The effect of interface arsenic domains on the electrical properties of GaAs MOS structures

Robert P. H. Chang, T. T. Sheng, C. C. Chang, J. J. Coleman

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

Postgrowth annealing of plasma grown GaAs oxides in N2 and H2 result in very different electrical behaviors. By examining cross-sectioned specimens of these oxides with transmission electron microscopy, and correlating the observed structure with electrical measurements, it is demonstrated that metallic As at the oxide-semiconductor interface plays a significant role in determining the MOS characteristics.

Original languageEnglish
Pages (from-to)341-342
Number of pages2
JournalApplied Physics Letters
Volume33
Issue number4
DOIs
Publication statusPublished - 1978

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arsenic
electrical properties
oxides
electrical measurement
transmission electron microscopy
annealing

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

The effect of interface arsenic domains on the electrical properties of GaAs MOS structures. / Chang, Robert P. H.; Sheng, T. T.; Chang, C. C.; Coleman, J. J.

In: Applied Physics Letters, Vol. 33, No. 4, 1978, p. 341-342.

Research output: Contribution to journalArticle

Chang, Robert P. H. ; Sheng, T. T. ; Chang, C. C. ; Coleman, J. J. / The effect of interface arsenic domains on the electrical properties of GaAs MOS structures. In: Applied Physics Letters. 1978 ; Vol. 33, No. 4. pp. 341-342.
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