Synthesis and characterization of low-melting, highly volatile magnesium MOCVD precursors and their implementation in MgO thin film growth

Lian Wang, Yu Yang, Jun Ni, Charlotte L. Stern, Tobin J Marks

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

A series of low-melting, highly volatile, and thermally/air stable diamine-coordinated magnesium metal-organic chemical vapor deposition (MOCVD) precursors, Mg(hfa) 2(diamine) and Mg(hfa) 3H(diamine) (hfa = 1,1,1,5,5,5-hexafluoro-2,4-pentanedionate), has been synthesized in a single-step aqueous reaction under ambient conditions, and the molecular structures have been determined by single-crystal X-ray diffraction. These fluorocarbon-bearing magnesium complexes exhibit significantly lower melting points and higher volatilities than most previously reported magnesium precursors for MgO thin film growth. One complex of the series, bis(1,1,1,5,5,5-hexafluoro-2,4-pentanedionato)(N,N,N′, N′-tetramethylethyl-enediamine)magnesium(II), with a low melting point (61°C) and excellent volatility, was successfully implemented in MgO thin film growth by MOCVD. Phase-pure MgO thin films were deposited on Corning 1737F glass, single-crystal Si, and single-crystal SrTiO 3(100) and -(110), over the temperature range 550-675°C. It is demonstrated that highly (100)-oriented MgO films can be obtained on amorphous glass (X-ray diffraction fwhm = 3.1°). Compared to films on glass, epitaxial MgO thin films on both SrTiO 3 substrates exhibit excellent out-of-plane alignment (fwhm = 0.7 and 0.9°) and good in-plane alignment. The microstructures, surface morphologies, and optical properties of the MgO thin films were also investigated as a function of growth temperature.

Original languageEnglish
Pages (from-to)5697-5704
Number of pages8
JournalChemistry of Materials
Volume17
Issue number23
DOIs
Publication statusPublished - Nov 15 2005

Fingerprint

Organic Chemicals
Organic chemicals
Film growth
Magnesium
Chemical vapor deposition
Melting
Metals
Diamines
Thin films
Single crystals
Glass
Melting point
Bearings (structural)
Fluorocarbons
X ray diffraction
Epitaxial films
Growth temperature
Molecular structure
Surface morphology
Optical properties

ASJC Scopus subject areas

  • Materials Chemistry
  • Materials Science(all)

Cite this

Synthesis and characterization of low-melting, highly volatile magnesium MOCVD precursors and their implementation in MgO thin film growth. / Wang, Lian; Yang, Yu; Ni, Jun; Stern, Charlotte L.; Marks, Tobin J.

In: Chemistry of Materials, Vol. 17, No. 23, 15.11.2005, p. 5697-5704.

Research output: Contribution to journalArticle

@article{1ed48c7d6a0b4153b1047ccc7913c090,
title = "Synthesis and characterization of low-melting, highly volatile magnesium MOCVD precursors and their implementation in MgO thin film growth",
abstract = "A series of low-melting, highly volatile, and thermally/air stable diamine-coordinated magnesium metal-organic chemical vapor deposition (MOCVD) precursors, Mg(hfa) 2(diamine) and Mg(hfa) 3H(diamine) (hfa = 1,1,1,5,5,5-hexafluoro-2,4-pentanedionate), has been synthesized in a single-step aqueous reaction under ambient conditions, and the molecular structures have been determined by single-crystal X-ray diffraction. These fluorocarbon-bearing magnesium complexes exhibit significantly lower melting points and higher volatilities than most previously reported magnesium precursors for MgO thin film growth. One complex of the series, bis(1,1,1,5,5,5-hexafluoro-2,4-pentanedionato)(N,N,N′, N′-tetramethylethyl-enediamine)magnesium(II), with a low melting point (61°C) and excellent volatility, was successfully implemented in MgO thin film growth by MOCVD. Phase-pure MgO thin films were deposited on Corning 1737F glass, single-crystal Si, and single-crystal SrTiO 3(100) and -(110), over the temperature range 550-675°C. It is demonstrated that highly (100)-oriented MgO films can be obtained on amorphous glass (X-ray diffraction fwhm = 3.1°). Compared to films on glass, epitaxial MgO thin films on both SrTiO 3 substrates exhibit excellent out-of-plane alignment (fwhm = 0.7 and 0.9°) and good in-plane alignment. The microstructures, surface morphologies, and optical properties of the MgO thin films were also investigated as a function of growth temperature.",
author = "Lian Wang and Yu Yang and Jun Ni and Stern, {Charlotte L.} and Marks, {Tobin J}",
year = "2005",
month = "11",
day = "15",
doi = "10.1021/cm0512528",
language = "English",
volume = "17",
pages = "5697--5704",
journal = "Chemistry of Materials",
issn = "0897-4756",
publisher = "American Chemical Society",
number = "23",

