VO ₂-SiO ₂ protecting layer

R. Lopez, L. A. Boatner, T. E. Haynes, R. F. Haglund, L. C. Feldman

Rutgers University

Research output: Contribution to journal › Article

43 Citations (Scopus)

Abstract

The production of near-surface nanocomposites with a thermally variable reflectivity on single crystal Si using ion beams and thermal processing was presented. Stoichiometric coimplantation of vanadium and oxygen ions and subsequent thermal processing were employed to form embedded VO ₂ nanoparticles in the SiO ₂ film. It was observed that the reflectivity of the vanadium dioxide particles underwent a large changes at the VO ₂ semiconductor-to-metal phase transition. The reflectivity of the vanadium dioxide particles which underwent large changes provide a mechanism for thermally controlling the reflectivity of the VO ₂/SiO ₂/Si layer and effectively, the Si crystal surface.

Original language	English
Pages (from-to)	1410-1412
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	8
DOIs	https://doi.org/10.1063/1.1784546
Publication status	Published - Aug 23 2004

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ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Cite this

Lopez, R., Boatner, L. A., Haynes, T. E., Haglund, R. F., & Feldman, L. C. (2004). Switchable reflectivity on silicon from a composite VO ₂-SiO ₂ protecting layer. Applied Physics Letters, 85(8), 1410-1412. https://doi.org/10.1063/1.1784546

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10.1063/1.1784546