The effects of post-oxidation anneal conditions on interface state density near the conduction band edge and inversion channel mobility for SiC MOSFETs

G. Y. Chung, C. C. Tin, J. R. Williams, K. McDonald, M. Di Ventra, S. T. Pantelides, L. C. Feldman, R. A. Weller

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Abstract

Results are reported for the passivation of interface states near the conduction band edge in n-4H-SiC using post-oxidation anneals in nitric oxide, ammonia and forming gas (N2/5%H2). Anneals in nitric oxide and ammonia reduce the interface state density significantly, while forming gas anneals are largely ineffective. Results suggest that interface states in SiO2/SiC and SiO2/Si have different origins, and a model is described for interface state passivation by nitrogen in the SiO2/SiC system. The inversion channel mobility of 4H-SiC MOSFETs increases with the NO annealing.

Original languageEnglish
Pages (from-to)T871-T877
JournalMaterials Research Society Symposium-Proceedings
Volume622
Publication statusPublished - Jan 1 2000

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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