Abstract
We present new results on the SiO2/Si system obtained by high resolution medium energy ion scattering. Isotopic labeling experiments demonstrate that the traditional Deal Grove and related models fail for sub-10 nm films. Any realistic model in this ultra-thin film region should include near-interfacial and surface exchange reactions. We also observed that the surface can be roughened during oxidation. Simple models explaining the genesis of roughness during active oxidation and in a transition regime between active and passive oxidation are given, based on relative rates of various surface processes.
| Original language | English |
|---|---|
| Pages (from-to) | 329-334 |
| Number of pages | 6 |
| Journal | Applied Surface Science |
| Volume | 104-105 |
| DOIs | |
| Publication status | Published - Sep 1996 |
ASJC Scopus subject areas
- Physical and Theoretical Chemistry
- Surfaces, Coatings and Films
- Condensed Matter Physics
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Gusev, E. P., Lu, H. C., Gustafsson, T., & Garfunkel, E. (1996). The initial oxidation of silicon: New ion scattering results in the ultra-thin regime. Applied Surface Science, 104-105, 329-334. https://doi.org/10.1016/S0169-4332(96)00166-3