The growth of silicon nitride crystalline films using microwave plasma enhanced chemical vapor deposition

K. J. Grannen, F. Xiang, Robert P. H. Chang

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Crystalline thin films of silicon nitride have been grown on a variety of substrates by microwave plasma-enhanced chemical vapor deposition using N2, O2, and CH4 gases at a temperature of 800 °C. X-ray diffraction and Rutherford backscattering measurements indicate the deposits are stoichiometric silicon nitride with varying amounts of the a and β phases. Scanning electron microscopy imaging indicates β—Si3N4 possesses sixfold symmetry with particle sizes in the submicron range. In one experiment, the silicon necessary for growth comes from the single crystal silicon substrate due to etching/sputtering by the nitrogen plasma. The dependence of the grain size on the methane concentration is investigated. In another experiment, an organo-silicon source, methoxytrimethylsilane, is used to grow silicon nitride with controlled introduction of the silicon necessary for growth. Thin crystalline films are deposited at rates of 0.1 μm/h as determined by profilometry. A growth mechanism for both cases is proposed.

Original languageEnglish
Pages (from-to)2341-2348
Number of pages8
JournalJournal of Materials Research
Volume9
Issue number9
DOIs
Publication statusPublished - 1994

Fingerprint

Silicon
Plasma enhanced chemical vapor deposition
Silicon nitride
silicon nitrides
Microwaves
vapor deposition
Crystalline materials
microwaves
silicon
Nitrogen plasma
Profilometry
nitrogen plasma
Methane
Rutherford backscattering spectroscopy
Substrates
Sputtering
Etching
backscattering
methane
Deposits

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

The growth of silicon nitride crystalline films using microwave plasma enhanced chemical vapor deposition. / Grannen, K. J.; Xiang, F.; Chang, Robert P. H.

In: Journal of Materials Research, Vol. 9, No. 9, 1994, p. 2341-2348.

Research output: Contribution to journalArticle

@article{c02aa5d360394ebdabd15865865bb90a,
title = "The growth of silicon nitride crystalline films using microwave plasma enhanced chemical vapor deposition",
abstract = "Crystalline thin films of silicon nitride have been grown on a variety of substrates by microwave plasma-enhanced chemical vapor deposition using N2, O2, and CH4 gases at a temperature of 800 °C. X-ray diffraction and Rutherford backscattering measurements indicate the deposits are stoichiometric silicon nitride with varying amounts of the a and β phases. Scanning electron microscopy imaging indicates β—Si3N4 possesses sixfold symmetry with particle sizes in the submicron range. In one experiment, the silicon necessary for growth comes from the single crystal silicon substrate due to etching/sputtering by the nitrogen plasma. The dependence of the grain size on the methane concentration is investigated. In another experiment, an organo-silicon source, methoxytrimethylsilane, is used to grow silicon nitride with controlled introduction of the silicon necessary for growth. Thin crystalline films are deposited at rates of 0.1 μm/h as determined by profilometry. A growth mechanism for both cases is proposed.",
author = "Grannen, {K. J.} and F. Xiang and Chang, {Robert P. H.}",
year = "1994",
doi = "10.1557/JMR.1994.2341",
language = "English",
volume = "9",
pages = "2341--2348",
journal = "Journal of Materials Research",
issn = "0884-2914",
publisher = "Materials Research Society",
number = "9",

}

TY - JOUR

T1 - The growth of silicon nitride crystalline films using microwave plasma enhanced chemical vapor deposition

AU - Grannen, K. J.

AU - Xiang, F.

AU - Chang, Robert P. H.

PY - 1994

Y1 - 1994

N2 - Crystalline thin films of silicon nitride have been grown on a variety of substrates by microwave plasma-enhanced chemical vapor deposition using N2, O2, and CH4 gases at a temperature of 800 °C. X-ray diffraction and Rutherford backscattering measurements indicate the deposits are stoichiometric silicon nitride with varying amounts of the a and β phases. Scanning electron microscopy imaging indicates β—Si3N4 possesses sixfold symmetry with particle sizes in the submicron range. In one experiment, the silicon necessary for growth comes from the single crystal silicon substrate due to etching/sputtering by the nitrogen plasma. The dependence of the grain size on the methane concentration is investigated. In another experiment, an organo-silicon source, methoxytrimethylsilane, is used to grow silicon nitride with controlled introduction of the silicon necessary for growth. Thin crystalline films are deposited at rates of 0.1 μm/h as determined by profilometry. A growth mechanism for both cases is proposed.

AB - Crystalline thin films of silicon nitride have been grown on a variety of substrates by microwave plasma-enhanced chemical vapor deposition using N2, O2, and CH4 gases at a temperature of 800 °C. X-ray diffraction and Rutherford backscattering measurements indicate the deposits are stoichiometric silicon nitride with varying amounts of the a and β phases. Scanning electron microscopy imaging indicates β—Si3N4 possesses sixfold symmetry with particle sizes in the submicron range. In one experiment, the silicon necessary for growth comes from the single crystal silicon substrate due to etching/sputtering by the nitrogen plasma. The dependence of the grain size on the methane concentration is investigated. In another experiment, an organo-silicon source, methoxytrimethylsilane, is used to grow silicon nitride with controlled introduction of the silicon necessary for growth. Thin crystalline films are deposited at rates of 0.1 μm/h as determined by profilometry. A growth mechanism for both cases is proposed.

UR - http://www.scopus.com/inward/record.url?scp=84972034220&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84972034220&partnerID=8YFLogxK

U2 - 10.1557/JMR.1994.2341

DO - 10.1557/JMR.1994.2341

M3 - Article

VL - 9

SP - 2341

EP - 2348

JO - Journal of Materials Research

JF - Journal of Materials Research

SN - 0884-2914

IS - 9

ER -