Abstract
We present new results on the SiO2/Si system obtained by high resolution medium energy ion scattering. Isotopic labeling experiments demonstrate that the traditional Deal Grove and related models fail for sub-10 nm films. Any realistic model in this ultra-thin film region should include near-interfacial and surface exchange reactions. We also observed that the surface can be roughened during oxidation. Simple models explaining the genesis of roughness during active oxidation and in a transition regime between active and passive oxidation are given, based on relative rates of various surface processes.
Original language | English |
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Pages (from-to) | 329-334 |
Number of pages | 6 |
Journal | Applied Surface Science |
Volume | 104-105 |
DOIs | |
Publication status | Published - Sep 1996 |
ASJC Scopus subject areas
- Physical and Theoretical Chemistry
- Surfaces, Coatings and Films
- Condensed Matter Physics