The effects of phosphorus at the SiO 2/4H-SiC interface

Y. K. Sharma, A. C. Ahyi, T. Issacs-Smith, X. Shen, S. T. Pantelides, X. Zhu, J. Rozen, Leonard C Feldman, J. R. Williams, Yi Xu, Eric Garfunkel

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Phosphorus passivation of the SiO 2/4H-SiC interface lowers the interface trap density and increases the field effect mobility for N-channel MOSFETs to twice the value of 30-40cm 2/V-s obtained using standard NO nitridation. Passivation using P 2O 5 introduced with an SiP 2O 7 planar diffusion source (PDS) converts the oxide layer to phosphosilicate glass (PSG) which is a polar material. BTS (bias-temperature-stress) measurements with MOS capacitors and FETs show that the benefits of reduced interface trap density and increased mobility are offset by unstable flat band and threshold voltages. This instability can be removed by etching away the PSG oxide and depositing a replacement SiO 2 layer. However, trap densities for etched MOS capacitors are "NO-like" (i.e., higher), which would lead one to expect a lower mobility if MOSFETs are fabricated with the PSG / etch / deposited oxide process.

Original languageEnglish
Title of host publicationMaterials Science Forum
Pages743-746
Number of pages4
Volume717-720
DOIs
Publication statusPublished - 2012
Event14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 - Cleveland, OH, United States
Duration: Sep 11 2011Sep 16 2011

Publication series

NameMaterials Science Forum
Volume717-720
ISSN (Print)02555476

Other

Other14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011
CountryUnited States
CityCleveland, OH
Period9/11/119/16/11

Fingerprint

Phosphorus
Oxides
phosphorus
MOS capacitors
field effect transistors
traps
Passivation
Glass
passivity
oxides
glass
capacitors
Nitridation
stress measurement
Stress measurement
Field effect transistors
Threshold voltage
Temperature measurement
threshold voltage
Etching

Keywords

  • Channel mobility
  • Interface trap density
  • Phosphorus
  • Threshold voltage stability

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Sharma, Y. K., Ahyi, A. C., Issacs-Smith, T., Shen, X., Pantelides, S. T., Zhu, X., ... Garfunkel, E. (2012). The effects of phosphorus at the SiO 2/4H-SiC interface. In Materials Science Forum (Vol. 717-720, pp. 743-746). (Materials Science Forum; Vol. 717-720). https://doi.org/10.4028/www.scientific.net/MSF.717-720.743

The effects of phosphorus at the SiO 2/4H-SiC interface. / Sharma, Y. K.; Ahyi, A. C.; Issacs-Smith, T.; Shen, X.; Pantelides, S. T.; Zhu, X.; Rozen, J.; Feldman, Leonard C; Williams, J. R.; Xu, Yi; Garfunkel, Eric.

Materials Science Forum. Vol. 717-720 2012. p. 743-746 (Materials Science Forum; Vol. 717-720).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sharma, YK, Ahyi, AC, Issacs-Smith, T, Shen, X, Pantelides, ST, Zhu, X, Rozen, J, Feldman, LC, Williams, JR, Xu, Y & Garfunkel, E 2012, The effects of phosphorus at the SiO 2/4H-SiC interface. in Materials Science Forum. vol. 717-720, Materials Science Forum, vol. 717-720, pp. 743-746, 14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011, Cleveland, OH, United States, 9/11/11. https://doi.org/10.4028/www.scientific.net/MSF.717-720.743
Sharma YK, Ahyi AC, Issacs-Smith T, Shen X, Pantelides ST, Zhu X et al. The effects of phosphorus at the SiO 2/4H-SiC interface. In Materials Science Forum. Vol. 717-720. 2012. p. 743-746. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.717-720.743
Sharma, Y. K. ; Ahyi, A. C. ; Issacs-Smith, T. ; Shen, X. ; Pantelides, S. T. ; Zhu, X. ; Rozen, J. ; Feldman, Leonard C ; Williams, J. R. ; Xu, Yi ; Garfunkel, Eric. / The effects of phosphorus at the SiO 2/4H-SiC interface. Materials Science Forum. Vol. 717-720 2012. pp. 743-746 (Materials Science Forum).
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AU - Pantelides, S. T.

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AU - Rozen, J.

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AB - Phosphorus passivation of the SiO 2/4H-SiC interface lowers the interface trap density and increases the field effect mobility for N-channel MOSFETs to twice the value of 30-40cm 2/V-s obtained using standard NO nitridation. Passivation using P 2O 5 introduced with an SiP 2O 7 planar diffusion source (PDS) converts the oxide layer to phosphosilicate glass (PSG) which is a polar material. BTS (bias-temperature-stress) measurements with MOS capacitors and FETs show that the benefits of reduced interface trap density and increased mobility are offset by unstable flat band and threshold voltages. This instability can be removed by etching away the PSG oxide and depositing a replacement SiO 2 layer. However, trap densities for etched MOS capacitors are "NO-like" (i.e., higher), which would lead one to expect a lower mobility if MOSFETs are fabricated with the PSG / etch / deposited oxide process.

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