TY - JOUR
T1 - Synthesis, characterization, and transistor response of tetrathia-[7]-helicene precursors and derivatives
AU - Kim, Choongik
AU - Marks, Tobin J.
AU - Facchetti, Antonio
AU - Schiavo, Michele
AU - Bossi, Alberto
AU - Maiorana, Stefano
AU - Licandro, Emanuela
AU - Todescato, Francesco
AU - Toffanin, Stefano
AU - Muccini, Michele
AU - Graiff, Claudia
AU - Tiripicchio, Antonio
N1 - Funding Information:
This work was supported by Italian Ministry MIUR under Projects FIRB-RBNE033KMA and at Bologna by EU under projects FP6-Marie Curie-035859 (BIMORE) and FP6-IST-015034 (OLAS) and by CNR under CNR-DPM project PROMO, and at Northwestern by the NSF-MRSEC program through Materials Research Center (DMR-0520513). Authors thank R. Zamboni for stimulating discussions.
PY - 2009/12
Y1 - 2009/12
N2 - In this paper we report polycyclic, fully-conjugated, heteroaromatic compounds 1-5, two of them having a helical shape (tetrathia-[7]-helicenes 1 and 2), and explore their potential use as p-type semiconductors for organic thin-film transistors (OTFTs). Furthermore, we describe their optical absorption, emission, and electrochemical properties. In addition, the single crystal X-ray diffraction structure for compound 3 is reported. Thin films of all compounds were fabricated on several substrates at different temperatures by physical vapor deposition, and were characterized by optical spectroscopy, wide-angle X-ray diffraction, atomic force microscopy, and TFT measurements. The AFM images of compound 1 exhibit an interesting tubular morphology for films deposited at room temperature. This is the first observation of a compound with a helical shape leading to a nanowire-like morphology. In agreement with the molecular structure/morphology, only compound 4 is a p-type semiconductor with good carrier mobility.
AB - In this paper we report polycyclic, fully-conjugated, heteroaromatic compounds 1-5, two of them having a helical shape (tetrathia-[7]-helicenes 1 and 2), and explore their potential use as p-type semiconductors for organic thin-film transistors (OTFTs). Furthermore, we describe their optical absorption, emission, and electrochemical properties. In addition, the single crystal X-ray diffraction structure for compound 3 is reported. Thin films of all compounds were fabricated on several substrates at different temperatures by physical vapor deposition, and were characterized by optical spectroscopy, wide-angle X-ray diffraction, atomic force microscopy, and TFT measurements. The AFM images of compound 1 exhibit an interesting tubular morphology for films deposited at room temperature. This is the first observation of a compound with a helical shape leading to a nanowire-like morphology. In agreement with the molecular structure/morphology, only compound 4 is a p-type semiconductor with good carrier mobility.
KW - Organic thin-film transistor
KW - Vacuum deposition
KW - p-Type semiconductor
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U2 - 10.1016/j.orgel.2009.08.018
DO - 10.1016/j.orgel.2009.08.018
M3 - Article
AN - SCOPUS:71849109376
VL - 10
SP - 1511
EP - 1520
JO - Organic Electronics
JF - Organic Electronics
SN - 1566-1199
IS - 8
ER -