The limits of post oxidation annealing in NO

John Rozen, Xingguang Zhu, A. C. Ahyi, J. R. Williams, L. C. Feldman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Citations (Scopus)


We report on the benefits and the shortcomings of the NO annealing process following observations made on capacitors and transistors with various nitrogen densities at the SiO2/SiC interface. While NO annealing leads to a progressively lower interface state density and higher inversion mobility, consistent with Coulomb-limited transport, MOSFET properties are still limited by the relatively poor interface quality. Moreover, NO induces a large amount of hole traps in the oxide. We establish that these properties are not related to the oxidation rate and we discuss them in terms of the nitrogen content.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2009
Subtitle of host publicationICSCRM 2009
PublisherTrans Tech Publications Ltd
Number of pages4
ISBN (Print)0878492798, 9780878492794
Publication statusPublished - 2010
Event13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009 - Nurnberg, Germany
Duration: Oct 11 2009Oct 16 2009

Publication series

NameMaterials Science Forum
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752


Other13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009


  • Charge trapping
  • Interface states
  • Mobility
  • NO annealing
  • Oxidation
  • Reliability

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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