TETRAGONAL STRAIN IN MBE Ge//xSi//1// minus //x FILMS GROWN ON (100) Si OBSERVED BY ION CHANNELING AND X-RAY DIFFRACTION.

A. T. Fiory, Leonard C Feldman, J. C. Bean, I. K. Robinson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)
Original languageEnglish
Title of host publicationMaterials Research Society Symposia Proceedings
PublisherNorth-Holland
Pages497-502
Number of pages6
Volume25
ISBN (Print)0444009051
Publication statusPublished - 1984

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x ray diffraction
ions

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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Fiory, A. T., Feldman, L. C., Bean, J. C., & Robinson, I. K. (1984). TETRAGONAL STRAIN IN MBE Ge//xSi//1// minus //x FILMS GROWN ON (100) Si OBSERVED BY ION CHANNELING AND X-RAY DIFFRACTION. In Materials Research Society Symposia Proceedings (Vol. 25, pp. 497-502). North-Holland.

TETRAGONAL STRAIN IN MBE Ge//xSi//1// minus //x FILMS GROWN ON (100) Si OBSERVED BY ION CHANNELING AND X-RAY DIFFRACTION. / Fiory, A. T.; Feldman, Leonard C; Bean, J. C.; Robinson, I. K.

Materials Research Society Symposia Proceedings. Vol. 25 North-Holland, 1984. p. 497-502.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Fiory, AT, Feldman, LC, Bean, JC & Robinson, IK 1984, TETRAGONAL STRAIN IN MBE Ge//xSi//1// minus //x FILMS GROWN ON (100) Si OBSERVED BY ION CHANNELING AND X-RAY DIFFRACTION. in Materials Research Society Symposia Proceedings. vol. 25, North-Holland, pp. 497-502.
Fiory AT, Feldman LC, Bean JC, Robinson IK. TETRAGONAL STRAIN IN MBE Ge//xSi//1// minus //x FILMS GROWN ON (100) Si OBSERVED BY ION CHANNELING AND X-RAY DIFFRACTION. In Materials Research Society Symposia Proceedings. Vol. 25. North-Holland. 1984. p. 497-502
Fiory, A. T. ; Feldman, Leonard C ; Bean, J. C. ; Robinson, I. K. / TETRAGONAL STRAIN IN MBE Ge//xSi//1// minus //x FILMS GROWN ON (100) Si OBSERVED BY ION CHANNELING AND X-RAY DIFFRACTION. Materials Research Society Symposia Proceedings. Vol. 25 North-Holland, 1984. pp. 497-502
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