TY - JOUR
T1 - The initial oxidation of silicon
T2 - New ion scattering results in the ultra-thin regime
AU - Gusev, E. P.
AU - Lu, H. C.
AU - Gustafsson, T.
AU - Garfunkel, E.
N1 - Funding Information:
The authors acknowledgev aluabled iscussions with D. BuchananL, .C. Feldman,a nd M.L. Green and their help in samplep reparationT.h e work is supportedb y NSF (DMR-9408578)P, RF (28788-AC5) and NJ AIMS grants.
PY - 1996/9
Y1 - 1996/9
N2 - We present new results on the SiO 2 /Si system obtained by high resolution medium energy ion scattering. Isotopic labeling experiments demonstrate that the traditional Deal Grove and related models fail for sub-10 nm films. Any realistic model in this ultra-thin film region should include near-interfacial and surface exchange reactions. We also observed that the surface can be roughened during oxidation. Simple models explaining the genesis of roughness during active oxidation and in a transition regime between active and passive oxidation are given, based on relative rates of various surface processes.
AB - We present new results on the SiO 2 /Si system obtained by high resolution medium energy ion scattering. Isotopic labeling experiments demonstrate that the traditional Deal Grove and related models fail for sub-10 nm films. Any realistic model in this ultra-thin film region should include near-interfacial and surface exchange reactions. We also observed that the surface can be roughened during oxidation. Simple models explaining the genesis of roughness during active oxidation and in a transition regime between active and passive oxidation are given, based on relative rates of various surface processes.
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U2 - 10.1016/S0169-4332(96)00166-3
DO - 10.1016/S0169-4332(96)00166-3
M3 - Article
AN - SCOPUS:0030233513
VL - 104-105
SP - 329
EP - 334
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
ER -