@inproceedings{e17f7e06ed15473ebc42501ad9573dcd,
title = "The limits of post oxidation annealing in NO",
abstract = "We report on the benefits and the shortcomings of the NO annealing process following observations made on capacitors and transistors with various nitrogen densities at the SiO2/SiC interface. While NO annealing leads to a progressively lower interface state density and higher inversion mobility, consistent with Coulomb-limited transport, MOSFET properties are still limited by the relatively poor interface quality. Moreover, NO induces a large amount of hole traps in the oxide. We establish that these properties are not related to the oxidation rate and we discuss them in terms of the nitrogen content.",
keywords = "Charge trapping, Interface states, Mobility, NO annealing, Oxidation, Reliability",
author = "John Rozen and Xingguang Zhu and Ahyi, {A. C.} and Williams, {J. R.} and Feldman, {L. C.}",
note = "Copyright: Copyright 2020 Elsevier B.V., All rights reserved.; 13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009 ; Conference date: 11-10-2009 Through 16-10-2009",
year = "2010",
doi = "10.4028/www.scientific.net/MSF.645-648.693",
language = "English",
isbn = "0878492798",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "693--696",
booktitle = "Silicon Carbide and Related Materials 2009",
}