The effects of post-oxidation anneal conditions on interface state density near the conduction band edge and inversion channel mobility for SiC MOSFETs

G. Y. Chung, C. C. Tin, J. R. Williams, K. McDonald, M. Di Ventra, S. T. Pantelides, Leonard C Feldman, R. A. Weller

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Results are reported for the passivation of interface states near the conduction band edge in n-4H-SiC using post-oxidation anneals in nitric oxide, ammonia and forming gas (N2/5%H2). Anneals in nitric oxide and ammonia reduce the interface state density significantly, while forming gas anneals are largely ineffective. Results suggest that interface states in SiO2/SiC and SiO2/Si have different origins, and a model is described for interface state passivation by nitrogen in the SiO2/SiC system. The inversion channel mobility of 4H-SiC MOSFETs increases with the NO annealing.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsR.J. Shul, F. Ren, W. Pletschen, M. Murakami
Volume622
Publication statusPublished - 2000
EventWide-Bandgap Electronic Devices - San Francisco, CA, United States
Duration: Apr 24 2000Apr 27 2000

Other

OtherWide-Bandgap Electronic Devices
CountryUnited States
CitySan Francisco, CA
Period4/24/004/27/00

Fingerprint

Interface states
Conduction bands
Oxidation
Nitric oxide
Ammonia
Passivation
Nitric Oxide
Gases
Nitrogen
Annealing

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Chung, G. Y., Tin, C. C., Williams, J. R., McDonald, K., Di Ventra, M., Pantelides, S. T., ... Weller, R. A. (2000). The effects of post-oxidation anneal conditions on interface state density near the conduction band edge and inversion channel mobility for SiC MOSFETs. In R. J. Shul, F. Ren, W. Pletschen, & M. Murakami (Eds.), Materials Research Society Symposium - Proceedings (Vol. 622)

The effects of post-oxidation anneal conditions on interface state density near the conduction band edge and inversion channel mobility for SiC MOSFETs. / Chung, G. Y.; Tin, C. C.; Williams, J. R.; McDonald, K.; Di Ventra, M.; Pantelides, S. T.; Feldman, Leonard C; Weller, R. A.

Materials Research Society Symposium - Proceedings. ed. / R.J. Shul; F. Ren; W. Pletschen; M. Murakami. Vol. 622 2000.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chung, GY, Tin, CC, Williams, JR, McDonald, K, Di Ventra, M, Pantelides, ST, Feldman, LC & Weller, RA 2000, The effects of post-oxidation anneal conditions on interface state density near the conduction band edge and inversion channel mobility for SiC MOSFETs. in RJ Shul, F Ren, W Pletschen & M Murakami (eds), Materials Research Society Symposium - Proceedings. vol. 622, Wide-Bandgap Electronic Devices, San Francisco, CA, United States, 4/24/00.
Chung GY, Tin CC, Williams JR, McDonald K, Di Ventra M, Pantelides ST et al. The effects of post-oxidation anneal conditions on interface state density near the conduction band edge and inversion channel mobility for SiC MOSFETs. In Shul RJ, Ren F, Pletschen W, Murakami M, editors, Materials Research Society Symposium - Proceedings. Vol. 622. 2000
Chung, G. Y. ; Tin, C. C. ; Williams, J. R. ; McDonald, K. ; Di Ventra, M. ; Pantelides, S. T. ; Feldman, Leonard C ; Weller, R. A. / The effects of post-oxidation anneal conditions on interface state density near the conduction band edge and inversion channel mobility for SiC MOSFETs. Materials Research Society Symposium - Proceedings. editor / R.J. Shul ; F. Ren ; W. Pletschen ; M. Murakami. Vol. 622 2000.
@inproceedings{d0e68c8d2f27434b91f47ded99fe266a,
title = "The effects of post-oxidation anneal conditions on interface state density near the conduction band edge and inversion channel mobility for SiC MOSFETs",
abstract = "Results are reported for the passivation of interface states near the conduction band edge in n-4H-SiC using post-oxidation anneals in nitric oxide, ammonia and forming gas (N2/5{\%}H2). Anneals in nitric oxide and ammonia reduce the interface state density significantly, while forming gas anneals are largely ineffective. Results suggest that interface states in SiO2/SiC and SiO2/Si have different origins, and a model is described for interface state passivation by nitrogen in the SiO2/SiC system. The inversion channel mobility of 4H-SiC MOSFETs increases with the NO annealing.",
author = "Chung, {G. Y.} and Tin, {C. C.} and Williams, {J. R.} and K. McDonald and {Di Ventra}, M. and Pantelides, {S. T.} and Feldman, {Leonard C} and Weller, {R. A.}",
year = "2000",
language = "English",
volume = "622",
editor = "R.J. Shul and F. Ren and W. Pletschen and M. Murakami",
booktitle = "Materials Research Society Symposium - Proceedings",

}

TY - GEN

T1 - The effects of post-oxidation anneal conditions on interface state density near the conduction band edge and inversion channel mobility for SiC MOSFETs

AU - Chung, G. Y.

AU - Tin, C. C.

AU - Williams, J. R.

AU - McDonald, K.

AU - Di Ventra, M.

AU - Pantelides, S. T.

AU - Feldman, Leonard C

AU - Weller, R. A.

PY - 2000

Y1 - 2000

N2 - Results are reported for the passivation of interface states near the conduction band edge in n-4H-SiC using post-oxidation anneals in nitric oxide, ammonia and forming gas (N2/5%H2). Anneals in nitric oxide and ammonia reduce the interface state density significantly, while forming gas anneals are largely ineffective. Results suggest that interface states in SiO2/SiC and SiO2/Si have different origins, and a model is described for interface state passivation by nitrogen in the SiO2/SiC system. The inversion channel mobility of 4H-SiC MOSFETs increases with the NO annealing.

AB - Results are reported for the passivation of interface states near the conduction band edge in n-4H-SiC using post-oxidation anneals in nitric oxide, ammonia and forming gas (N2/5%H2). Anneals in nitric oxide and ammonia reduce the interface state density significantly, while forming gas anneals are largely ineffective. Results suggest that interface states in SiO2/SiC and SiO2/Si have different origins, and a model is described for interface state passivation by nitrogen in the SiO2/SiC system. The inversion channel mobility of 4H-SiC MOSFETs increases with the NO annealing.

UR - http://www.scopus.com/inward/record.url?scp=0034430767&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034430767&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0034430767

VL - 622

BT - Materials Research Society Symposium - Proceedings

A2 - Shul, R.J.

A2 - Ren, F.

A2 - Pletschen, W.

A2 - Murakami, M.

ER -