Synthesis and characterization of volatile, fluorine-free β-ketoiminate lanthanide MOCVD precursors and their implementation in low-temperature growth of epitaxial CeO2 buffer layers for superconducting electronics

Nikki L. Edleman, Anchuan Wang, John A. Belot, Andrew W. Metz, Jason R. Babcock, Amber M. Kawaoka, Jun Ni, Matthew V. Metz, Christine J. Flaschenriem, Charlotte L. Stern, Louise M. Liable-Sands, Arnold L. Rheingold, Paul R. Markworth, Robert P. H. Chang, Michael P. Chudzik, Carl R. Kannewurf, Tobin J Marks

Research output: Contribution to journalArticle

51 Citations (Scopus)

Abstract

A new class of volatile, low-melting, fluorine-free lanthanide metal-organic chemical vapor deposition (MOCVD) precursors has been developed. The neutral, monomeric Ce, Nd, Gd, and Er complexes are coordinatively saturated by a versatile, multidentate ether-functionalized β-ketoiminato ligand series, the melting point and volatility characteristics of which can be tuned by altering the alkyl substituents on the keto, imino, and ether sites of the ligand. Direct comparison with conventional lanthanide β-diketonate complexes reveals that the present precursor class is a superior choice for lanthanide oxide MOCVD. Epitaxial CeO2 buffer layer films can be grown on (001) YSZ substrates by MOCVD at significantly lower temperatures (450-650 °C) than previously possible by using one of the newly developed cerium β-ketoiminate precursors. Films deposited at 540 °C have good out-of-plane (Δω = 0.85°) and in-plane (Δφ = 1.65°) alignment and smooth surfaces (rms roughness ∼ 4.3 Å). The film growth rate decreases and the films tend to be smoother as the deposition temperature is increased. High-quality yttrium barium copper oxide (YBCO) films grown on these CeO2 buffer layers by pulsed organometallic molecular beam epitaxy exhibit very good electrical transport properties (Tc = 86.5 K, Jc = 1.08 x 106 A/cm2 at 77.4 K).

Original languageEnglish
Pages (from-to)5005-5023
Number of pages19
JournalInorganic Chemistry
Volume41
Issue number20
DOIs
Publication statusPublished - Oct 7 2002

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Organic Chemicals
Lanthanoid Series Elements
Fluorine
Growth temperature
Buffer layers
metalorganic chemical vapor deposition
fluorine
Chemical vapor deposition
Electronic equipment
buffers
Metals
Ether
Yttrium barium copper oxides
synthesis
electronics
Ligands
Cerium
ethers
Organometallics
Film growth

ASJC Scopus subject areas

  • Inorganic Chemistry

Cite this

Synthesis and characterization of volatile, fluorine-free β-ketoiminate lanthanide MOCVD precursors and their implementation in low-temperature growth of epitaxial CeO2 buffer layers for superconducting electronics. / Edleman, Nikki L.; Wang, Anchuan; Belot, John A.; Metz, Andrew W.; Babcock, Jason R.; Kawaoka, Amber M.; Ni, Jun; Metz, Matthew V.; Flaschenriem, Christine J.; Stern, Charlotte L.; Liable-Sands, Louise M.; Rheingold, Arnold L.; Markworth, Paul R.; Chang, Robert P. H.; Chudzik, Michael P.; Kannewurf, Carl R.; Marks, Tobin J.

In: Inorganic Chemistry, Vol. 41, No. 20, 07.10.2002, p. 5005-5023.

Research output: Contribution to journalArticle

Edleman, NL, Wang, A, Belot, JA, Metz, AW, Babcock, JR, Kawaoka, AM, Ni, J, Metz, MV, Flaschenriem, CJ, Stern, CL, Liable-Sands, LM, Rheingold, AL, Markworth, PR, Chang, RPH, Chudzik, MP, Kannewurf, CR & Marks, TJ 2002, 'Synthesis and characterization of volatile, fluorine-free β-ketoiminate lanthanide MOCVD precursors and their implementation in low-temperature growth of epitaxial CeO2 buffer layers for superconducting electronics', Inorganic Chemistry, vol. 41, no. 20, pp. 5005-5023. https://doi.org/10.1021/ic020299h
Edleman, Nikki L. ; Wang, Anchuan ; Belot, John A. ; Metz, Andrew W. ; Babcock, Jason R. ; Kawaoka, Amber M. ; Ni, Jun ; Metz, Matthew V. ; Flaschenriem, Christine J. ; Stern, Charlotte L. ; Liable-Sands, Louise M. ; Rheingold, Arnold L. ; Markworth, Paul R. ; Chang, Robert P. H. ; Chudzik, Michael P. ; Kannewurf, Carl R. ; Marks, Tobin J. / Synthesis and characterization of volatile, fluorine-free β-ketoiminate lanthanide MOCVD precursors and their implementation in low-temperature growth of epitaxial CeO2 buffer layers for superconducting electronics. In: Inorganic Chemistry. 2002 ; Vol. 41, No. 20. pp. 5005-5023.
@article{dc5cc185cf074c5cb6a4785c0ee03b1d,
title = "Synthesis and characterization of volatile, fluorine-free β-ketoiminate lanthanide MOCVD precursors and their implementation in low-temperature growth of epitaxial CeO2 buffer layers for superconducting electronics",
abstract = "A new class of volatile, low-melting, fluorine-free lanthanide metal-organic chemical vapor deposition (MOCVD) precursors has been developed. The neutral, monomeric Ce, Nd, Gd, and Er complexes are coordinatively saturated by a versatile, multidentate ether-functionalized β-ketoiminato ligand series, the melting point and volatility characteristics of which can be tuned by altering the alkyl substituents on the keto, imino, and ether sites of the ligand. Direct comparison with conventional lanthanide β-diketonate complexes reveals that the present precursor class is a superior choice for lanthanide oxide MOCVD. Epitaxial CeO2 buffer layer films can be grown on (001) YSZ substrates by MOCVD at significantly lower temperatures (450-650 °C) than previously possible by using one of the newly developed cerium β-ketoiminate precursors. Films deposited at 540 °C have good out-of-plane (Δω = 0.85°) and in-plane (Δφ = 1.65°) alignment and smooth surfaces (rms roughness ∼ 4.3 {\AA}). The film growth rate decreases and the films tend to be smoother as the deposition temperature is increased. High-quality yttrium barium copper oxide (YBCO) films grown on these CeO2 buffer layers by pulsed organometallic molecular beam epitaxy exhibit very good electrical transport properties (Tc = 86.5 K, Jc = 1.08 x 106 A/cm2 at 77.4 K).",
author = "Edleman, {Nikki L.} and Anchuan Wang and Belot, {John A.} and Metz, {Andrew W.} and Babcock, {Jason R.} and Kawaoka, {Amber M.} and Jun Ni and Metz, {Matthew V.} and Flaschenriem, {Christine J.} and Stern, {Charlotte L.} and Liable-Sands, {Louise M.} and Rheingold, {Arnold L.} and Markworth, {Paul R.} and Chang, {Robert P. H.} and Chudzik, {Michael P.} and Kannewurf, {Carl R.} and Marks, {Tobin J}",
year = "2002",
month = "10",
day = "7",
doi = "10.1021/ic020299h",
language = "English",
volume = "41",
pages = "5005--5023",
journal = "Inorganic Chemistry",
issn = "0020-1669",
publisher = "American Chemical Society",
number = "20",

