The influence of reconstruction on epitaxial growth: Ge on Si(100)-(2 × 1) and Si(111)-(7 × 7)

H. J. Gossmann, Leonard C Feldman, W. M. Gibson

Research output: Contribution to journalArticle

107 Citations (Scopus)

Abstract

The initial stages of interface formation in the Si(100)-(2 × 1)/Ge and Si(111)-(7 × 7)/Ge systems are investigated using Rutherford Backscattering/Channeling techniques supported by Auger electron spectroscopy and low energy electron diffraction (LEED). For deposition at 300 K the Ge forms a sharp but highly disordered overlayer with no indication of islanding or indiffusion. The Ge deposition at 300 K relieves the reconstruction of the Si(100) but not of the Si(111) surface. This difference is interpreted in terms of structural models for these two surfaces. The surface reordering is investigated as a function of deposition temperature and predeposited deuterium coverage. A large body of data supports the model of a temperature-activated chemisorption-induced reordering in which each layer of Ge relieves each layer of Si reconstruction.

Original languageEnglish
Pages (from-to)413-431
Number of pages19
JournalSurface Science
Volume155
Issue number2-3
DOIs
Publication statusPublished - Jun 2 1985

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Epitaxial growth
Low energy electron diffraction
Deuterium
Rutherford backscattering spectroscopy
Auger electron spectroscopy
Chemisorption
chemisorption
Auger spectroscopy
electron spectroscopy
deuterium
backscattering
indication
electron diffraction
Temperature
temperature
energy

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

The influence of reconstruction on epitaxial growth : Ge on Si(100)-(2 × 1) and Si(111)-(7 × 7). / Gossmann, H. J.; Feldman, Leonard C; Gibson, W. M.

In: Surface Science, Vol. 155, No. 2-3, 02.06.1985, p. 413-431.

Research output: Contribution to journalArticle

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