Abstract
The use of surface-initiated ring-opening metathesis polymerization (SI-ROMP) for producing polymer dielectric layers is reported. Surface tethering of the catalyst to Au or Si/SiO2 surfaces is accomplished via self-assembled monolayers of thiols or silanes containing reactive olefins. Subsequent SI-ROMP of norbornene can be conducted under mild conditions. Pentacene semiconducting layers and gold drain/source electrodes are deposited over these polymer dielectric films. The resulting field effect transistors display promising device characteristics, demonstrating for the first time that SI-ROMP can be used in the construction of organic thin-film electronic devices.
| Original language | English |
|---|---|
| Pages (from-to) | 4062-4063 |
| Number of pages | 2 |
| Journal | Journal of the American Chemical Society |
| Volume | 126 |
| Issue number | 13 |
| DOIs | |
| Publication status | Published - Apr 7 2004 |
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ASJC Scopus subject areas
- Chemistry(all)
Cite this
Synthesis of Polymer Dielectric Layers for Organic Thin Film Transistors via Surface-Initiated Ring-Opening Metathesis Polymerization. / Rutenberg, Isaac M.; Scherman, Oren A.; Grubbs, Robert H.; Jiang, Weirong; Garfunkel, Eric; Bao, Zhenan.
In: Journal of the American Chemical Society, Vol. 126, No. 13, 07.04.2004, p. 4062-4063.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Synthesis of Polymer Dielectric Layers for Organic Thin Film Transistors via Surface-Initiated Ring-Opening Metathesis Polymerization
AU - Rutenberg, Isaac M.
AU - Scherman, Oren A.
AU - Grubbs, Robert H.
AU - Jiang, Weirong
AU - Garfunkel, Eric
AU - Bao, Zhenan
PY - 2004/4/7
Y1 - 2004/4/7
N2 - The use of surface-initiated ring-opening metathesis polymerization (SI-ROMP) for producing polymer dielectric layers is reported. Surface tethering of the catalyst to Au or Si/SiO2 surfaces is accomplished via self-assembled monolayers of thiols or silanes containing reactive olefins. Subsequent SI-ROMP of norbornene can be conducted under mild conditions. Pentacene semiconducting layers and gold drain/source electrodes are deposited over these polymer dielectric films. The resulting field effect transistors display promising device characteristics, demonstrating for the first time that SI-ROMP can be used in the construction of organic thin-film electronic devices.
AB - The use of surface-initiated ring-opening metathesis polymerization (SI-ROMP) for producing polymer dielectric layers is reported. Surface tethering of the catalyst to Au or Si/SiO2 surfaces is accomplished via self-assembled monolayers of thiols or silanes containing reactive olefins. Subsequent SI-ROMP of norbornene can be conducted under mild conditions. Pentacene semiconducting layers and gold drain/source electrodes are deposited over these polymer dielectric films. The resulting field effect transistors display promising device characteristics, demonstrating for the first time that SI-ROMP can be used in the construction of organic thin-film electronic devices.
UR - http://www.scopus.com/inward/record.url?scp=1842555252&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=1842555252&partnerID=8YFLogxK
U2 - 10.1021/ja035773c
DO - 10.1021/ja035773c
M3 - Article
C2 - 15053568
AN - SCOPUS:1842555252
VL - 126
SP - 4062
EP - 4063
JO - Journal of the American Chemical Society
JF - Journal of the American Chemical Society
SN - 0002-7863
IS - 13
ER -