The growth of (001) YBa2Cu3O(7-δ) thin films on (001) MgO by pulsed organo-metallic beam epitaxy with controlled in-plane orientation

D. B. Buchholz, J. S. Lei, S. Mahajan, P. R. Markworth, Robert P. H. Chang, B. Hinds, Tobin J Marks, Y. Huang, K. L. Merkle

Research output: Contribution to journalArticle

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Abstract

Thin films of (001) YBCO are grown on epitaxially polished (001) MgO by pulsed organo-metallic beam epitaxy. The in-plane orientation of the film is controlled by the thickness of a BaO layer, grown in situ, prior to the YBCO growth. For thin BaO layers (15 Ba cm-2) the films grow [110]YBCO∥[100]MgO. For thick BaO layers (>≈1.1×1015 Ba cm-2) the films grow [100]YBCO∥[100]MgO. For YBCO films grown with thin BaO layers (>≈0.7 times 1015 Ba cm-2), ex situ, low energy Ar+ ion sputtering of the MgO surface prior to film growth will also induce a change of in-plane orientation from [100]YBCO∥[100]MgO on epitaxial polished MgO to [100]YBCO∥[100]MgO on Ar+ sputtered MgO. A mechanism that relates the change in YBCO in-plane orientation to a change in the structure of the initial BaO layers with BaO thickness is described.

Original languageEnglish
Pages (from-to)278-283
Number of pages6
JournalJournal of Alloys and Compounds
Volume251
Issue number1-2
Publication statusPublished - Apr 1997

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Epitaxial growth
Crystal orientation
Thin films
Film growth
Sputtering
Ions

Keywords

  • Pulsed organo-metallic beam-epitaxy
  • YBCO

ASJC Scopus subject areas

  • Metals and Alloys

Cite this

The growth of (001) YBa2Cu3O(7-δ) thin films on (001) MgO by pulsed organo-metallic beam epitaxy with controlled in-plane orientation. / Buchholz, D. B.; Lei, J. S.; Mahajan, S.; Markworth, P. R.; Chang, Robert P. H.; Hinds, B.; Marks, Tobin J; Huang, Y.; Merkle, K. L.

In: Journal of Alloys and Compounds, Vol. 251, No. 1-2, 04.1997, p. 278-283.

Research output: Contribution to journalArticle

Buchholz, D. B. ; Lei, J. S. ; Mahajan, S. ; Markworth, P. R. ; Chang, Robert P. H. ; Hinds, B. ; Marks, Tobin J ; Huang, Y. ; Merkle, K. L. / The growth of (001) YBa2Cu3O(7-δ) thin films on (001) MgO by pulsed organo-metallic beam epitaxy with controlled in-plane orientation. In: Journal of Alloys and Compounds. 1997 ; Vol. 251, No. 1-2. pp. 278-283.
@article{36684db8de5343d89c28a72895c6d260,
title = "The growth of (001) YBa2Cu3O(7-δ) thin films on (001) MgO by pulsed organo-metallic beam epitaxy with controlled in-plane orientation",
abstract = "Thin films of (001) YBCO are grown on epitaxially polished (001) MgO by pulsed organo-metallic beam epitaxy. The in-plane orientation of the film is controlled by the thickness of a BaO layer, grown in situ, prior to the YBCO growth. For thin BaO layers (15 Ba cm-2) the films grow [110]YBCO∥[100]MgO. For thick BaO layers (>≈1.1×1015 Ba cm-2) the films grow [100]YBCO∥[100]MgO. For YBCO films grown with thin BaO layers (>≈0.7 times 1015 Ba cm-2), ex situ, low energy Ar+ ion sputtering of the MgO surface prior to film growth will also induce a change of in-plane orientation from [100]YBCO∥[100]MgO on epitaxial polished MgO to [100]YBCO∥[100]MgO on Ar+ sputtered MgO. A mechanism that relates the change in YBCO in-plane orientation to a change in the structure of the initial BaO layers with BaO thickness is described.",
keywords = "Pulsed organo-metallic beam-epitaxy, YBCO",
author = "Buchholz, {D. B.} and Lei, {J. S.} and S. Mahajan and Markworth, {P. R.} and Chang, {Robert P. H.} and B. Hinds and Marks, {Tobin J} and Y. Huang and Merkle, {K. L.}",
year = "1997",
month = "4",
language = "English",
volume = "251",
pages = "278--283",
journal = "Journal of Alloys and Compounds",
issn = "0925-8388",
publisher = "Elsevier BV",
number = "1-2",

}

TY - JOUR

T1 - The growth of (001) YBa2Cu3O(7-δ) thin films on (001) MgO by pulsed organo-metallic beam epitaxy with controlled in-plane orientation

AU - Buchholz, D. B.

AU - Lei, J. S.

AU - Mahajan, S.

AU - Markworth, P. R.

AU - Chang, Robert P. H.

AU - Hinds, B.

AU - Marks, Tobin J

AU - Huang, Y.

AU - Merkle, K. L.

PY - 1997/4

Y1 - 1997/4

N2 - Thin films of (001) YBCO are grown on epitaxially polished (001) MgO by pulsed organo-metallic beam epitaxy. The in-plane orientation of the film is controlled by the thickness of a BaO layer, grown in situ, prior to the YBCO growth. For thin BaO layers (15 Ba cm-2) the films grow [110]YBCO∥[100]MgO. For thick BaO layers (>≈1.1×1015 Ba cm-2) the films grow [100]YBCO∥[100]MgO. For YBCO films grown with thin BaO layers (>≈0.7 times 1015 Ba cm-2), ex situ, low energy Ar+ ion sputtering of the MgO surface prior to film growth will also induce a change of in-plane orientation from [100]YBCO∥[100]MgO on epitaxial polished MgO to [100]YBCO∥[100]MgO on Ar+ sputtered MgO. A mechanism that relates the change in YBCO in-plane orientation to a change in the structure of the initial BaO layers with BaO thickness is described.

AB - Thin films of (001) YBCO are grown on epitaxially polished (001) MgO by pulsed organo-metallic beam epitaxy. The in-plane orientation of the film is controlled by the thickness of a BaO layer, grown in situ, prior to the YBCO growth. For thin BaO layers (15 Ba cm-2) the films grow [110]YBCO∥[100]MgO. For thick BaO layers (>≈1.1×1015 Ba cm-2) the films grow [100]YBCO∥[100]MgO. For YBCO films grown with thin BaO layers (>≈0.7 times 1015 Ba cm-2), ex situ, low energy Ar+ ion sputtering of the MgO surface prior to film growth will also induce a change of in-plane orientation from [100]YBCO∥[100]MgO on epitaxial polished MgO to [100]YBCO∥[100]MgO on Ar+ sputtered MgO. A mechanism that relates the change in YBCO in-plane orientation to a change in the structure of the initial BaO layers with BaO thickness is described.

KW - Pulsed organo-metallic beam-epitaxy

KW - YBCO

UR - http://www.scopus.com/inward/record.url?scp=0031119932&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031119932&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0031119932

VL - 251

SP - 278

EP - 283

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

SN - 0925-8388

IS - 1-2

ER -