The effect of the reactant gas on YBa2Cu3Ox film formation

D. B. Buchholz, P. R. Markworth, J. A. Belot, Tobin J Marks, Robert P. H. Chang

Research output: Contribution to journalArticle

Abstract

The reactant gas used as the deposition ambient has a large effect on the composition and properties of cuprate superconductor films. In this study YBa2Cu3O, thin films are deposited by pulsed organometallic beam epitaxy (POMBE). The barium precursor used contains fluorine and it is therefore possible to incorporate unwanted fluorine into the deposited film. For our deposition process both the fluorine content and oxygen content of the film are highly dependent on the reactant gas used as the deposition ambient. Many of the reaction conditions that remove fluorine also deplete the film of oxygen. In this study a set of reaction conditions that produce YBa2Cu2Ox films which are both fluorine-free and fully oxygenated are presented.

Original languageEnglish
Pages (from-to)166-171
Number of pages6
JournalMaterials Chemistry and Physics
Volume50
Issue number2
Publication statusPublished - Sep 1997

Fingerprint

Fluorine
fluorine
Gases
gases
Oxygen
Organometallics
oxygen
Barium
Epitaxial growth
epitaxy
cuprates
barium
Thin films
thin films
Chemical analysis

Keywords

  • Film formation
  • Reactant gas
  • YBaCuO films

ASJC Scopus subject areas

  • Materials Chemistry

Cite this

The effect of the reactant gas on YBa2Cu3Ox film formation. / Buchholz, D. B.; Markworth, P. R.; Belot, J. A.; Marks, Tobin J; Chang, Robert P. H.

In: Materials Chemistry and Physics, Vol. 50, No. 2, 09.1997, p. 166-171.

Research output: Contribution to journalArticle

Buchholz, DB, Markworth, PR, Belot, JA, Marks, TJ & Chang, RPH 1997, 'The effect of the reactant gas on YBa2Cu3Ox film formation', Materials Chemistry and Physics, vol. 50, no. 2, pp. 166-171.
Buchholz, D. B. ; Markworth, P. R. ; Belot, J. A. ; Marks, Tobin J ; Chang, Robert P. H. / The effect of the reactant gas on YBa2Cu3Ox film formation. In: Materials Chemistry and Physics. 1997 ; Vol. 50, No. 2. pp. 166-171.
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