Abstract
Recent studies to improve the crystallization of PZT on silicon by using a very thin intermediate barrier layer are presented. Barrier layer compositions which displayed beneficial effects included: SrTiO3, BaTiO3, BaZrO3, LaAlO3 and NdAlO3. X-ray diffraction was performed to monitor the phase transformation using barrier layers. High Resolution Transmission Electron Microscopy (HRTEM) was used to characterize the sample with the SrTiO3 inter-layer. Energy Dispersive X-ray Spectroscopy (EDX) was applied for microchemical analysis and the lead distribution through the film depth was determined with a step-scanning method. Seeding layers which were nanocrystalline and dense were best at promoting PZT microstructure development because of increasing nucleation as well as reducing interdiffusion.
Original language | English |
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Pages (from-to) | 855-859 |
Number of pages | 5 |
Journal | Journal of Sol-Gel Science and Technology |
Volume | 13 |
Issue number | 1-3 |
Publication status | Published - 1999 |
Keywords
- Barrier layers
- Crystallization
- PZT
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Chemistry(all)
- Biomaterials
- Condensed Matter Physics
- Materials Chemistry