The limits of post oxidation annealing in NO

John Rozen, Xingguang Zhu, A. C. Ahyi, J. R. Williams, Leonard C Feldman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Citations (Scopus)

Abstract

We report on the benefits and the shortcomings of the NO annealing process following observations made on capacitors and transistors with various nitrogen densities at the SiO2/SiC interface. While NO annealing leads to a progressively lower interface state density and higher inversion mobility, consistent with Coulomb-limited transport, MOSFET properties are still limited by the relatively poor interface quality. Moreover, NO induces a large amount of hole traps in the oxide. We establish that these properties are not related to the oxidation rate and we discuss them in terms of the nitrogen content.

Original languageEnglish
Title of host publicationMaterials Science Forum
PublisherTrans Tech Publications Ltd
Pages693-696
Number of pages4
Volume645-648
ISBN (Print)0878492798, 9780878492794
DOIs
Publication statusPublished - 2010
Event13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009 - Nurnberg, Germany
Duration: Oct 11 2009Oct 16 2009

Publication series

NameMaterials Science Forum
Volume645-648
ISSN (Print)02555476

Other

Other13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009
CountryGermany
CityNurnberg
Period10/11/0910/16/09

Fingerprint

Nitrogen
Annealing
Hole traps
Oxidation
oxidation
annealing
Interface states
Oxides
nitrogen
Transistors
Capacitors
capacitors
transistors
field effect transistors
traps
inversions
oxides

Keywords

  • Charge trapping
  • Interface states
  • Mobility
  • NO annealing
  • Oxidation
  • Reliability

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Rozen, J., Zhu, X., Ahyi, A. C., Williams, J. R., & Feldman, L. C. (2010). The limits of post oxidation annealing in NO. In Materials Science Forum (Vol. 645-648, pp. 693-696). (Materials Science Forum; Vol. 645-648). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.645-648.693

The limits of post oxidation annealing in NO. / Rozen, John; Zhu, Xingguang; Ahyi, A. C.; Williams, J. R.; Feldman, Leonard C.

Materials Science Forum. Vol. 645-648 Trans Tech Publications Ltd, 2010. p. 693-696 (Materials Science Forum; Vol. 645-648).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Rozen, J, Zhu, X, Ahyi, AC, Williams, JR & Feldman, LC 2010, The limits of post oxidation annealing in NO. in Materials Science Forum. vol. 645-648, Materials Science Forum, vol. 645-648, Trans Tech Publications Ltd, pp. 693-696, 13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009, Nurnberg, Germany, 10/11/09. https://doi.org/10.4028/www.scientific.net/MSF.645-648.693
Rozen J, Zhu X, Ahyi AC, Williams JR, Feldman LC. The limits of post oxidation annealing in NO. In Materials Science Forum. Vol. 645-648. Trans Tech Publications Ltd. 2010. p. 693-696. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.645-648.693
Rozen, John ; Zhu, Xingguang ; Ahyi, A. C. ; Williams, J. R. ; Feldman, Leonard C. / The limits of post oxidation annealing in NO. Materials Science Forum. Vol. 645-648 Trans Tech Publications Ltd, 2010. pp. 693-696 (Materials Science Forum).
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