The morphology of As terminated Si(111) from desorption kinetics

M. Zinke-Allmang, Leonard C Feldman, J. R. Patel, J. C. Tully

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Isothermal desorption measurements of film/substrate systems yield rate parameters characteristic of the thermodynamical driving forces which determine the film morphology. We show from the activation energy for desorption for As on Si(111) that it is energetically favourable to form a uniform layer rather than clustering (for coverages up to ≈ 1 monolayer). This is supported by the fact that the desorption process follows a second-order kinetic law. The pre-exponential factor for desorption is consistent with a restricted surface mobility of the adatoms. These results bear on issues associated with the growth of GaAs on Si.

Original languageEnglish
Pages (from-to)1-10
Number of pages10
JournalSurface Science
Volume197
Issue number1-2
DOIs
Publication statusPublished - 1988

Fingerprint

Desorption
desorption
Kinetics
kinetics
Adatoms
bears
adatoms
Monolayers
Activation energy
activation energy
Substrates

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

The morphology of As terminated Si(111) from desorption kinetics. / Zinke-Allmang, M.; Feldman, Leonard C; Patel, J. R.; Tully, J. C.

In: Surface Science, Vol. 197, No. 1-2, 1988, p. 1-10.

Research output: Contribution to journalArticle

Zinke-Allmang, M. ; Feldman, Leonard C ; Patel, J. R. ; Tully, J. C. / The morphology of As terminated Si(111) from desorption kinetics. In: Surface Science. 1988 ; Vol. 197, No. 1-2. pp. 1-10.
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