The initial oxidation of silicon: New ion scattering results in the ultra-thin regime

E. P. Gusev; H. C. Lu; T. Gustafsson; Eric Garfunkel

doi:10.1016/S0169-4332(96)00166-3

The initial oxidation of silicon: New ion scattering results in the ultra-thin regime

E. P. Gusev, H. C. Lu, T. Gustafsson, Eric Garfunkel

Rutgers University

Research output: Contribution to journal › Article

18 Citations (Scopus)

Abstract

We present new results on the SiO₂/Si system obtained by high resolution medium energy ion scattering. Isotopic labeling experiments demonstrate that the traditional Deal Grove and related models fail for sub-10 nm films. Any realistic model in this ultra-thin film region should include near-interfacial and surface exchange reactions. We also observed that the surface can be roughened during oxidation. Simple models explaining the genesis of roughness during active oxidation and in a transition regime between active and passive oxidation are given, based on relative rates of various surface processes.

Original language	English
Pages (from-to)	329-334
Number of pages	6
Journal	Applied Surface Science
Volume	104-105
DOIs	https://doi.org/10.1016/S0169-4332(96)00166-3
Publication status	Published - Sep 1996

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ASJC Scopus subject areas

Physical and Theoretical Chemistry
Surfaces, Coatings and Films
Condensed Matter Physics

Cite this

Gusev, E. P., Lu, H. C., Gustafsson, T., & Garfunkel, E. (1996). The initial oxidation of silicon: New ion scattering results in the ultra-thin regime. Applied Surface Science, 104-105, 329-334. https://doi.org/10.1016/S0169-4332(96)00166-3

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10.1016/S0169-4332(96)00166-3