Synthesis and surface chemistry of Zn3P2

Gregory M. Kimball, Nathan S. Lewis, Harry A. Atwater

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)


Zinc phosphide (Zn3P2) is a promising alternative to traditional materials (e.g. CIGS, CdTe, a-Si) for thin film photovoltaics. Open circuit voltage in Zn3P2 cells has been limited by Fermi-level pinning due to surfaces states and heterojunction interdiffusion, motivating the need to prepare interfaces that are electrically passive and chemically inert. We investigated the surface chemistry of Zn3P 2 via etching with bromine in methanol and passivation with ammonium sulfide in t-butanol. The treatment decreases surface oxidation as determined by x-ray photoelectron spectroscopy and provides a stable, low-defect interface as monitored by steady-state photoluminescence. Magnesium Schottky diodes fabricated with sulfur-passivated interfaces show evidence of enhanced barrier heights in comparison to control devices.

Original languageEnglish
Title of host publication33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
Publication statusPublished - 2008
Event33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 - San Diego, CA, United States
Duration: May 11 2008May 16 2008

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371


Other33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
CountryUnited States
CitySan Diego, CA

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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