Systematic structural and chemical characterization of the transition layer at the interface of NO-annealed 4H-SiC/SiO2 metal-oxide- semiconductor field-effect transistors

Joshua A. Taillon, Joon Hyuk Yang, Claude A. Ahyi, John Rozen, John R. Williams, Leonard C. Feldman, Tsvetanka S. Zheleva, Aivars J. Lelis, Lourdes G. Salamanca-Riba

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28 Citations (Scopus)

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Physics & Astronomy