The growth of (001) YBa2Cu3O(7-δ) thin films on (001) MgO by pulsed organo-metallic beam epitaxy with controlled in-plane orientation

D. B. Buchholz, J. S. Lei, S. Mahajan, P. R. Markworth, R. P.H. Chang, B. Hinds, T. J. Marks, Y. Huang, K. L. Merkle

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2 Citations (Scopus)

Abstract

Thin films of (001) YBCO are grown on epitaxially polished (001) MgO by pulsed organo-metallic beam epitaxy. The in-plane orientation of the film is controlled by the thickness of a BaO layer, grown in situ, prior to the YBCO growth. For thin BaO layers (<≈0.7×1015 Ba cm-2) the films grow [110]YBCO∥[100]MgO. For thick BaO layers (>≈1.1×1015 Ba cm-2) the films grow [100]YBCO∥[100]MgO. For YBCO films grown with thin BaO layers (>≈0.7 times 1015 Ba cm-2), ex situ, low energy Ar+ ion sputtering of the MgO surface prior to film growth will also induce a change of in-plane orientation from [100]YBCO∥[100]MgO on epitaxial polished MgO to [100]YBCO∥[100]MgO on Ar+ sputtered MgO. A mechanism that relates the change in YBCO in-plane orientation to a change in the structure of the initial BaO layers with BaO thickness is described.

Original languageEnglish
Pages (from-to)278-283
Number of pages6
JournalJournal of Alloys and Compounds
Volume251
Issue number1-2
DOIs
Publication statusPublished - Apr 1997

Keywords

  • Pulsed organo-metallic beam-epitaxy
  • YBCO

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

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