Abstract
We present new results on the SiO2/Si system obtained by high resolution medium energy ion scattering. Isotopic labeling experiments demonstrate that the traditional Deal Grove and related models fail for sub-10 nm films. Any realistic model in this ultra-thin film region should include near-interfacial and surface exchange reactions. We also observed that the surface can be roughened during oxidation. Simple models explaining the genesis of roughness during active oxidation and in a transition regime between active and passive oxidation are given, based on relative rates of various surface processes.
| Original language | English |
|---|---|
| Pages (from-to) | 329-334 |
| Number of pages | 6 |
| Journal | Applied Surface Science |
| Volume | 104-105 |
| DOIs | |
| Publication status | Published - Sep 1996 |
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ASJC Scopus subject areas
- Physical and Theoretical Chemistry
- Surfaces, Coatings and Films
- Condensed Matter Physics
Cite this
The initial oxidation of silicon : New ion scattering results in the ultra-thin regime. / Gusev, E. P.; Lu, H. C.; Gustafsson, T.; Garfunkel, Eric.
In: Applied Surface Science, Vol. 104-105, 09.1996, p. 329-334.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - The initial oxidation of silicon
T2 - New ion scattering results in the ultra-thin regime
AU - Gusev, E. P.
AU - Lu, H. C.
AU - Gustafsson, T.
AU - Garfunkel, Eric
PY - 1996/9
Y1 - 1996/9
N2 - We present new results on the SiO2/Si system obtained by high resolution medium energy ion scattering. Isotopic labeling experiments demonstrate that the traditional Deal Grove and related models fail for sub-10 nm films. Any realistic model in this ultra-thin film region should include near-interfacial and surface exchange reactions. We also observed that the surface can be roughened during oxidation. Simple models explaining the genesis of roughness during active oxidation and in a transition regime between active and passive oxidation are given, based on relative rates of various surface processes.
AB - We present new results on the SiO2/Si system obtained by high resolution medium energy ion scattering. Isotopic labeling experiments demonstrate that the traditional Deal Grove and related models fail for sub-10 nm films. Any realistic model in this ultra-thin film region should include near-interfacial and surface exchange reactions. We also observed that the surface can be roughened during oxidation. Simple models explaining the genesis of roughness during active oxidation and in a transition regime between active and passive oxidation are given, based on relative rates of various surface processes.
UR - http://www.scopus.com/inward/record.url?scp=0030233513&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0030233513&partnerID=8YFLogxK
U2 - 10.1016/S0169-4332(96)00166-3
DO - 10.1016/S0169-4332(96)00166-3
M3 - Article
AN - SCOPUS:0030233513
VL - 104-105
SP - 329
EP - 334
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
ER -