Synthesis and characterization of aluminum borate (Al18B 4O33, Al4B2O9) nanowires and nanotubes

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Abstract

Single crystal aluminum borate, including Al18B 4O33 and Al4B2O9, nanowires and nanotubes have been synthesized on sapphire substrates covered by NiB powder, Pt powder and Al films. For NiB powder covered sapphire substrates, Al18B4O33 nanowires and nanotubes are formed by heating the substrates at 1100 °C under Ar gas flow. For Pt powder covered sapphire substrates, Al18B4O33 nanowires and nanotubes are produced by a chemical vapor deposition (CVD) method using boron triiodide and boric acid (BI3/H3BO 3) vapor with Ar gas as precursor at 1000 °C. The nanowires are several micrometers long with diameters ranging from 50 to 200 nm, while the diameters of the nanotubes are usually larger than 200 nm. For Al film covered sapphire substrates, Al4B2O9 nanowires and nanotubes are synthesized by the CVD method using boron triiodide (BI 3) vapor with Ar gas as precursor at 750-850 °C. The size of the nanostructures can be manipulated by the growth time, the growth temperature, the BI3 vapor concentration, and the Al film thickness. The nanostructure diameter and length can be varied in the range of 10-500 nm and 300 nm-2 μm, respectively. All the nanostructures have been characterized by scanning electron microscope (SEM), X-ray diffraction (XRD), transmission electron microscope (TEM), selected area electron diffraction (SAD), electron energy-loss spectrometry (EELS) and X-ray energy-dispersive spectrometry (XEDS). The growth mechanism of the aluminum borate nanowires and nanotubes is discussed.

Original languageEnglish
Pages (from-to)23-30
Number of pages8
JournalMaterials Chemistry and Physics
Volume97
Issue number1
DOIs
Publication statusPublished - May 10 2006

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Borates
borates
Aluminum
Nanotubes
Nanowires
nanotubes
nanowires
Aluminum Oxide
aluminum
Sapphire
Powders
sapphire
synthesis
Substrates
Nanostructures
Boron
Vapors
vapors
Chemical vapor deposition
boron

Keywords

  • Chemical vapor deposition
  • Electron energy loss spectroscopy (EELS)
  • Electron microscopy (TEM and SEM)
  • Nanostructures

ASJC Scopus subject areas

  • Materials Chemistry

Cite this

Synthesis and characterization of aluminum borate (Al18B 4O33, Al4B2O9) nanowires and nanotubes. / Li, Yan; Chang, Robert P. H.

In: Materials Chemistry and Physics, Vol. 97, No. 1, 10.05.2006, p. 23-30.

Research output: Contribution to journalArticle

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abstract = "Single crystal aluminum borate, including Al18B 4O33 and Al4B2O9, nanowires and nanotubes have been synthesized on sapphire substrates covered by NiB powder, Pt powder and Al films. For NiB powder covered sapphire substrates, Al18B4O33 nanowires and nanotubes are formed by heating the substrates at 1100 °C under Ar gas flow. For Pt powder covered sapphire substrates, Al18B4O33 nanowires and nanotubes are produced by a chemical vapor deposition (CVD) method using boron triiodide and boric acid (BI3/H3BO 3) vapor with Ar gas as precursor at 1000 °C. The nanowires are several micrometers long with diameters ranging from 50 to 200 nm, while the diameters of the nanotubes are usually larger than 200 nm. For Al film covered sapphire substrates, Al4B2O9 nanowires and nanotubes are synthesized by the CVD method using boron triiodide (BI 3) vapor with Ar gas as precursor at 750-850 °C. The size of the nanostructures can be manipulated by the growth time, the growth temperature, the BI3 vapor concentration, and the Al film thickness. The nanostructure diameter and length can be varied in the range of 10-500 nm and 300 nm-2 μm, respectively. All the nanostructures have been characterized by scanning electron microscope (SEM), X-ray diffraction (XRD), transmission electron microscope (TEM), selected area electron diffraction (SAD), electron energy-loss spectrometry (EELS) and X-ray energy-dispersive spectrometry (XEDS). The growth mechanism of the aluminum borate nanowires and nanotubes is discussed.",
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AB - Single crystal aluminum borate, including Al18B 4O33 and Al4B2O9, nanowires and nanotubes have been synthesized on sapphire substrates covered by NiB powder, Pt powder and Al films. For NiB powder covered sapphire substrates, Al18B4O33 nanowires and nanotubes are formed by heating the substrates at 1100 °C under Ar gas flow. For Pt powder covered sapphire substrates, Al18B4O33 nanowires and nanotubes are produced by a chemical vapor deposition (CVD) method using boron triiodide and boric acid (BI3/H3BO 3) vapor with Ar gas as precursor at 1000 °C. The nanowires are several micrometers long with diameters ranging from 50 to 200 nm, while the diameters of the nanotubes are usually larger than 200 nm. For Al film covered sapphire substrates, Al4B2O9 nanowires and nanotubes are synthesized by the CVD method using boron triiodide (BI 3) vapor with Ar gas as precursor at 750-850 °C. The size of the nanostructures can be manipulated by the growth time, the growth temperature, the BI3 vapor concentration, and the Al film thickness. The nanostructure diameter and length can be varied in the range of 10-500 nm and 300 nm-2 μm, respectively. All the nanostructures have been characterized by scanning electron microscope (SEM), X-ray diffraction (XRD), transmission electron microscope (TEM), selected area electron diffraction (SAD), electron energy-loss spectrometry (EELS) and X-ray energy-dispersive spectrometry (XEDS). The growth mechanism of the aluminum borate nanowires and nanotubes is discussed.

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