The effect of nitrogen plasma anneals on interface trap density and channel mobility for 4H-SiC MOS devices

Xingguang Zhu, Ayayi C. Ahyi, Mingyu Li, Zengjun Chen, John Rozen, Leonard C Feldman, John R. Williams

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

We report results on the introduction of nitrogen at the SiC/SiO 2 interface using a plasma process, thus avoiding the detrimental effects of additional oxidation that accompany other standard nitridation processes, such as annealing in NO gas. The plasma process results in an 'NO-like' mobility for approximately 1/6 the interfacial nitrogen content injected via the gas anneal. Direct exposure of the oxide to the plasma is also shown to have a deleterious effect on the breakdown characteristics of the oxide.

Original languageEnglish
Pages (from-to)76-79
Number of pages4
JournalSolid-State Electronics
Volume57
Issue number1
DOIs
Publication statusPublished - Mar 2011

Fingerprint

Nitrogen plasma
MOS devices
nitrogen plasma
traps
Plasmas
Oxides
Nitrogen
Gases
nitrogen
Nitridation
oxides
gases
breakdown
Annealing
Oxidation
oxidation
annealing

Keywords

  • Channel mobility
  • Interface trap density
  • Oxide interface
  • Plasma nitridation
  • Silicon carbide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

The effect of nitrogen plasma anneals on interface trap density and channel mobility for 4H-SiC MOS devices. / Zhu, Xingguang; Ahyi, Ayayi C.; Li, Mingyu; Chen, Zengjun; Rozen, John; Feldman, Leonard C; Williams, John R.

In: Solid-State Electronics, Vol. 57, No. 1, 03.2011, p. 76-79.

Research output: Contribution to journalArticle

Zhu, Xingguang ; Ahyi, Ayayi C. ; Li, Mingyu ; Chen, Zengjun ; Rozen, John ; Feldman, Leonard C ; Williams, John R. / The effect of nitrogen plasma anneals on interface trap density and channel mobility for 4H-SiC MOS devices. In: Solid-State Electronics. 2011 ; Vol. 57, No. 1. pp. 76-79.
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