Synergistic approach to high-performance oxide thin film transistors using a bilayer channel architecture

Xinge Yu, Nanjia Zhou, Jeremy Smith, Hui Lin, Katie Stallings, Junsheng Yu, Tobin J Marks, Antonio Facchetti

Research output: Contribution to journalArticle

44 Citations (Scopus)

Abstract

We report here a bilayer metal oxide thin film transistor concept (bMO TFT) where the channel has the structure: dielectric/semiconducting indium oxide (In2O3) layer/semiconducting indium gallium oxide (IGO) layer. Both semiconducting layers are grown from solution via a low-temperature combustion process. The TFT mobilities of bottom-gate/top-contact bMO TFTs processed at T = 250 C are ∼5tmex larger (∼2.6 cm2/(V s)) than those of single-layer IGO TFTs (∼0.5 cm2/(V s)), reaching values comparable to single-layer combustion-processed In2O 3 TFTs (∼3.2 cm2/(V s)). More importantly, and unlike single-layer In2O3 TFTs, the threshold voltage of the bMO TFTs is ∼0.0 V, and the current on/off ratio is significantly enhanced to ∼1 × 108 (vs ∼1 × 104 for In 2O3). The microstructure and morphology of the In 2O3/IGO bilayers are analyzed by X-ray diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, and transmission electron microscopy, revealing the polycrystalline nature of the In2O 3 layer and the amorphous nature of the IGO layer. This work demonstrates that solution-processed metal oxides can be implemented in bilayer TFT architectures with significantly enhanced performance.

Original languageEnglish
Pages (from-to)7983-7988
Number of pages6
JournalACS Applied Materials and Interfaces
Volume5
Issue number16
DOIs
Publication statusPublished - Aug 28 2013

Fingerprint

Thin film transistors
Semiconducting indium
Oxides
Indium
Oxide films
Gallium
Metals
Photoelectron Spectroscopy
Threshold voltage
Atomic Force Microscopy
Atomic force microscopy
Transmission Electron Microscopy
X ray photoelectron spectroscopy
X-Ray Diffraction
Transmission electron microscopy
X ray diffraction
Microstructure
gallium oxide
indium oxide
Temperature

Keywords

  • bilayer structure
  • indium gallium oxide
  • indium oxide
  • thin film transistor (TFT)

ASJC Scopus subject areas

  • Materials Science(all)
  • Medicine(all)

Cite this

Synergistic approach to high-performance oxide thin film transistors using a bilayer channel architecture. / Yu, Xinge; Zhou, Nanjia; Smith, Jeremy; Lin, Hui; Stallings, Katie; Yu, Junsheng; Marks, Tobin J; Facchetti, Antonio.

In: ACS Applied Materials and Interfaces, Vol. 5, No. 16, 28.08.2013, p. 7983-7988.

Research output: Contribution to journalArticle

Yu, Xinge ; Zhou, Nanjia ; Smith, Jeremy ; Lin, Hui ; Stallings, Katie ; Yu, Junsheng ; Marks, Tobin J ; Facchetti, Antonio. / Synergistic approach to high-performance oxide thin film transistors using a bilayer channel architecture. In: ACS Applied Materials and Interfaces. 2013 ; Vol. 5, No. 16. pp. 7983-7988.
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