}

TY - JOUR

T1 - Synthesis and characterization of volatile, fluorine-free β-ketoiminate lanthanide MOCVD precursors and their implementation in low-temperature growth of epitaxial CeO2 buffer layers for superconducting electronics

AU - Edleman, Nikki L.

AU - Wang, Anchuan

AU - Belot, John A.

AU - Metz, Andrew W.

AU - Babcock, Jason R.

AU - Kawaoka, Amber M.

AU - Ni, Jun

AU - Metz, Matthew V.

AU - Flaschenriem, Christine J.

AU - Stern, Charlotte L.

AU - Liable-Sands, Louise M.

AU - Rheingold, Arnold L.

AU - Markworth, Paul R.

AU - Chang, Robert P. H.

AU - Chudzik, Michael P.

AU - Kannewurf, Carl R.

AU - Marks, Tobin J

PY - 2002/10/7

Y1 - 2002/10/7

N2 - A new class of volatile, low-melting, fluorine-free lanthanide metal-organic chemical vapor deposition (MOCVD) precursors has been developed. The neutral, monomeric Ce, Nd, Gd, and Er complexes are coordinatively saturated by a versatile, multidentate ether-functionalized β-ketoiminato ligand series, the melting point and volatility characteristics of which can be tuned by altering the alkyl substituents on the keto, imino, and ether sites of the ligand. Direct comparison with conventional lanthanide β-diketonate complexes reveals that the present precursor class is a superior choice for lanthanide oxide MOCVD. Epitaxial CeO2 buffer layer films can be grown on (001) YSZ substrates by MOCVD at significantly lower temperatures (450-650 °C) than previously possible by using one of the newly developed cerium β-ketoiminate precursors. Films deposited at 540 °C have good out-of-plane (Δω = 0.85°) and in-plane (Δφ = 1.65°) alignment and smooth surfaces (rms roughness ∼ 4.3 Å). The film growth rate decreases and the films tend to be smoother as the deposition temperature is increased. High-quality yttrium barium copper oxide (YBCO) films grown on these CeO2 buffer layers by pulsed organometallic molecular beam epitaxy exhibit very good electrical transport properties (Tc = 86.5 K, Jc = 1.08 x 106 A/cm2 at 77.4 K).

AB - A new class of volatile, low-melting, fluorine-free lanthanide metal-organic chemical vapor deposition (MOCVD) precursors has been developed. The neutral, monomeric Ce, Nd, Gd, and Er complexes are coordinatively saturated by a versatile, multidentate ether-functionalized β-ketoiminato ligand series, the melting point and volatility characteristics of which can be tuned by altering the alkyl substituents on the keto, imino, and ether sites of the ligand. Direct comparison with conventional lanthanide β-diketonate complexes reveals that the present precursor class is a superior choice for lanthanide oxide MOCVD. Epitaxial CeO2 buffer layer films can be grown on (001) YSZ substrates by MOCVD at significantly lower temperatures (450-650 °C) than previously possible by using one of the newly developed cerium β-ketoiminate precursors. Films deposited at 540 °C have good out-of-plane (Δω = 0.85°) and in-plane (Δφ = 1.65°) alignment and smooth surfaces (rms roughness ∼ 4.3 Å). The film growth rate decreases and the films tend to be smoother as the deposition temperature is increased. High-quality yttrium barium copper oxide (YBCO) films grown on these CeO2 buffer layers by pulsed organometallic molecular beam epitaxy exhibit very good electrical transport properties (Tc = 86.5 K, Jc = 1.08 x 106 A/cm2 at 77.4 K).

UR - http://www.scopus.com/inward/record.url?scp=0037037492&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037037492&partnerID=8YFLogxK

U2 - 10.1021/ic020299h

DO - 10.1021/ic020299h

M3 - Article

VL - 41

SP - 5005

EP - 5023

JO - Inorganic Chemistry

JF - Inorganic Chemistry

SN - 0020-1669

IS - 20

ER -