}

TY - JOUR

T1 - Synthesis and characterization of low-melting, highly volatile magnesium MOCVD precursors and their implementation in MgO thin film growth

AU - Wang, Lian

AU - Yang, Yu

AU - Ni, Jun

AU - Stern, Charlotte L.

AU - Marks, Tobin J

PY - 2005/11/15

Y1 - 2005/11/15

N2 - A series of low-melting, highly volatile, and thermally/air stable diamine-coordinated magnesium metal-organic chemical vapor deposition (MOCVD) precursors, Mg(hfa) 2(diamine) and Mg(hfa) 3H(diamine) (hfa = 1,1,1,5,5,5-hexafluoro-2,4-pentanedionate), has been synthesized in a single-step aqueous reaction under ambient conditions, and the molecular structures have been determined by single-crystal X-ray diffraction. These fluorocarbon-bearing magnesium complexes exhibit significantly lower melting points and higher volatilities than most previously reported magnesium precursors for MgO thin film growth. One complex of the series, bis(1,1,1,5,5,5-hexafluoro-2,4-pentanedionato)(N,N,N′, N′-tetramethylethyl-enediamine)magnesium(II), with a low melting point (61°C) and excellent volatility, was successfully implemented in MgO thin film growth by MOCVD. Phase-pure MgO thin films were deposited on Corning 1737F glass, single-crystal Si, and single-crystal SrTiO 3(100) and -(110), over the temperature range 550-675°C. It is demonstrated that highly (100)-oriented MgO films can be obtained on amorphous glass (X-ray diffraction fwhm = 3.1°). Compared to films on glass, epitaxial MgO thin films on both SrTiO 3 substrates exhibit excellent out-of-plane alignment (fwhm = 0.7 and 0.9°) and good in-plane alignment. The microstructures, surface morphologies, and optical properties of the MgO thin films were also investigated as a function of growth temperature.

AB - A series of low-melting, highly volatile, and thermally/air stable diamine-coordinated magnesium metal-organic chemical vapor deposition (MOCVD) precursors, Mg(hfa) 2(diamine) and Mg(hfa) 3H(diamine) (hfa = 1,1,1,5,5,5-hexafluoro-2,4-pentanedionate), has been synthesized in a single-step aqueous reaction under ambient conditions, and the molecular structures have been determined by single-crystal X-ray diffraction. These fluorocarbon-bearing magnesium complexes exhibit significantly lower melting points and higher volatilities than most previously reported magnesium precursors for MgO thin film growth. One complex of the series, bis(1,1,1,5,5,5-hexafluoro-2,4-pentanedionato)(N,N,N′, N′-tetramethylethyl-enediamine)magnesium(II), with a low melting point (61°C) and excellent volatility, was successfully implemented in MgO thin film growth by MOCVD. Phase-pure MgO thin films were deposited on Corning 1737F glass, single-crystal Si, and single-crystal SrTiO 3(100) and -(110), over the temperature range 550-675°C. It is demonstrated that highly (100)-oriented MgO films can be obtained on amorphous glass (X-ray diffraction fwhm = 3.1°). Compared to films on glass, epitaxial MgO thin films on both SrTiO 3 substrates exhibit excellent out-of-plane alignment (fwhm = 0.7 and 0.9°) and good in-plane alignment. The microstructures, surface morphologies, and optical properties of the MgO thin films were also investigated as a function of growth temperature.

UR - http://www.scopus.com/inward/record.url?scp=28044471200&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=28044471200&partnerID=8YFLogxK

U2 - 10.1021/cm0512528

DO - 10.1021/cm0512528

M3 - Article

AN - SCOPUS:28044471200

VL - 17

SP - 5697

EP - 5704

JO - Chemistry of Materials

JF - Chemistry of Materials

SN - 0897-4756

IS - 23

ER -