Synergistic Boron Doping of Semiconductor and Dielectric Layers for High-Performance Metal Oxide Transistors

Interplay of Experiment and Theory

Xinan Zhang, Binghao Wang, Wei Huang, Yao Chen, Gang Wang, Li Zeng, Weigang Zhu, Michael J. Bedzyk, Weifeng Zhang, Julia E. Medvedeva, Antonio Facchetti, Tobin J Marks

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We report the results of a study to enhance metal oxide (MO) thin-film transistor (TFT) performance by doping both the semiconductor (In2O3) and gate dielectric (Al2O3) layers with boron (yielding IBO and ABO, respectively) and provide the first quantitative analysis of how B doping affects charge transport in these MO dielectric and semiconducting matrices. The impact of 1-9 atom % B doping on MO microstructure, morphology, oxygen defects, charge transport, and dielectric properties is analyzed together, in detail, by complementary experimental (microstructural, electrical) and theoretical (ab initio MD, DFT) methods. The results indicate that B doping frustrates In2O3 crystallization while suppressing defects responsible for electron trapping and carrier generation. In the adjacent Al2O3 dielectric, B doping increases the dielectric constant and refractive index while reducing leakage currents. Furthermore, optimized solution-processed TFTs combining IBO channels with 6 atom % B and ABO dielectrics with 10 atom % B exhibit field effect mobilities as high as 11 cm2 V-1 s-1, current on/off ratios >105, threshold voltages = 0.6 V, and superior bias stress durability.

Original languageEnglish
Pages (from-to)12501-12510
Number of pages10
JournalJournal of the American Chemical Society
Volume140
Issue number39
DOIs
Publication statusPublished - Oct 3 2018

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Semiconductors
Boron
Oxides
Transistors
Metals
Doping (additives)
Semiconductor materials
Refractometry
Experiments
Atoms
Charge transfer
Crystallization
Defects
Electrons
Oxygen
Gate dielectrics
Thin film transistors
Threshold voltage
Discrete Fourier transforms
Leakage currents

ASJC Scopus subject areas

  • Catalysis
  • Chemistry(all)
  • Biochemistry
  • Colloid and Surface Chemistry

Cite this

Synergistic Boron Doping of Semiconductor and Dielectric Layers for High-Performance Metal Oxide Transistors : Interplay of Experiment and Theory. / Zhang, Xinan; Wang, Binghao; Huang, Wei; Chen, Yao; Wang, Gang; Zeng, Li; Zhu, Weigang; Bedzyk, Michael J.; Zhang, Weifeng; Medvedeva, Julia E.; Facchetti, Antonio; Marks, Tobin J.

In: Journal of the American Chemical Society, Vol. 140, No. 39, 03.10.2018, p. 12501-12510.

Research output: Contribution to journalArticle

Zhang, X, Wang, B, Huang, W, Chen, Y, Wang, G, Zeng, L, Zhu, W, Bedzyk, MJ, Zhang, W, Medvedeva, JE, Facchetti, A & Marks, TJ 2018, 'Synergistic Boron Doping of Semiconductor and Dielectric Layers for High-Performance Metal Oxide Transistors: Interplay of Experiment and Theory', Journal of the American Chemical Society, vol. 140, no. 39, pp. 12501-12510. https://doi.org/10.1021/jacs.8b06395
Zhang, Xinan ; Wang, Binghao ; Huang, Wei ; Chen, Yao ; Wang, Gang ; Zeng, Li ; Zhu, Weigang ; Bedzyk, Michael J. ; Zhang, Weifeng ; Medvedeva, Julia E. ; Facchetti, Antonio ; Marks, Tobin J. / Synergistic Boron Doping of Semiconductor and Dielectric Layers for High-Performance Metal Oxide Transistors : Interplay of Experiment and Theory. In: Journal of the American Chemical Society. 2018 ; Vol. 140, No. 39. pp. 12501-12510.
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