The effect of nitrogen on pulsed laser deposition of amorphous silicon carbide films: Properties and structure

Andrew L. Yee, H. C. Ong, Fulin Xiong, Robert P. H. Chang

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The influence of nitrogen on amorphous silicon carbide films deposited at room temperature using pulsed laser ablation has been investigated. Depositions were carried out either in ultrahigh vacuum or in a nitrogen ambient ranging from 10 to 100 mT. The mechanical and optical properties, as well as composition and structure of the resulting films, were evaluated using a variety of analytical techniques. Vacuum-deposited films exhibited high hardness but suffered from high compressive stresses (>1 GPa). At low nitrogen background pressures (2 found in the films as evidenced by spectroscopic ellipsometry, infrared spectroscopy, and Auger electron spectroscopy measurements. The source of oxygen is attributed to residual water vapor present in our vacuum system. Optical emission spectroscopy was used to confirm the presence of Si-O species in the laser-induced plasma plume.

Original languageEnglish
Pages (from-to)1979-1986
Number of pages8
JournalJournal of Materials Research
Volume11
Issue number8
Publication statusPublished - Aug 1996

Fingerprint

Pulsed laser deposition
Amorphous silicon
Silicon carbide
silicon carbides
pulsed laser deposition
amorphous silicon
Nitrogen
nitrogen
Vacuum
Optical emission spectroscopy
Spectroscopic ellipsometry
vacuum systems
Steam
optical emission spectroscopy
Ultrahigh vacuum
Laser ablation
Auger electron spectroscopy
Pulsed lasers
Compressive stress
Water vapor

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

The effect of nitrogen on pulsed laser deposition of amorphous silicon carbide films : Properties and structure. / Yee, Andrew L.; Ong, H. C.; Xiong, Fulin; Chang, Robert P. H.

In: Journal of Materials Research, Vol. 11, No. 8, 08.1996, p. 1979-1986.

Research output: Contribution to journalArticle

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