Abstract
The influence of nitrogen on amorphous silicon carbide films deposited at room temperature using pulsed laser ablation has been investigated. Depositions were carried out either in ultrahigh vacuum or in a nitrogen ambient ranging from 10 to 100 mT. The mechanical and optical properties, as well as composition and structure of the resulting films, were evaluated using a variety of analytical techniques. Vacuum-deposited films exhibited high hardness but suffered from high compressive stresses (>1 GPa). At low nitrogen background pressures (2 found in the films as evidenced by spectroscopic ellipsometry, infrared spectroscopy, and Auger electron spectroscopy measurements. The source of oxygen is attributed to residual water vapor present in our vacuum system. Optical emission spectroscopy was used to confirm the presence of Si-O species in the laser-induced plasma plume.
| Original language | English |
|---|---|
| Pages (from-to) | 1979-1986 |
| Number of pages | 8 |
| Journal | Journal of Materials Research |
| Volume | 11 |
| Issue number | 8 |
| Publication status | Published - Aug 1996 |
Fingerprint
ASJC Scopus subject areas
- Materials Science(all)
Cite this
The effect of nitrogen on pulsed laser deposition of amorphous silicon carbide films : Properties and structure. / Yee, Andrew L.; Ong, H. C.; Xiong, Fulin; Chang, Robert P. H.
In: Journal of Materials Research, Vol. 11, No. 8, 08.1996, p. 1979-1986.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - The effect of nitrogen on pulsed laser deposition of amorphous silicon carbide films
T2 - Properties and structure
AU - Yee, Andrew L.
AU - Ong, H. C.
AU - Xiong, Fulin
AU - Chang, Robert P. H.
PY - 1996/8
Y1 - 1996/8
N2 - The influence of nitrogen on amorphous silicon carbide films deposited at room temperature using pulsed laser ablation has been investigated. Depositions were carried out either in ultrahigh vacuum or in a nitrogen ambient ranging from 10 to 100 mT. The mechanical and optical properties, as well as composition and structure of the resulting films, were evaluated using a variety of analytical techniques. Vacuum-deposited films exhibited high hardness but suffered from high compressive stresses (>1 GPa). At low nitrogen background pressures (2 found in the films as evidenced by spectroscopic ellipsometry, infrared spectroscopy, and Auger electron spectroscopy measurements. The source of oxygen is attributed to residual water vapor present in our vacuum system. Optical emission spectroscopy was used to confirm the presence of Si-O species in the laser-induced plasma plume.
AB - The influence of nitrogen on amorphous silicon carbide films deposited at room temperature using pulsed laser ablation has been investigated. Depositions were carried out either in ultrahigh vacuum or in a nitrogen ambient ranging from 10 to 100 mT. The mechanical and optical properties, as well as composition and structure of the resulting films, were evaluated using a variety of analytical techniques. Vacuum-deposited films exhibited high hardness but suffered from high compressive stresses (>1 GPa). At low nitrogen background pressures (2 found in the films as evidenced by spectroscopic ellipsometry, infrared spectroscopy, and Auger electron spectroscopy measurements. The source of oxygen is attributed to residual water vapor present in our vacuum system. Optical emission spectroscopy was used to confirm the presence of Si-O species in the laser-induced plasma plume.
UR - http://www.scopus.com/inward/record.url?scp=0030214287&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0030214287&partnerID=8YFLogxK
M3 - Article
VL - 11
SP - 1979
EP - 1986
JO - Journal of Materials Research
JF - Journal of Materials Research
SN - 0884-2914
IS - 8
ER -