Temperature dependence and annealing effects of absorption edges for selenium quantum dots formed by ion implantation in silica glass

A. Ueda, M. Wu, R. Mu, Y. S. Tung, D. O. Henderson, A. Meldrum, R. A. Zuhr, J. D. Budai, C. W. White, J. C. Keay, Leonard C Feldman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have fabricated Se nanoparticles in silica substrates by ion implantation followed by thermal annealing up to 1000 °C, and studied the Se nanoparticle formation by optical absorption spectroscopy, Rutherford backscattering spectrometry, X-ray diffraction, and transmission electron microscopy. The sample with the highest dose (1×1017 ions/cm2) showed the nanoparticle formation during the ion implantation, while the lower dose samples (1 and 3×1016 ions/cm2) required thermal treatment to obtain nano-sized particles. The Se nanoparticles in silica were found to be amorphous. After thermal annealing, the particle sizes became larger than the exciton Bohr radius for bulk Se. Thus, the absorption edges for different doses approached the value of bulk after thermal annealing. The temperature dependent absorption spectra were also measured for this system in a temperature range from 15 to 300 K.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMRS
Pages501-506
Number of pages6
Volume481
Publication statusPublished - 1998
EventProceedings of the 1997 MRS Fall Symposium - Boston, MA, USA
Duration: Dec 2 1997Dec 5 1997

Other

OtherProceedings of the 1997 MRS Fall Symposium
CityBoston, MA, USA
Period12/2/9712/5/97

Fingerprint

Selenium
Fused silica
Ion implantation
Semiconductor quantum dots
Annealing
Nanoparticles
Silicon Dioxide
Silica
Ions
Temperature
Rutherford backscattering spectroscopy
Absorption spectroscopy
Excitons
Light absorption
Spectrometry
Absorption spectra
Particle size
Heat treatment
Transmission electron microscopy
X ray diffraction

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Ueda, A., Wu, M., Mu, R., Tung, Y. S., Henderson, D. O., Meldrum, A., ... Feldman, L. C. (1998). Temperature dependence and annealing effects of absorption edges for selenium quantum dots formed by ion implantation in silica glass. In Materials Research Society Symposium - Proceedings (Vol. 481, pp. 501-506). MRS.

Temperature dependence and annealing effects of absorption edges for selenium quantum dots formed by ion implantation in silica glass. / Ueda, A.; Wu, M.; Mu, R.; Tung, Y. S.; Henderson, D. O.; Meldrum, A.; Zuhr, R. A.; Budai, J. D.; White, C. W.; Keay, J. C.; Feldman, Leonard C.

Materials Research Society Symposium - Proceedings. Vol. 481 MRS, 1998. p. 501-506.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ueda, A, Wu, M, Mu, R, Tung, YS, Henderson, DO, Meldrum, A, Zuhr, RA, Budai, JD, White, CW, Keay, JC & Feldman, LC 1998, Temperature dependence and annealing effects of absorption edges for selenium quantum dots formed by ion implantation in silica glass. in Materials Research Society Symposium - Proceedings. vol. 481, MRS, pp. 501-506, Proceedings of the 1997 MRS Fall Symposium, Boston, MA, USA, 12/2/97.
Ueda A, Wu M, Mu R, Tung YS, Henderson DO, Meldrum A et al. Temperature dependence and annealing effects of absorption edges for selenium quantum dots formed by ion implantation in silica glass. In Materials Research Society Symposium - Proceedings. Vol. 481. MRS. 1998. p. 501-506
Ueda, A. ; Wu, M. ; Mu, R. ; Tung, Y. S. ; Henderson, D. O. ; Meldrum, A. ; Zuhr, R. A. ; Budai, J. D. ; White, C. W. ; Keay, J. C. ; Feldman, Leonard C. / Temperature dependence and annealing effects of absorption edges for selenium quantum dots formed by ion implantation in silica glass. Materials Research Society Symposium - Proceedings. Vol. 481 MRS, 1998. pp. 501-506
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AU - Ueda, A.

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AU - Mu, R.

AU - Tung, Y. S.

AU - Henderson, D. O.

AU - Meldrum, A.

AU - Zuhr, R. A.

AU - Budai, J. D.

AU - White, C. W.

AU - Keay, J. C.

AU - Feldman, Leonard C

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N2 - We have fabricated Se nanoparticles in silica substrates by ion implantation followed by thermal annealing up to 1000 °C, and studied the Se nanoparticle formation by optical absorption spectroscopy, Rutherford backscattering spectrometry, X-ray diffraction, and transmission electron microscopy. The sample with the highest dose (1×1017 ions/cm2) showed the nanoparticle formation during the ion implantation, while the lower dose samples (1 and 3×1016 ions/cm2) required thermal treatment to obtain nano-sized particles. The Se nanoparticles in silica were found to be amorphous. After thermal annealing, the particle sizes became larger than the exciton Bohr radius for bulk Se. Thus, the absorption edges for different doses approached the value of bulk after thermal annealing. The temperature dependent absorption spectra were also measured for this system in a temperature range from 15 to 300 K.

AB - We have fabricated Se nanoparticles in silica substrates by ion implantation followed by thermal annealing up to 1000 °C, and studied the Se nanoparticle formation by optical absorption spectroscopy, Rutherford backscattering spectrometry, X-ray diffraction, and transmission electron microscopy. The sample with the highest dose (1×1017 ions/cm2) showed the nanoparticle formation during the ion implantation, while the lower dose samples (1 and 3×1016 ions/cm2) required thermal treatment to obtain nano-sized particles. The Se nanoparticles in silica were found to be amorphous. After thermal annealing, the particle sizes became larger than the exciton Bohr radius for bulk Se. Thus, the absorption edges for different doses approached the value of bulk after thermal annealing. The temperature dependent absorption spectra were also measured for this system in a temperature range from 15 to 300 K.

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