Thallous chalcogenide (Tl 6I 4Se) for radiation detection at X-ray and γ-ray energies

Zhifu Liu, John A. Peters, Bruce W. Wessels, Simon Johnsen, Mercouri G. Kanatzidis

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

The optical and charge transport properties of the thallous chalcogenide compound Tl 6I 4Se were characterized. The semiconductor crystals are grown by the modified Bridgman method. We have measured the refractive index, and absorption coefficient of the compound ranging from 300 to 1500 nm by analysis of the UVvisnear IR transmission and reflection spectra. The band gap is 1.8 eV. For the evaluation of detector performance, the mobility-lifetime products for both the electron and hole carriers were measured. Tl 6I 4Se has mobility-lifetime products of 7.1×10 -3 and 5.9×10 -4 cm 2+/V for electron and hole carriers, respectively, which are comparable to those of Cd 0.9Zn 0.1Te. The γ-ray spectrum for a Tl 6I 4Se detector was measured. Its response to the 122 keV of 57Co source is comparable to that of Cd 0.9Zn 0.1Te.

Original languageEnglish
Pages (from-to)333-335
Number of pages3
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume659
Issue number1
DOIs
Publication statusPublished - Dec 11 2011

Keywords

  • Photoconductivity
  • Tl-chalcogenide
  • Wide gap semiconductor
  • γ-ray detector

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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