The effect of interface arsenic domains on the electrical properties of GaAs MOS structures

Robert P. H. Chang, T. T. Sheng, C. C. Chang, J. J. Coleman

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Abstract

Postgrowth annealing of plasma grown GaAs oxides in N2 and H2 result in very different electrical behaviors. By examining cross-sectioned specimens of these oxides with transmission electron microscopy, and correlating the observed structure with electrical measurements, it is demonstrated that metallic As at the oxide-semiconductor interface plays a significant role in determining the MOS characteristics.

Original languageEnglish
Pages (from-to)341-342
Number of pages2
JournalApplied Physics Letters
Volume33
Issue number4
DOIs
Publication statusPublished - 1978

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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