The initial oxidation of silicon: New ion scattering results in the ultra-thin regime

E. P. Gusev, H. C. Lu, T. Gustafsson, Eric Garfunkel

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18 Citations (Scopus)


We present new results on the SiO2/Si system obtained by high resolution medium energy ion scattering. Isotopic labeling experiments demonstrate that the traditional Deal Grove and related models fail for sub-10 nm films. Any realistic model in this ultra-thin film region should include near-interfacial and surface exchange reactions. We also observed that the surface can be roughened during oxidation. Simple models explaining the genesis of roughness during active oxidation and in a transition regime between active and passive oxidation are given, based on relative rates of various surface processes.

Original languageEnglish
Pages (from-to)329-334
Number of pages6
JournalApplied Surface Science
Publication statusPublished - Sep 1996


ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

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