Abstract
We report on the benefits and the shortcomings of the NO annealing process following observations made on capacitors and transistors with various nitrogen densities at the SiO2/SiC interface. While NO annealing leads to a progressively lower interface state density and higher inversion mobility, consistent with Coulomb-limited transport, MOSFET properties are still limited by the relatively poor interface quality. Moreover, NO induces a large amount of hole traps in the oxide. We establish that these properties are not related to the oxidation rate and we discuss them in terms of the nitrogen content.
| Original language | English |
|---|---|
| Title of host publication | Silicon Carbide and Related Materials 2009 |
| Subtitle of host publication | ICSCRM 2009 |
| Publisher | Trans Tech Publications Ltd |
| Pages | 693-696 |
| Number of pages | 4 |
| ISBN (Print) | 0878492798, 9780878492794 |
| DOIs | |
| Publication status | Published - Jan 1 2010 |
| Event | 13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009 - Nurnberg, Germany Duration: Oct 11 2009 → Oct 16 2009 |
Publication series
| Name | Materials Science Forum |
|---|---|
| Volume | 645-648 |
| ISSN (Print) | 0255-5476 |
Other
| Other | 13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009 |
|---|---|
| Country | Germany |
| City | Nurnberg |
| Period | 10/11/09 → 10/16/09 |
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Keywords
- Charge trapping
- Interface states
- Mobility
- NO annealing
- Oxidation
- Reliability
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Cite this
Rozen, J., Zhu, X., Ahyi, A. C., Williams, J. R., & Feldman, L. C. (2010). The limits of post oxidation annealing in NO. In Silicon Carbide and Related Materials 2009: ICSCRM 2009 (pp. 693-696). (Materials Science Forum; Vol. 645-648). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.645-648.693