The influence of SiC/SiO2 interface morphology on the electrical characteristics of SiC MOS structures

L. Liu, C. Jiao, Y. Xu, G. Liu, Leonard C Feldman, S. Dhar

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The effect of roughness at the SiC/SiO2 interface on electrical properties of 4H-SiC MOS devices has been investigated. Variations in surface roughness were generated by annealing 4H-SiC samples at high temperatures (1550°C-1650°C) with or without a graphitic cap layer. Subsequently, gate oxides were grown on these surfaces for n-type MOS capacitors and n-channel MOSFETs were fabricated. Although the interfaces demonstrated significantly different surface morphology, interface state density (Dit) measured on the capacitors were almost identical. This was reflected in the MOSFET characteristics where, to first order, no obvious difference in field-effect mobility was observed. This result verifies that long range roughness (in the micron scale) does not affect mobility of channel electrons where the mean free path is of the order of a ∼ 1 nm due to the low inversion layer mobility.

Original languageEnglish
Title of host publication2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages103-106
Number of pages4
ISBN (Print)9781479954933
DOIs
Publication statusPublished - Nov 20 2014
Event2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014 - Knoxville, United States
Duration: Oct 13 2014Oct 15 2014

Other

Other2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014
CountryUnited States
CityKnoxville
Period10/13/1410/15/14

Fingerprint

Surface roughness
MOS capacitors
Inversion layers
MOS devices
Interface states
Surface morphology
Electric properties
Capacitors
Annealing
Oxides
Electrons
Temperature

Keywords

  • 4H-SiC
  • interface states
  • mobility
  • roughness
  • surface morphology

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications

Cite this

Liu, L., Jiao, C., Xu, Y., Liu, G., Feldman, L. C., & Dhar, S. (2014). The influence of SiC/SiO2 interface morphology on the electrical characteristics of SiC MOS structures. In 2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014 (pp. 103-106). [6964633] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/WiPDA.2014.6964633

The influence of SiC/SiO2 interface morphology on the electrical characteristics of SiC MOS structures. / Liu, L.; Jiao, C.; Xu, Y.; Liu, G.; Feldman, Leonard C; Dhar, S.

2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 103-106 6964633.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Liu, L, Jiao, C, Xu, Y, Liu, G, Feldman, LC & Dhar, S 2014, The influence of SiC/SiO2 interface morphology on the electrical characteristics of SiC MOS structures. in 2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014., 6964633, Institute of Electrical and Electronics Engineers Inc., pp. 103-106, 2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014, Knoxville, United States, 10/13/14. https://doi.org/10.1109/WiPDA.2014.6964633
Liu L, Jiao C, Xu Y, Liu G, Feldman LC, Dhar S. The influence of SiC/SiO2 interface morphology on the electrical characteristics of SiC MOS structures. In 2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 103-106. 6964633 https://doi.org/10.1109/WiPDA.2014.6964633
Liu, L. ; Jiao, C. ; Xu, Y. ; Liu, G. ; Feldman, Leonard C ; Dhar, S. / The influence of SiC/SiO2 interface morphology on the electrical characteristics of SiC MOS structures. 2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 103-106
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