Termination effects at metal/ceramic junctions

Schottky barrier heights and interface properties of the β-SiC(001)/Ni systems

G. Profeta, A. Blasetti, S. Picozzi, A. Continenza, Arthur J Freeman

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

First-principles full-potential linearized augmented plane wave calculations for the β-SiC[001]/Ni interface are presented, focused on the effects of different terminations on the structural and electronic properties. We find a strong reactivity of the interface, as confirmed by the high adhesion energies that are larger for the C-terminated junction than for the Si-terminated junction, in agreement with that previously found for Ti and Al. The metal-induced gap states are efficiently screened in both terminations, resulting in a decay length of about 1 Å. The calculated dependence of the Schottky barrier height on different terminations is not very strong and we investigate the observed differences between Si- and C-terminated junctions in terms of Born effective charges, electronegativity arguments, interface geometries, and screening effects. The agreement with available experimental data is excellent, thus confirming the strong rectifying behavior of this metal/ceramic contact.

Original languageEnglish
Article number235312
Pages (from-to)2353121-2353126
Number of pages6
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume64
Issue number23
Publication statusPublished - Dec 15 2001

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Electronegativity
Cermets
Electronic properties
Structural properties
Screening
Adhesion
Metals
ceramics
Geometry
metals
plane waves
adhesion
screening
reactivity
decay
geometry
electronics
energy

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Termination effects at metal/ceramic junctions : Schottky barrier heights and interface properties of the β-SiC(001)/Ni systems. / Profeta, G.; Blasetti, A.; Picozzi, S.; Continenza, A.; Freeman, Arthur J.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 64, No. 23, 235312, 15.12.2001, p. 2353121-2353126.

Research output: Contribution to journalArticle

@article{efcf6a59fa794abeaf31b54d51427d4d,
title = "Termination effects at metal/ceramic junctions: Schottky barrier heights and interface properties of the β-SiC(001)/Ni systems",
abstract = "First-principles full-potential linearized augmented plane wave calculations for the β-SiC[001]/Ni interface are presented, focused on the effects of different terminations on the structural and electronic properties. We find a strong reactivity of the interface, as confirmed by the high adhesion energies that are larger for the C-terminated junction than for the Si-terminated junction, in agreement with that previously found for Ti and Al. The metal-induced gap states are efficiently screened in both terminations, resulting in a decay length of about 1 {\AA}. The calculated dependence of the Schottky barrier height on different terminations is not very strong and we investigate the observed differences between Si- and C-terminated junctions in terms of Born effective charges, electronegativity arguments, interface geometries, and screening effects. The agreement with available experimental data is excellent, thus confirming the strong rectifying behavior of this metal/ceramic contact.",
author = "G. Profeta and A. Blasetti and S. Picozzi and A. Continenza and Freeman, {Arthur J}",
year = "2001",
month = "12",
day = "15",
language = "English",
volume = "64",
pages = "2353121--2353126",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "23",

}

TY - JOUR

T1 - Termination effects at metal/ceramic junctions

T2 - Schottky barrier heights and interface properties of the β-SiC(001)/Ni systems

AU - Profeta, G.

AU - Blasetti, A.

AU - Picozzi, S.

AU - Continenza, A.

AU - Freeman, Arthur J

PY - 2001/12/15

Y1 - 2001/12/15

N2 - First-principles full-potential linearized augmented plane wave calculations for the β-SiC[001]/Ni interface are presented, focused on the effects of different terminations on the structural and electronic properties. We find a strong reactivity of the interface, as confirmed by the high adhesion energies that are larger for the C-terminated junction than for the Si-terminated junction, in agreement with that previously found for Ti and Al. The metal-induced gap states are efficiently screened in both terminations, resulting in a decay length of about 1 Å. The calculated dependence of the Schottky barrier height on different terminations is not very strong and we investigate the observed differences between Si- and C-terminated junctions in terms of Born effective charges, electronegativity arguments, interface geometries, and screening effects. The agreement with available experimental data is excellent, thus confirming the strong rectifying behavior of this metal/ceramic contact.

AB - First-principles full-potential linearized augmented plane wave calculations for the β-SiC[001]/Ni interface are presented, focused on the effects of different terminations on the structural and electronic properties. We find a strong reactivity of the interface, as confirmed by the high adhesion energies that are larger for the C-terminated junction than for the Si-terminated junction, in agreement with that previously found for Ti and Al. The metal-induced gap states are efficiently screened in both terminations, resulting in a decay length of about 1 Å. The calculated dependence of the Schottky barrier height on different terminations is not very strong and we investigate the observed differences between Si- and C-terminated junctions in terms of Born effective charges, electronegativity arguments, interface geometries, and screening effects. The agreement with available experimental data is excellent, thus confirming the strong rectifying behavior of this metal/ceramic contact.

UR - http://www.scopus.com/inward/record.url?scp=0035893986&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035893986&partnerID=8YFLogxK

M3 - Article

VL - 64

SP - 2353121

EP - 2353126

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 23

M1 - 235312

ER -