The effect of nitrogen on pulsed laser deposition of amorphous silicon carbide films: Properties and structure

Andrew L. Yee; H. C. Ong; Fulin Xiong; Robert P. H. Chang

The effect of nitrogen on pulsed laser deposition of amorphous silicon carbide films: Properties and structure

Andrew L. Yee, H. C. Ong, Fulin Xiong, Robert P. H. Chang

Northwestern University

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The influence of nitrogen on amorphous silicon carbide films deposited at room temperature using pulsed laser ablation has been investigated. Depositions were carried out either in ultrahigh vacuum or in a nitrogen ambient ranging from 10 to 100 mT. The mechanical and optical properties, as well as composition and structure of the resulting films, were evaluated using a variety of analytical techniques. Vacuum-deposited films exhibited high hardness but suffered from high compressive stresses (>1 GPa). At low nitrogen background pressures (2 found in the films as evidenced by spectroscopic ellipsometry, infrared spectroscopy, and Auger electron spectroscopy measurements. The source of oxygen is attributed to residual water vapor present in our vacuum system. Optical emission spectroscopy was used to confirm the presence of Si-O species in the laser-induced plasma plume.

Original language	English
Pages (from-to)	1979-1986
Number of pages	8
Journal	Journal of Materials Research
Volume	11
Issue number	8
Publication status	Published - Aug 1996

ASJC Scopus subject areas

Materials Science(all)

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@article{0d9eed62519c4ed383500c1af3e1776a,

title = "The effect of nitrogen on pulsed laser deposition of amorphous silicon carbide films: Properties and structure",

abstract = "The influence of nitrogen on amorphous silicon carbide films deposited at room temperature using pulsed laser ablation has been investigated. Depositions were carried out either in ultrahigh vacuum or in a nitrogen ambient ranging from 10 to 100 mT. The mechanical and optical properties, as well as composition and structure of the resulting films, were evaluated using a variety of analytical techniques. Vacuum-deposited films exhibited high hardness but suffered from high compressive stresses (>1 GPa). At low nitrogen background pressures (2 found in the films as evidenced by spectroscopic ellipsometry, infrared spectroscopy, and Auger electron spectroscopy measurements. The source of oxygen is attributed to residual water vapor present in our vacuum system. Optical emission spectroscopy was used to confirm the presence of Si-O species in the laser-induced plasma plume.",

author = "Yee, {Andrew L.} and Ong, {H. C.} and Fulin Xiong and Chang, {Robert P. H.}",

year = "1996",

month = aug,

language = "English",

volume = "11",

pages = "1979--1986",

journal = "Journal of Materials Research",

issn = "0884-2914",

publisher = "Materials Research Society",

number = "8",

}

TY - JOUR

T1 - The effect of nitrogen on pulsed laser deposition of amorphous silicon carbide films

T2 - Properties and structure

AU - Yee, Andrew L.

AU - Ong, H. C.

AU - Xiong, Fulin

AU - Chang, Robert P. H.

PY - 1996/8

Y1 - 1996/8

N2 - The influence of nitrogen on amorphous silicon carbide films deposited at room temperature using pulsed laser ablation has been investigated. Depositions were carried out either in ultrahigh vacuum or in a nitrogen ambient ranging from 10 to 100 mT. The mechanical and optical properties, as well as composition and structure of the resulting films, were evaluated using a variety of analytical techniques. Vacuum-deposited films exhibited high hardness but suffered from high compressive stresses (>1 GPa). At low nitrogen background pressures (2 found in the films as evidenced by spectroscopic ellipsometry, infrared spectroscopy, and Auger electron spectroscopy measurements. The source of oxygen is attributed to residual water vapor present in our vacuum system. Optical emission spectroscopy was used to confirm the presence of Si-O species in the laser-induced plasma plume.

AB - The influence of nitrogen on amorphous silicon carbide films deposited at room temperature using pulsed laser ablation has been investigated. Depositions were carried out either in ultrahigh vacuum or in a nitrogen ambient ranging from 10 to 100 mT. The mechanical and optical properties, as well as composition and structure of the resulting films, were evaluated using a variety of analytical techniques. Vacuum-deposited films exhibited high hardness but suffered from high compressive stresses (>1 GPa). At low nitrogen background pressures (2 found in the films as evidenced by spectroscopic ellipsometry, infrared spectroscopy, and Auger electron spectroscopy measurements. The source of oxygen is attributed to residual water vapor present in our vacuum system. Optical emission spectroscopy was used to confirm the presence of Si-O species in the laser-induced plasma plume.

UR - http://www.scopus.com/inward/record.url?scp=0030214287&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030214287&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0030214287

VL - 11

SP - 1979

EP - 1986

JO - Journal of Materials Research

JF - Journal of Materials Research

SN - 0884-2914

IS - 8

ER -