The limit of non-stoichiometry in silicon carbide

Dunbar P Birnie, W. David Kingery

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

The extent of the silicon carbide single-phase stability field has been investigated. Samples were equilibrated at 2400 ° C by coarsening of fine-grain silicon carbide powder. The lattice parameter, density, and the silicon-to-carbon ratio were measured on silicon- and carbon-saturated samples. These two compositions were not distinguishable at a level of better than one part in one thousand by their molecular weights per mole of crystal sites; no native point defects measurably respond to the difference in silicon activity. The accuracy of the lattice parameter and density measurements require that the free energies of defect pair formation be larger than about 3eV. This applies to antisite pairs, Frenkel pairs and Schottky pairs. It is concluded that silicon carbide is largely stoichiometric. The crystal chemistry must be dominated by electrons, holes and impurities.

Original languageEnglish
Pages (from-to)2827-2834
Number of pages8
JournalJournal of Materials Science
Volume25
Issue number6
DOIs
Publication statusPublished - Jun 1990

Fingerprint

Silicon
Silicon carbide
silicon carbides
Lattice constants
lattice parameters
silicon
Carbon
Crystal chemistry
Phase stability
carbon
Coarsening
Point defects
Powders
point defects
Free energy
crystals
molecular weight
Molecular weight
free energy
Impurities

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)

Cite this

The limit of non-stoichiometry in silicon carbide. / Birnie, Dunbar P; Kingery, W. David.

In: Journal of Materials Science, Vol. 25, No. 6, 06.1990, p. 2827-2834.

Research output: Contribution to journalArticle

Birnie, Dunbar P ; Kingery, W. David. / The limit of non-stoichiometry in silicon carbide. In: Journal of Materials Science. 1990 ; Vol. 25, No. 6. pp. 2827-2834.
@article{358a9787a26d4411bcefaac366eb5910,
title = "The limit of non-stoichiometry in silicon carbide",
abstract = "The extent of the silicon carbide single-phase stability field has been investigated. Samples were equilibrated at 2400 ° C by coarsening of fine-grain silicon carbide powder. The lattice parameter, density, and the silicon-to-carbon ratio were measured on silicon- and carbon-saturated samples. These two compositions were not distinguishable at a level of better than one part in one thousand by their molecular weights per mole of crystal sites; no native point defects measurably respond to the difference in silicon activity. The accuracy of the lattice parameter and density measurements require that the free energies of defect pair formation be larger than about 3eV. This applies to antisite pairs, Frenkel pairs and Schottky pairs. It is concluded that silicon carbide is largely stoichiometric. The crystal chemistry must be dominated by electrons, holes and impurities.",
author = "Birnie, {Dunbar P} and Kingery, {W. David}",
year = "1990",
month = "6",
doi = "10.1007/BF00584888",
language = "English",
volume = "25",
pages = "2827--2834",
journal = "Journal of Materials Science",
issn = "0022-2461",
publisher = "Springer Netherlands",
number = "6",

}

TY - JOUR

T1 - The limit of non-stoichiometry in silicon carbide

AU - Birnie, Dunbar P

AU - Kingery, W. David

PY - 1990/6

Y1 - 1990/6

N2 - The extent of the silicon carbide single-phase stability field has been investigated. Samples were equilibrated at 2400 ° C by coarsening of fine-grain silicon carbide powder. The lattice parameter, density, and the silicon-to-carbon ratio were measured on silicon- and carbon-saturated samples. These two compositions were not distinguishable at a level of better than one part in one thousand by their molecular weights per mole of crystal sites; no native point defects measurably respond to the difference in silicon activity. The accuracy of the lattice parameter and density measurements require that the free energies of defect pair formation be larger than about 3eV. This applies to antisite pairs, Frenkel pairs and Schottky pairs. It is concluded that silicon carbide is largely stoichiometric. The crystal chemistry must be dominated by electrons, holes and impurities.

AB - The extent of the silicon carbide single-phase stability field has been investigated. Samples were equilibrated at 2400 ° C by coarsening of fine-grain silicon carbide powder. The lattice parameter, density, and the silicon-to-carbon ratio were measured on silicon- and carbon-saturated samples. These two compositions were not distinguishable at a level of better than one part in one thousand by their molecular weights per mole of crystal sites; no native point defects measurably respond to the difference in silicon activity. The accuracy of the lattice parameter and density measurements require that the free energies of defect pair formation be larger than about 3eV. This applies to antisite pairs, Frenkel pairs and Schottky pairs. It is concluded that silicon carbide is largely stoichiometric. The crystal chemistry must be dominated by electrons, holes and impurities.

UR - http://www.scopus.com/inward/record.url?scp=0025446410&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025446410&partnerID=8YFLogxK

U2 - 10.1007/BF00584888

DO - 10.1007/BF00584888

M3 - Article

AN - SCOPUS:0025446410

VL - 25

SP - 2827

EP - 2834

JO - Journal of Materials Science

JF - Journal of Materials Science

SN - 0022-2461

IS - 6

ER -