The effect of nitrogen plasma anneals on interface trap density and channel mobility for 4H-SiC MOS devices

Xingguang Zhu, Ayayi C. Ahyi, Mingyu Li, Zengjun Chen, John Rozen, Leonard C. Feldman, John R. Williams

Research output: Contribution to journalArticle

29 Citations (Scopus)


We report results on the introduction of nitrogen at the SiC/SiO 2 interface using a plasma process, thus avoiding the detrimental effects of additional oxidation that accompany other standard nitridation processes, such as annealing in NO gas. The plasma process results in an 'NO-like' mobility for approximately 1/6 the interfacial nitrogen content injected via the gas anneal. Direct exposure of the oxide to the plasma is also shown to have a deleterious effect on the breakdown characteristics of the oxide.

Original languageEnglish
Pages (from-to)76-79
Number of pages4
JournalSolid-State Electronics
Issue number1
Publication statusPublished - Mar 1 2011



  • Channel mobility
  • Interface trap density
  • Oxide interface
  • Plasma nitridation
  • Silicon carbide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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