The limits of post oxidation annealing in NO

John Rozen; Xingguang Zhu; A. C. Ahyi; J. R. Williams; L. C. Feldman

doi:10.4028/www.scientific.net/MSF.645-648.693

The limits of post oxidation annealing in NO

John Rozen, Xingguang Zhu, A. C. Ahyi, J. R. Williams, L. C. Feldman

Rutgers University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

14 Citations (Scopus)

Abstract

We report on the benefits and the shortcomings of the NO annealing process following observations made on capacitors and transistors with various nitrogen densities at the SiO₂/SiC interface. While NO annealing leads to a progressively lower interface state density and higher inversion mobility, consistent with Coulomb-limited transport, MOSFET properties are still limited by the relatively poor interface quality. Moreover, NO induces a large amount of hole traps in the oxide. We establish that these properties are not related to the oxidation rate and we discuss them in terms of the nitrogen content.

Original language	English
Title of host publication	Silicon Carbide and Related Materials 2009
Subtitle of host publication	ICSCRM 2009
Publisher	Trans Tech Publications Ltd
Pages	693-696
Number of pages	4
ISBN (Print)	0878492798, 9780878492794
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.645-648.693
Publication status	Published - Jan 1 2010
Event	13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009 - Nurnberg, Germany Duration: Oct 11 2009 → Oct 16 2009

Publication series

Name	Materials Science Forum
Volume	645-648
ISSN (Print)	0255-5476
ISSN (Electronic)	1662-9752

Other

Other	13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009
Country	Germany
City	Nurnberg
Period	10/11/09 → 10/16/09

Keywords

Charge trapping
Interface states
Mobility
NO annealing
Oxidation
Reliability

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Rozen, J., Zhu, X., Ahyi, A. C., Williams, J. R., & Feldman, L. C. (2010). The limits of post oxidation annealing in NO. In Silicon Carbide and Related Materials 2009: ICSCRM 2009 (pp. 693-696). (Materials Science Forum; Vol. 645-648). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.645-648.693

Rozen, J, Zhu, X, Ahyi, AC, Williams, JR & Feldman, LC 2010, The limits of post oxidation annealing in NO. in Silicon Carbide and Related Materials 2009: ICSCRM 2009. Materials Science Forum, vol. 645-648, Trans Tech Publications Ltd, pp. 693-696, 13th International Conference on Silicon Carbide and Related Materials 2009, ICSCRM 2009, Nurnberg, Germany, 10/11/09. https://doi.org/10.4028/www.scientific.net/MSF.645-648.693

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abstract = "We report on the benefits and the shortcomings of the NO annealing process following observations made on capacitors and transistors with various nitrogen densities at the SiO2/SiC interface. While NO annealing leads to a progressively lower interface state density and higher inversion mobility, consistent with Coulomb-limited transport, MOSFET properties are still limited by the relatively poor interface quality. Moreover, NO induces a large amount of hole traps in the oxide. We establish that these properties are not related to the oxidation rate and we discuss them in terms of the nitrogen content.",

keywords = "Charge trapping, Interface states, Mobility, NO annealing, Oxidation, Reliability",

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AU - Zhu, Xingguang

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N2 - We report on the benefits and the shortcomings of the NO annealing process following observations made on capacitors and transistors with various nitrogen densities at the SiO2/SiC interface. While NO annealing leads to a progressively lower interface state density and higher inversion mobility, consistent with Coulomb-limited transport, MOSFET properties are still limited by the relatively poor interface quality. Moreover, NO induces a large amount of hole traps in the oxide. We establish that these properties are not related to the oxidation rate and we discuss them in terms of the nitrogen content.

AB - We report on the benefits and the shortcomings of the NO annealing process following observations made on capacitors and transistors with various nitrogen densities at the SiO2/SiC interface. While NO annealing leads to a progressively lower interface state density and higher inversion mobility, consistent with Coulomb-limited transport, MOSFET properties are still limited by the relatively poor interface quality. Moreover, NO induces a large amount of hole traps in the oxide. We establish that these properties are not related to the oxidation rate and we discuss them in terms of the nitrogen content.

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KW - Interface states

KW - Mobility

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KW - Oxidation

KW - Reliability

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