Due to the Gaussian disorder of the molecular levels of the classical thermal activated injection mechanism, it is shown that the injection current from a metal to a disordered dielectric obeys the law ln(j)∝√E. The injection efficiency increases with increasing disorder because of the formation of the rare fluctuational pathways. The carrier transport occurs mostly along these pathways at sufficiently high voltages, corresponding to the performance of organic devices.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physical and Theoretical Chemistry