Systematic structural and chemical characterization of the transition layer at the interface of NO-annealed 4H-SiC/SiO2 metal-oxide- semiconductor field-effect transistors

Joshua A. Taillon, Joon Hyuk Yang, Claude A. Ahyi, John Rozen, John R. Williams, Leonard C Feldman, Tsvetanka S. Zheleva, Aivars J. Lelis, Lourdes G. Salamanca-Riba

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

We present a systematic characterization of the transition layer at the 4H-SiC/SiO2 interface as a function of nitric oxide (NO) post-annealing time, using high-resolution transmission electron microscopy for structural characterization and spatially resolved electron energy-loss spectroscopy for chemical analysis. We propose a systematic method for determining transition layer width by measuring the monotonic chemical shift of the Si-L2,3 edge across the interface, and compare its efficacy to traditional measures from the literature, revealing the proposed method to be most reliable. A gradual shift in the Si-L2,3 edge onset energy suggests mixed Si-C/Si-O bonding in the transition layer. We confirm an inverse relationship between NO-anneal time and transition layer width, which correlates with improved channel mobility, enhanced N density at the interface, and decreased interface trap density. No excess C was noted in the interfacial region.

Original languageEnglish
Article number044517
JournalJournal of Applied Physics
Volume113
Issue number4
DOIs
Publication statusPublished - Jan 28 2013

Fingerprint

transition layers
nitric oxide
metal oxide semiconductors
field effect transistors
chemical analysis
chemical equilibrium
energy dissipation
traps
electron energy
transmission electron microscopy
annealing
shift
high resolution
spectroscopy
energy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Systematic structural and chemical characterization of the transition layer at the interface of NO-annealed 4H-SiC/SiO2 metal-oxide- semiconductor field-effect transistors. / Taillon, Joshua A.; Hyuk Yang, Joon; Ahyi, Claude A.; Rozen, John; Williams, John R.; Feldman, Leonard C; Zheleva, Tsvetanka S.; Lelis, Aivars J.; Salamanca-Riba, Lourdes G.

In: Journal of Applied Physics, Vol. 113, No. 4, 044517, 28.01.2013.

Research output: Contribution to journalArticle

Taillon, Joshua A. ; Hyuk Yang, Joon ; Ahyi, Claude A. ; Rozen, John ; Williams, John R. ; Feldman, Leonard C ; Zheleva, Tsvetanka S. ; Lelis, Aivars J. ; Salamanca-Riba, Lourdes G. / Systematic structural and chemical characterization of the transition layer at the interface of NO-annealed 4H-SiC/SiO2 metal-oxide- semiconductor field-effect transistors. In: Journal of Applied Physics. 2013 ; Vol. 113, No. 4.
@article{18351e3161af4f43b8ffc2a4d3e0fc41,
title = "Systematic structural and chemical characterization of the transition layer at the interface of NO-annealed 4H-SiC/SiO2 metal-oxide- semiconductor field-effect transistors",
abstract = "We present a systematic characterization of the transition layer at the 4H-SiC/SiO2 interface as a function of nitric oxide (NO) post-annealing time, using high-resolution transmission electron microscopy for structural characterization and spatially resolved electron energy-loss spectroscopy for chemical analysis. We propose a systematic method for determining transition layer width by measuring the monotonic chemical shift of the Si-L2,3 edge across the interface, and compare its efficacy to traditional measures from the literature, revealing the proposed method to be most reliable. A gradual shift in the Si-L2,3 edge onset energy suggests mixed Si-C/Si-O bonding in the transition layer. We confirm an inverse relationship between NO-anneal time and transition layer width, which correlates with improved channel mobility, enhanced N density at the interface, and decreased interface trap density. No excess C was noted in the interfacial region.",
author = "Taillon, {Joshua A.} and {Hyuk Yang}, Joon and Ahyi, {Claude A.} and John Rozen and Williams, {John R.} and Feldman, {Leonard C} and Zheleva, {Tsvetanka S.} and Lelis, {Aivars J.} and Salamanca-Riba, {Lourdes G.}",
year = "2013",
month = "1",
day = "28",
doi = "10.1063/1.4789924",
language = "English",
volume = "113",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "4",

}

TY - JOUR

T1 - Systematic structural and chemical characterization of the transition layer at the interface of NO-annealed 4H-SiC/SiO2 metal-oxide- semiconductor field-effect transistors

AU - Taillon, Joshua A.

AU - Hyuk Yang, Joon

AU - Ahyi, Claude A.

AU - Rozen, John

AU - Williams, John R.

AU - Feldman, Leonard C

AU - Zheleva, Tsvetanka S.

AU - Lelis, Aivars J.

AU - Salamanca-Riba, Lourdes G.

PY - 2013/1/28

Y1 - 2013/1/28

N2 - We present a systematic characterization of the transition layer at the 4H-SiC/SiO2 interface as a function of nitric oxide (NO) post-annealing time, using high-resolution transmission electron microscopy for structural characterization and spatially resolved electron energy-loss spectroscopy for chemical analysis. We propose a systematic method for determining transition layer width by measuring the monotonic chemical shift of the Si-L2,3 edge across the interface, and compare its efficacy to traditional measures from the literature, revealing the proposed method to be most reliable. A gradual shift in the Si-L2,3 edge onset energy suggests mixed Si-C/Si-O bonding in the transition layer. We confirm an inverse relationship between NO-anneal time and transition layer width, which correlates with improved channel mobility, enhanced N density at the interface, and decreased interface trap density. No excess C was noted in the interfacial region.

AB - We present a systematic characterization of the transition layer at the 4H-SiC/SiO2 interface as a function of nitric oxide (NO) post-annealing time, using high-resolution transmission electron microscopy for structural characterization and spatially resolved electron energy-loss spectroscopy for chemical analysis. We propose a systematic method for determining transition layer width by measuring the monotonic chemical shift of the Si-L2,3 edge across the interface, and compare its efficacy to traditional measures from the literature, revealing the proposed method to be most reliable. A gradual shift in the Si-L2,3 edge onset energy suggests mixed Si-C/Si-O bonding in the transition layer. We confirm an inverse relationship between NO-anneal time and transition layer width, which correlates with improved channel mobility, enhanced N density at the interface, and decreased interface trap density. No excess C was noted in the interfacial region.

UR - http://www.scopus.com/inward/record.url?scp=84873678803&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84873678803&partnerID=8YFLogxK

U2 - 10.1063/1.4789924

DO - 10.1063/1.4789924

M3 - Article

VL - 113

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 4

M1 - 044517

ER -