The effects of phosphorus at the SiO 2/4H-SiC interface

Y. K. Sharma, A. C. Ahyi, T. Issacs-Smith, X. Shen, S. T. Pantelides, X. Zhu, J. Rozen, L. C. Feldman, J. R. Williams, Yi Xu, E. Garfunkel

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Phosphorus passivation of the SiO 2/4H-SiC interface lowers the interface trap density and increases the field effect mobility for N-channel MOSFETs to twice the value of 30-40cm 2/V-s obtained using standard NO nitridation. Passivation using P 2O 5 introduced with an SiP 2O 7 planar diffusion source (PDS) converts the oxide layer to phosphosilicate glass (PSG) which is a polar material. BTS (bias-temperature-stress) measurements with MOS capacitors and FETs show that the benefits of reduced interface trap density and increased mobility are offset by unstable flat band and threshold voltages. This instability can be removed by etching away the PSG oxide and depositing a replacement SiO 2 layer. However, trap densities for etched MOS capacitors are "NO-like" (i.e., higher), which would lead one to expect a lower mobility if MOSFETs are fabricated with the PSG / etch / deposited oxide process.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2011, ICSCRM 2011
Pages743-746
Number of pages4
DOIs
Publication statusPublished - May 28 2012
Event14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 - Cleveland, OH, United States
Duration: Sep 11 2011Sep 16 2011

Publication series

NameMaterials Science Forum
Volume717-720
ISSN (Print)0255-5476

Other

Other14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011
CountryUnited States
CityCleveland, OH
Period9/11/119/16/11

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Keywords

  • Channel mobility
  • Interface trap density
  • Phosphorus
  • Threshold voltage stability

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Sharma, Y. K., Ahyi, A. C., Issacs-Smith, T., Shen, X., Pantelides, S. T., Zhu, X., Rozen, J., Feldman, L. C., Williams, J. R., Xu, Y., & Garfunkel, E. (2012). The effects of phosphorus at the SiO 2/4H-SiC interface. In Silicon Carbide and Related Materials 2011, ICSCRM 2011 (pp. 743-746). (Materials Science Forum; Vol. 717-720). https://doi.org/10.4028/www.scientific.net/MSF.717-720.743