The initial oxidation of silicon: New ion scattering results in the ultra-thin regime

E. P. Gusev, H. C. Lu, T. Gustafsson, Eric Garfunkel

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

We present new results on the SiO2/Si system obtained by high resolution medium energy ion scattering. Isotopic labeling experiments demonstrate that the traditional Deal Grove and related models fail for sub-10 nm films. Any realistic model in this ultra-thin film region should include near-interfacial and surface exchange reactions. We also observed that the surface can be roughened during oxidation. Simple models explaining the genesis of roughness during active oxidation and in a transition regime between active and passive oxidation are given, based on relative rates of various surface processes.

Original languageEnglish
Pages (from-to)329-334
Number of pages6
JournalApplied Surface Science
Volume104-105
DOIs
Publication statusPublished - Sep 1996

Fingerprint

ion scattering
Silicon
Scattering
Ions
Oxidation
oxidation
silicon
isotopic labeling
Ultrathin films
Labeling
roughness
Surface roughness
high resolution
thin films
Experiments
energy

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

Cite this

The initial oxidation of silicon : New ion scattering results in the ultra-thin regime. / Gusev, E. P.; Lu, H. C.; Gustafsson, T.; Garfunkel, Eric.

In: Applied Surface Science, Vol. 104-105, 09.1996, p. 329-334.

Research output: Contribution to journalArticle

Gusev, E. P. ; Lu, H. C. ; Gustafsson, T. ; Garfunkel, Eric. / The initial oxidation of silicon : New ion scattering results in the ultra-thin regime. In: Applied Surface Science. 1996 ; Vol. 104-105. pp. 329-334.
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