Abstract
Crystalline thin films of silicon nitride have been grown on a variety of substrates by microwave plasma-enhanced chemical vapor deposition using N2, O2, and CH4 gases at a temperature of 800 °C. X-ray diffraction and Rutherford backscattering measurements indicate the deposits are stoichiometric silicon nitride with varying amounts of the a and β phases. Scanning electron microscopy imaging indicates β—Si3N4 possesses sixfold symmetry with particle sizes in the submicron range. In one experiment, the silicon necessary for growth comes from the single crystal silicon substrate due to etching/sputtering by the nitrogen plasma. The dependence of the grain size on the methane concentration is investigated. In another experiment, an organo-silicon source, methoxytrimethylsilane, is used to grow silicon nitride with controlled introduction of the silicon necessary for growth. Thin crystalline films are deposited at rates of 0.1 μm/h as determined by profilometry. A growth mechanism for both cases is proposed.
| Original language | English |
|---|---|
| Pages (from-to) | 2341-2348 |
| Number of pages | 8 |
| Journal | Journal of Materials Research |
| Volume | 9 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 1994 |
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ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Condensed Matter Physics
- Mechanical Engineering
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The growth of silicon nitride crystalline films using microwave plasma enhanced chemical vapor deposition. / Grannen, K. J.; Xiang, F.; Chang, Robert P. H.
In: Journal of Materials Research, Vol. 9, No. 9, 1994, p. 2341-2348.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - The growth of silicon nitride crystalline films using microwave plasma enhanced chemical vapor deposition
AU - Grannen, K. J.
AU - Xiang, F.
AU - Chang, Robert P. H.
PY - 1994
Y1 - 1994
N2 - Crystalline thin films of silicon nitride have been grown on a variety of substrates by microwave plasma-enhanced chemical vapor deposition using N2, O2, and CH4 gases at a temperature of 800 °C. X-ray diffraction and Rutherford backscattering measurements indicate the deposits are stoichiometric silicon nitride with varying amounts of the a and β phases. Scanning electron microscopy imaging indicates β—Si3N4 possesses sixfold symmetry with particle sizes in the submicron range. In one experiment, the silicon necessary for growth comes from the single crystal silicon substrate due to etching/sputtering by the nitrogen plasma. The dependence of the grain size on the methane concentration is investigated. In another experiment, an organo-silicon source, methoxytrimethylsilane, is used to grow silicon nitride with controlled introduction of the silicon necessary for growth. Thin crystalline films are deposited at rates of 0.1 μm/h as determined by profilometry. A growth mechanism for both cases is proposed.
AB - Crystalline thin films of silicon nitride have been grown on a variety of substrates by microwave plasma-enhanced chemical vapor deposition using N2, O2, and CH4 gases at a temperature of 800 °C. X-ray diffraction and Rutherford backscattering measurements indicate the deposits are stoichiometric silicon nitride with varying amounts of the a and β phases. Scanning electron microscopy imaging indicates β—Si3N4 possesses sixfold symmetry with particle sizes in the submicron range. In one experiment, the silicon necessary for growth comes from the single crystal silicon substrate due to etching/sputtering by the nitrogen plasma. The dependence of the grain size on the methane concentration is investigated. In another experiment, an organo-silicon source, methoxytrimethylsilane, is used to grow silicon nitride with controlled introduction of the silicon necessary for growth. Thin crystalline films are deposited at rates of 0.1 μm/h as determined by profilometry. A growth mechanism for both cases is proposed.
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U2 - 10.1557/JMR.1994.2341
DO - 10.1557/JMR.1994.2341
M3 - Article
VL - 9
SP - 2341
EP - 2348
JO - Journal of Materials Research
JF - Journal of Materials Research
SN - 0884-2914
IS - 9
ER -