Abstract
We report on the benefits and the shortcomings of the NO annealing process following observations made on capacitors and transistors with various nitrogen densities at the SiO2/SiC interface. While NO annealing leads to a progressively lower interface state density and higher inversion mobility, consistent with Coulomb-limited transport, MOSFET properties are still limited by the relatively poor interface quality. Moreover, NO induces a large amount of hole traps in the oxide. We establish that these properties are not related to the oxidation rate and we discuss them in terms of the nitrogen content.
| Original language | English |
|---|---|
| Title of host publication | Materials Science Forum |
| Publisher | Trans Tech Publications Ltd |
| Pages | 693-696 |
| Number of pages | 4 |
| Volume | 645-648 |
| ISBN (Print) | 0878492798, 9780878492794 |
| DOIs | |
| Publication status | Published - 2010 |
| Event | 13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009 - Nurnberg, Germany Duration: Oct 11 2009 → Oct 16 2009 |
Publication series
| Name | Materials Science Forum |
|---|---|
| Volume | 645-648 |
| ISSN (Print) | 02555476 |
Other
| Other | 13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009 |
|---|---|
| Country | Germany |
| City | Nurnberg |
| Period | 10/11/09 → 10/16/09 |
Fingerprint
Keywords
- Charge trapping
- Interface states
- Mobility
- NO annealing
- Oxidation
- Reliability
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanical Engineering
- Mechanics of Materials
Cite this
The limits of post oxidation annealing in NO. / Rozen, John; Zhu, Xingguang; Ahyi, A. C.; Williams, J. R.; Feldman, Leonard C.
Materials Science Forum. Vol. 645-648 Trans Tech Publications Ltd, 2010. p. 693-696 (Materials Science Forum; Vol. 645-648).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - The limits of post oxidation annealing in NO
AU - Rozen, John
AU - Zhu, Xingguang
AU - Ahyi, A. C.
AU - Williams, J. R.
AU - Feldman, Leonard C
PY - 2010
Y1 - 2010
N2 - We report on the benefits and the shortcomings of the NO annealing process following observations made on capacitors and transistors with various nitrogen densities at the SiO2/SiC interface. While NO annealing leads to a progressively lower interface state density and higher inversion mobility, consistent with Coulomb-limited transport, MOSFET properties are still limited by the relatively poor interface quality. Moreover, NO induces a large amount of hole traps in the oxide. We establish that these properties are not related to the oxidation rate and we discuss them in terms of the nitrogen content.
AB - We report on the benefits and the shortcomings of the NO annealing process following observations made on capacitors and transistors with various nitrogen densities at the SiO2/SiC interface. While NO annealing leads to a progressively lower interface state density and higher inversion mobility, consistent with Coulomb-limited transport, MOSFET properties are still limited by the relatively poor interface quality. Moreover, NO induces a large amount of hole traps in the oxide. We establish that these properties are not related to the oxidation rate and we discuss them in terms of the nitrogen content.
KW - Charge trapping
KW - Interface states
KW - Mobility
KW - NO annealing
KW - Oxidation
KW - Reliability
UR - http://www.scopus.com/inward/record.url?scp=77954144148&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77954144148&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/MSF.645-648.693
DO - 10.4028/www.scientific.net/MSF.645-648.693
M3 - Conference contribution
AN - SCOPUS:77954144148
SN - 0878492798
SN - 9780878492794
VL - 645-648
T3 - Materials Science Forum
SP - 693
EP - 696
BT - Materials Science Forum
PB - Trans Tech Publications Ltd
ER -